초록 ▼

A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the

A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising:a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 .ANG.,wherein one or more elements selected from the group consisting of Grou

[ What is claimed is:] [1.] A semiconductor device comprising:a crystalline semiconductor film formed on an insulating surface and annealed in a hydrogen atmosphere, said semiconductor film having a thickness of 300 to 800 .ANG.,wherein one or more elements selected from the group consisting of Group VIII, IIIb. IVb and Vb elements are used in the semiconductor film for the crystallization of the semiconductor film to have an X-ray diffraction pattern of which the orientation ratio at the (111) plane is 0.67 or higher.