초록 ▼

Disclosed is a method of growing hemispherical grained silicon (HSG silicon) over a conductive seed layer. In a preferred embodiment, a contact window is etched in an insulating layer to expose a circuit node, such as an active area of a substrate or a contact plug leading to an active area. A layer

Disclosed is a method of growing hemispherical grained silicon (HSG silicon) over a conductive seed layer. In a preferred embodiment, a contact window is etched in an insulating layer to expose a circuit node, such as an active area of a substrate or a contact plug leading to an active area. A layer of titanium nitride is deposited over the insulating layer and into the contact window. The titanium nitride (TiN) serves as the seed layer for HSG silicon growth to follow. Polysilicon is deposited and grows around nucleation sites on the TiN surface. The TiN provides both electrical and mechanical support for the HSG silicon. Additionally, as TiN is an effective diffusion barrier, the HSG silicon may be heavily doped without undue risk of dopant diffusion to the active area.

대표청구항 ▼

[ I claim:] [1.] A method of forming a plate of a capacitor in an integrated circuit, the method comprising the steps of:etching a contact window through an insulating layer of the integrated circuit;depositing a metal nitride layer over the insulating layer and into the contact window, the metal ni

[ I claim:] [1.] A method of forming a plate of a capacitor in an integrated circuit, the method comprising the steps of:etching a contact window through an insulating layer of the integrated circuit;depositing a metal nitride layer over the insulating layer and into the contact window, the metal nitride layer electrically contacting an active area of an underlying substrate; andgrowing a hemispherical grained silicon layer directly on the metal nitride layer.