초록 ▼

A dust removing apparatus equipped with a back washing mechanism and a dust removing method for removing solid silica fine powder contained in a gas discharged from a semiconductor producing step of a single-wafer processing atmospheric pressure CVD apparatus without causing problems caused by the i

A dust removing apparatus equipped with a back washing mechanism and a dust removing method for removing solid silica fine powder contained in a gas discharged from a semiconductor producing step of a single-wafer processing atmospheric pressure CVD apparatus without causing problems caused by the increase of a pressure loss and by a pressure fluctuation, wherein filter elements each having a ratio of a surface area of a primary side of a filter membrane to an apparent external surface area of the filter element of from 1 to 5 is used, gas jetting nozzle(s) for back washing is formed in the secondary side of the filter element, back washing is not carried out during filtration in the filter element and at or after changing the processing of a wafer in the CVD apparatus, back washing is carried out to blow down the silica fine powder accumulated on the primary side of the filter membrane.

대표청구항 ▼

[ What is claimed is:] [1.] A dust removing method for removing fine powder contained in an exhaust gas discharged from a semiconductor production step using a single wafer processing atmospheric pressure CVD apparatus, which comprises continuously carrying out a filtration using filters each equipp

[ What is claimed is:] [1.] A dust removing method for removing fine powder contained in an exhaust gas discharged from a semiconductor production step using a single wafer processing atmospheric pressure CVD apparatus, which comprises continuously carrying out a filtration using filters each equipped with a filter element wherein a ratio (S.sub.2 /S.sub.1) of a surface area (S.sub.2) at a primary side of a filter membrane to an apparent external surface area (S.sub.1) of said filter element is from 1 to 5, and said filters are also each equipped with a pulse jet mechanism for a gas for back washing disposed in an air chamber at a secondary side of said filter element, without carrying out back washing until processing of a wafer fed in the CVD apparatus is completed, and carrying out back washing after completion of the processing of the wafer, wherein a jetting amount of the gas for said back washing is such that a value of a volume of gas per one pulse divided by a jetting time and an area of the filter membrane at a portion to be jetted is from 0.03 to 0.3 m.sup.3 /m.sup.2 .multidot.sec.