초록 ▼

A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film

A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

대표청구항 ▼

[ What is claimed is:] [1.] A method for making a semiconductor integrated circuit device, which comprises the steps of:(a) forming a first insulating film on a semiconductor substrate, the first insulating film having a plurality of first through-holes;(b) forming a tungsten film over said first in

[ What is claimed is:] [1.] A method for making a semiconductor integrated circuit device, which comprises the steps of:(a) forming a first insulating film on a semiconductor substrate, the first insulating film having a plurality of first through-holes;(b) forming a tungsten film over said first insulating film and in the first through-holes in such a thickness that the first through-holes are filled with said tungsten film;(c) etching said tungsten film to remove the tungsten film overlying said first insulating film, while selectively leaving said tungsten film in the first through-holes;(d) forming a first aluminum film overlying said first insulating film and the tungsten film in the first through-holes; and(e) forming a second aluminum film on the first aluminum film, wherein the first aluminum film is formed with the substrate at a first temperature, the first aluminum film being formed at a first deposition rate, and the second aluminum film is formed at a second deposition rate smaller than the first deposition rate and with the substrate at a second temperature higher than the first temperature.