초록 ▼

The present invention relates generally to a new structure and method for capped copper electrical interconnects. More particularly, the invention encompasses a novel structure in which one or more of the copper electrical interconnects within a semiconductor substrate are capped to obtain a robust

The present invention relates generally to a new structure and method for capped copper electrical interconnects. More particularly, the invention encompasses a novel structure in which one or more of the copper electrical interconnects within a semiconductor substrate are capped to obtain a robust electrical interconnect structure. A method for obtaining such capped copper electrical interconnect structure is also disclosed. These capped interconnects can be a single layer or multi-layer structures. Similarly, the interconnect structure that is being capped can itself be composed of single or multi-layered material.

대표청구항 ▼

[ What is claimed is:] [1.] A capped electrical interconnect structure comprising a substrate, having at least one first seed layer, at least one second seed layer over said at least one first seed layer, a copper material on a portion of said at least one second seed layer and at least one capping

[ What is claimed is:] [1.] A capped electrical interconnect structure comprising a substrate, having at least one first seed layer, at least one second seed layer over said at least one first seed layer, a copper material on a portion of said at least one second seed layer and at least one capping material which completely envelopes said copper material, wherein a peripheral edge portion of said at least one capping material makes direct electrical contact with a portion of the upper surface of said at least one second seed layer and wherein the side walls of said at least one first seed layer and said at least one second seed layer do not have any capping material, and wherein material for said at least one first seed layer is different than material for said at least one second seed layer, and wherein said first seed layer is in direct contact with said substrate.