초록 ▼

An ion implantation system is described having an ion source coupled to a process chamber, and a workpiece handling assembly having a workpiece support that is mounted within the process chamber. The system implants ions into a photoresist coated workpiece to change the conductivity of the workpiece

An ion implantation system is described having an ion source coupled to a process chamber, and a workpiece handling assembly having a workpiece support that is mounted within the process chamber. The system implants ions into a photoresist coated workpiece to change the conductivity of the workpiece. An ion beam shield is provided that is positioned between the ion source and the workpiece support during processing to prevent outgassed photoresist from coating portions of the ion source.

대표청구항 ▼

[ Having described the invention, what is claimed as new and desired to be secured by letters patent is:] [1.] An ion implantation system for processing a workpiece with a coated surface, comprisingan ion source for ionizing selected matter to generate a ribbon-shaped ion beam,a housing defining a p

[ Having described the invention, what is claimed as new and desired to be secured by letters patent is:] [1.] An ion implantation system for processing a workpiece with a coated surface, comprisingan ion source for ionizing selected matter to generate a ribbon-shaped ion beam,a housing defining a process chamber that is fluidly coupled to the ion source,a workpiece handling assembly mounted within the process chamber and having a workpiece support surface for supporting the workpiece within the process chamber during implantation by the ion beam, andan ion beam shield having an aperture sized for allowing the ion beam to pass therethrough, wherein the aperture is sized to accommodate said ribbon beam having an aspect ratio equal to or greater than fifty to one, the ion beam shield being positioned between the support surface of the handling assembly and the ion source during processing for shielding the ion source from residue that is outgassed from the coated surface of the workpiece during implantation.