초록 ▼

A field effect transistor comprising source and drain regions, a channel region composed of a semiconductor layer formed between the source and drain regions and gate electrodes disposed to at least three surfaces surrounding the channel region. The structure can increase the number of carriers indu

A field effect transistor comprising source and drain regions, a channel region composed of a semiconductor layer formed between the source and drain regions and gate electrodes disposed to at least three surfaces surrounding the channel region. The structure can increase the number of carriers induced in the channel region and enhance the current driving performance and mutual conductance as compared with the single gate structure or double gate structure.

대표청구항 ▼

[ What is claimed is:] [1.] A method of forming a field effect transistor, comprising the steps of:fabricating a protrusion on a semiconductor substrate;forming a thin insulation film on the semiconductor substrate having the protrusion formed thereon;forming a film of an electrode material on said

[ What is claimed is:] [1.] A method of forming a field effect transistor, comprising the steps of:fabricating a protrusion on a semiconductor substrate;forming a thin insulation film on the semiconductor substrate having the protrusion formed thereon;forming a film of an electrode material on said thin insulation film and then forming a gate electrode pattern to at least three surfaces on the side walls of said protrusion by etching;forming source and drain regions on both ends of said protrusion;forming an oxide film on said protrusion and said gate electrode and then planarizing said oxide film;appending another substrate to said planarized oxide film;removing said semiconductor substrate, thereby exposing said thin insulation film and a surface of the protrusion; andfurther forming an oxide film and a gate electrode on the surface of the protrusion.