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Plasma generating apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0714998 (1996-09-17)
우선권정보 JP-0238843 (1995-09-18)
발명자 / 주소
  • Tomioka Kazuhiro,JPX
  • Sekine Makoto,JPX
출원인 / 주소
  • Kabushiki Kaisha Toshiba, JPX
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 63  인용 특허 : 4

초록

The synthesized wave electric field is utilized for controlling progress of dissociation of the process gas in the plasma.

대표청구항

[ What is claimed is:] [1.] A plasma generating apparatus comprising:a container defining a hermetic process room;an exhaust means for exhausting an interior of the process room and setting the interior of said process room to a vacuum;a supply for supplying a process gas into said process room;firs

이 특허에 인용된 특허 (4)

  1. Patrick Roger (Santa Clara CA) Bose Frank (Wettingen CA CHX) Schoenborn Philippe (San Jose CA) Toda Harry (Santa Clara CA), Coil configurations for improved uniformity in inductively coupled plasma systems.
  2. Gesche Roland (Seligenstadt DEX) Kretschmer Karl-Heinz (Langen DEX), Device for the generation of a plasma.
  3. Miyamoto Masahiro (Kanagawa JPX) Yamada Mamoru (Kanagawa JPX) Sakuta Tadahiro (Ishikawa JPX), Method and apparatus for generating induced plasma.
  4. Imahashi Issei (Yamanashi-ken JPX), Plasma processing apparatus with a rotating electromagnetic field.

이 특허를 인용한 특허 (63)

  1. Johnson, Wayne L., Active control of electron temperature in an electrostatically shielded radio frequency plasma source.
  2. Howald, Arthur M.; Kuthi, Andras, Antenna for plasma processor and apparatus.
  3. Howald, Arthur M.; Kuthi, Andras, Antenna for plasma processor and apparatus.
  4. Jozef Brcka, Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma.
  5. Ameen Michael S. ; Hillman Joseph T., Apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof.
  6. Khaja, Abdul Aziz; Ayoub, Mohamad A.; Bokka, Ramesh; Pinson, II, Jay D.; Rocha-Alvarez, Juan Carlos, Auto frequency tuned remote plasma source.
  7. Helmus,Michael N.; Cunanan,Crystal M.; Tremble,Patrice, Delivery systems for periadventitial delivery for treatment of restenosis and anastomotic intimal hyperplasia.
  8. Hideki Harano JP, Dry etching device and dry etching method.
  9. Johnson,Wayne L.; Windhorn,Thomas H.; Strang,Eric J., Electrically controlled plasma uniformity in a high density plasma source.
  10. Tonotani Junichi,JPX ; Suzuki Keiji,JPX, High frequency discharging method and apparatus, and high frequency processing apparatus.
  11. Tonotani Junichi,JPX ; Suzuki Keiji,JPX, High frequency discharging method and apparatus, and high frequency processing apparatus.
  12. Thomas, George; Wongsenakhum, Panya; Juarez, Francisco J., Hybrid impedance matching for inductively coupled plasma system.
  13. Kwon, Gi-Chung; Byun, Hong-Sik; Lee, Sung-Weon; Kim, Hong-Seub; Han, Sun-Seok; Ko, Bu-Jin; Kim, Joung-Sik, Impedance matching circuit for inductively coupled plasma source.
  14. Walther, Steven R.; Mehta, Sandeep; Variam, Naushad; Jeong, Ukyo, In situ surface contamination removal for ion implanting.
  15. Chen,Jian J.; Veltrop,Robert G.; Wicker,Thomas E., Inductive plasma processor having coil with plural windings and method of controlling plasma density.
  16. Song, Qiaoli; Nan, Jianhui, Inductively coupled coil and inductively coupled plasma device using the same.
  17. Song, Qiaoli; Nan, Jianhui, Inductively coupled coil and inductively coupled plasma device using the same.
  18. Nguyen, Andrew; Collins, Kenneth S.; Ramaswamy, Kartik; Rauf, Shahid; Carducci, James D.; Buchberger, Jr., Douglas A.; Agarwal, Ankur; Kenney, Jason A.; Dorf, Leonid; Balakrishna, Ajit; Fovell, Richard, Inductively coupled plasma source with multiple dielectric windows and window-supporting structure.
  19. Kenney, Jason A.; Carducci, James D.; Collins, Kenneth S.; Fovell, Richard; Ramaswamy, Kartik; Rauf, Shahid, Inductively coupled plasma source with symmetrical RF feed.
  20. Nguyen, Andrew; Collins, Kenneth S.; Ramaswamy, Kartik; Rauf, Shahid; Carducci, James D.; Buchberger, Jr., Douglas A.; Agarwal, Ankur; Kenney, Jason A.; Dorf, Leonid; Balakrishna, Ajit; Fovell, Richard, Inductively coupled plasma source with top coil over a ceiling and an independent side coil and independent air flow.
  21. Hanawa,Hiroji; Ramaswamy,Kartik; Collins,Kenneth S.; Al Bayati,Amir; Gallo,Biagio; Nguyen,Andrew, Low temperature CVD process with selected stress of the CVD layer on CMOS devices.
  22. Yang, Daewon; Cheng, Kangguo; Smetana, Pavel; Wise, Richard S.; Wong, Keith Kwong Hon, Method and apparatus for angular high density plasma chemical vapor deposition.
  23. Yang, Daewon; Cheng, Kangguo; Smetana, Pavel; Wise, Richard S.; Wong, Keith Kwong Hon, Method and apparatus for angular high density plasma chemical vapor deposition.
  24. Cabeo, Emilio Rodriguez; Laudien, Günter; Rie, Kyong-Tschong; Biemer, Swen, Method and arrangement for plasma boronizing.
  25. Udayakumar,Kezhakkedath R.; Moise,Ted S.; Summerfelt,Scott R.; Albrecht,Martin G.; Dostalik, Jr.,William W.; Celii,Francis G., Method for etching a substrate and a device formed using the method.
  26. Miller, Paul A.; Aragon, Ben P., Method for generating surface plasma.
  27. Al Bayati,Amir; Roberts,Rick J.; Collins,Kenneth S.; MacWilliams,Ken; Hanawa,Hiroji; Ramaswamy,Kartik; Gallo,Biagio; Nguyen,Andrew, Method for ion implanting insulator material to reduce dielectric constant.
  28. Suzuki, Koji, Methods and apparatus for producing semiconductor devices.
  29. Kenney, Jason A.; Carducci, James D.; Collins, Kenneth S.; Fovell, Richard; Ramaswamy, Kartik; Rauf, Shahid, Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding.
  30. Dhindsa,Raj; Sadjadi,S. M. Reza; Kozakevich,Felix; Trussell,Dave; Li,Lumin; Lenz,Eric; Rusu,Camelia; Srinivasan,Mukund; Eppler,Aaron; Tietz,Jim; Marks,Jeffrey, Multiple frequency plasma processor method and apparatus.
  31. Arthur M. Howald ; Brian McMillin ; Frank Yun Lin, Plasma excitation coil.
  32. Howald, Arthur M.; McMillin, Brian; Lin, Frank Yun, Plasma excitation coil.
  33. Bing-Hung Chen TW; Tse-Yao Huang TW, Plasma generator.
  34. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio; Monroy,Gonzalo Antonio, Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage.
  35. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio, Plasma immersion ion implantation process.
  36. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio, Plasma immersion ion implantation process.
  37. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio, Plasma immersion ion implantation process.
  38. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio; Monroy,Gonzalo Antonio, Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage.
  39. Collins, Kenneth S.; Hanawa, Hiroji; Ramaswamy, Kartik; Nguyen, Andrew; Al-Bayati, Amir; Gallo, Biagio; Monroy, Gonzalo Antonio, Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage.
  40. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio; Monroy,Gonzalo Antonio, Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage.
  41. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio; Monroy,Gonzalo Antonio, Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage.
  42. Strang, Eric J.; Moroz, Paul, Plasma processing apparatus and method of controlling chemistry.
  43. Murayama, Takahide; Morikawa, Yasuhiro; Sakuishi, Toshiyuki, Plasma processing device.
  44. Holland John Patrick, Plasma processor with coil responsive to variable amplitude rf envelope.
  45. Dhindsa,Raj; Kozakevich,Felix; Trussell,David Douglas, Plasma processor with electrode responsive to multiple RF frequencies.
  46. Rozenzon, Yan; Tantiwong, Kyle; Yousif, Imad; Knyazik, Vladimir; Keating, Bojenna; Banna, Samer, Plasma reactor with highly symmetrical four-fold gas injection.
  47. Ye Yan ; D'Ambra Allan ; Mok Yeuk-Fai Edwin ; Remmington Richard E. ; Sammons ; III James E., Plasma reactor with multiple small internal inductive antennas.
  48. Woo, Sang Ho; Yang, Il Kwang; Song, Byung Gyu, Plasma treatment apparatus and plasma antenna.
  49. Brcka Jozef, Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma.
  50. Jozef Brcka, Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element.
  51. Ye Yan ; Olgado Donald ; Tepman Avi ; Ma Diana ; Yin Gerald ; Loewenhardt Peter ; Hwang Jeng H. ; Mak Steve, RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls.
  52. Ye Yan ; Olgado Donald ; Tepman Avi ; Ma Diana ; Yin Gerald Zheyao ; Loewenhardt Peter ; Hwang Jeng ; Mak Steve S. Y., RF plasma method.
  53. Ono,Tetsuo; Tokunaga,Takafumi; Umezawa,Tadashi; Yoshigai,Motohiko; Mizutani,Tatsumi; Kure,Tokuo; Kojima,Masayuki; Sato,Takashi; Goto,Yasushi, Sample surface processing method.
  54. Al Bayati,Amir; Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Gallo,Biagio; Nguyen,Andrew, Semiconductor on insulator vertical transistor fabrication and doping process.
  55. Al-Bayati, Amir; Collins, Kenneth S.; Hanawa, Hiroji; Ramaswamy, Kartik; Gallo, Biagio; Nguyen, Andrew, Semiconductor on insulator vertical transistor fabrication and doping process.
  56. Al Bayati,Amir; Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Gallo,Biagio; Nguyen,Andrew, Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement.
  57. Yializis Angelo ; Ellwanger Richard E. ; Mikhael Michael G. ; Decker Wolfgang ; Johnson C. Barry ; Shipley Gale ; O'Brien Timothy D., Structures and components thereof having a desired surface characteristic together with methods and apparatuses for producing the same.
  58. Yializis Angelo ; Ellwanger Richard E. ; Mikhael Michael G. ; Decker Wolfgang ; Johnson C. Barry ; Shipley Gale ; O'Brien Timothy D., Structures and components thereof having a desired surface characteristic together with methods and apparatuses for producing the same.
  59. Kenney, Jason A.; Carducci, James D.; Collins, Kenneth S.; Fovell, Richard; Ramaswamy, Kartik; Rauf, Shahid, Symmetrical inductively coupled plasma source with coaxial RF feed and coaxial shielding.
  60. Nguyen, Andrew; Ramaswamy, Kartik; Kenney, Jason A.; Rauf, Shahid; Collins, Kenneth S.; Yang, Yang; Lane, Steven; Vishwanath, Yogananda Sarode, Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna.
  61. Nguyen, Andrew; Collins, Kenneth S.; Ramaswamy, Kartik; Rauf, Shahid; Carducci, James D.; Buchberger, Jr., Douglas A.; Agarwal, Ankur; Kenney, Jason A.; Dorf, Leonid; Balakrishna, Ajit; Fovell, Richard, Symmetrical inductively coupled plasma source with symmetrical flow chamber.
  62. Carducci, James D.; Collins, Kenneth S.; Fovell, Richard; Kenney, Jason A.; Ramaswamy, Kartik; Rauf, Shahid, Symmetrical plural-coil plasma source with side RF feeds and RF distribution plates.
  63. Hanawa,Hiroji; Ramaswamy,Kartik; Collins,Kenneth S.; Al Bayati,Amir; Gallo,Biagio; Nguyen,Andrew, Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer.
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