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Plating cell with rotary wiper and megasonic transducer 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25D-017/00
  • C25D-001/00
출원번호 US-0954239 (1997-10-20)
발명자 / 주소
  • Reynolds H. Vincent
출원인 / 주소
  • Reynolds Tech Fabricators, Inc.
대리인 / 주소
    Trapani & Molldrem
인용정보 피인용 횟수 : 194  인용 특허 : 11

초록

A plating cell for plating a flat substrate employs a sparger to introduce a flow of electrolyte or other plating solution across the surface of the substrate to be plated. A fluid-powered rotary blade or wiper within the cathode chamber has a rotary blade with an edge spaced a small distance, prefe

대표청구항

[ What is claimed is:] [5.] A process of plating a planar face of a substrate with a metal layer in an electroplating cell wherein a cathode chamber of a plating bath contains an electrolyte in which the planar face of said substrate is immersed, said substrate being held in a plating position in sa

이 특허에 인용된 특허 (11)

  1. Becker Joahann (Langenhagen DEX) Koop Hermann (Gehrden DEX) Scheddekopf Hans (Hanover DEX), Anode case for a galvanic bath.
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  9. Brinket Oscar J. (3816 Montego Dr. Huntington Beach CA 92649) Brinket Brian C. (3816 Montego Dr. Huntington Beach CA 92649), Substrate plating device having laminar flow.
  10. Pellegrino Peter P. (216 Edgewood La. Apple Valley MN 55124) Pellegrino Damian (17029 Harbor Bluff Cir. Huntington Beach CA 92649), Turbulent cell electroplating method and apparatus.
  11. Al-Jiboory Muhammed M. (Vancouver CAX) Timewell Richard R. (Vancouver CAX), Ultrasonic agitator.

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  149. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  150. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  151. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  152. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  153. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  154. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  155. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  156. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  157. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
  158. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  159. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
  160. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and nitrogen.
  161. Wang, Yunyu; Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective suppression of dry-etch rate of materials containing both silicon and oxygen.
  162. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  163. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  164. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
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  166. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
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  168. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
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  171. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
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  174. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
  175. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.
  176. Korolik, Mikhail; Ingle, Nitin K.; Wang, Anchuan; Xu, Jingjing, Silicon germanium processing.
  177. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.
  178. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  179. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  180. Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.
  181. Lopatin,Sergey D.; Shanmugasundrum,Arulkumar; Shacham Diamand,Yosef, Silver under-layers for electroless cobalt alloys.
  182. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
  183. Luere, Olivier; Kang, Sean S.; Nemani, Srinivas D., Spacer formation.
  184. Wilson, Gregory J.; McHugh, Paul R.; Hanson, Kyle M., System for electrochemically processing a workpiece.
  185. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.
  186. Wang, Xikun; Pandit, Mandar; Wang, Anchuan; Ingle, Nitin K., Titanium nitride removal.
  187. Wang, Xikun; Xu, Lin; Wang, Anchuan; Ingle, Nitin K., Titanium oxide etch.
  188. Liu, Jie; Wang, Xikun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Tungsten oxide processing.
  189. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
  190. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  191. Wilson,Gregory J.; McHugh,Paul R.; Weaver,Robert A.; Ritzdorf,Thomas L., Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece.
  192. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.
  193. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
  194. Wilson,Gregory J.; McHugh,Paul R.; Hanson,Kyle M., Workpiece processor having processing chamber with improved processing fluid flow.
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