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High-temperature high-pressure gas processing apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • F27D-007/06
출원번호 US-0845822 (1997-04-28)
우선권정보 JP-0107781 (1996-04-26)
발명자 / 주소
  • Fujikawa Takao,JPX
  • Ishii Takahiko,JPX
  • Nakai Tomomitsu,JPX
  • Sakashita Yoshihiko,JPX
출원인 / 주소
  • Nihon Shinku Gijutsu Kabushiki Kaisha, JPX
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 35  인용 특허 : 1

초록

The present invention provides a processing apparatus for eliminating pores in via holes of a silicon semiconductor. The apparatus includes a high-pressure vessel divided into at least two vessel component members in the axial direction thereof, at least one of which has a cooling unit, a frame for

대표청구항

[ What is claimed is:] [1.] A high-temperature high-pressure gas processing apparatus for processing a workpiece to be processed by heating in a high-pressure gas atmosphere in a high-pressure vessel having a heater, comprising:the high-pressure vessel divided into at least two vessel component memb

이 특허에 인용된 특허 (1)

  1. Jeffryes Andrew I. (Avon GBX) Green Gordon R. (Avon GBX), Method and apparatus for subjecting a workpiece to elevated pressure.

이 특허를 인용한 특허 (35)

  1. Yokomizo,Kenji, Apparatus and method of securing a workpiece during high-pressure processing.
  2. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.
  3. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.
  4. Kroeker,Tony R., Cluster tool process chamber having integrated high pressure and vacuum chambers.
  5. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
  6. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.
  7. Sutton, Thomas R.; Biberger, Maximilan A., High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism.
  8. Jones, William D., High pressure fourier transform infrared cell.
  9. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.
  10. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
  11. Watanabe, Katsumi; Ishii, Takahiko; Sarumaru, Shogo; Yamane, Hideshi, High-pressure processing apparatus.
  12. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  13. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  14. Shinohara,Shinji; Tsuda,Takuma; Hayashida,Takeshi, Hydrostatic gas bearing, hydrostatic gas bearing device for use in vacuum environment, and gas recovering method for hydrostatic gas bearing device.
  15. Shinohara,Shinji; Tsuda,Takuma; Hayashida,Takeshi, Hydrostatic gas bearing, hydrostatic gas bearing device for use in vacuum environment, and gas recovering method for the hydrostatic gas bearing device.
  16. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.
  17. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.
  18. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.
  19. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.
  20. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.
  21. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.
  22. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
  23. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
  24. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
  25. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
  26. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
  27. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
  28. Wuester,Christopher D., Process flow thermocouple.
  29. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  30. Yamamoto, Masayuki; Hase, Yukitoshi, Semiconductor wafer transport method and semiconductor wafer transport apparatus.
  31. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
  32. Cho, Hyun Je; Kim, Cheon Woo; Kim, Young Il; Lee, Sang Woo; Park, Seung Chul; Park, Jong Gil; Hwang, Tae Won, Tapping device and method using induction heat for melt.
  33. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
  34. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
  35. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
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