초록 ▼

An inductively coupled plasma reactor for processing a substrate has an inductively coupled coil antenna including plural inductive antenna loops which are electrically separated from one another and independently connected to separately controllable plasma source RF power supplies. The RF power lev

An inductively coupled plasma reactor for processing a substrate has an inductively coupled coil antenna including plural inductive antenna loops which are electrically separated from one another and independently connected to separately controllable plasma source RF power supplies. The RF power level in each independent antenna loop is separately programmed and instantly changeable to provide a perfectly uniform plasma ion density distribution across the entire substrate surface under a large range of plasma processing conditions, such as different process gases or gas mixtures. In a preferred embodiment, there are as many separately controllable RF power supplies as there are independent antenna loops, and all the separately controllable power supplies receive their RF power from a commonly shared RF generator.

대표청구항 ▼

[ What is claimed is:] [1.] An inductively coupled plasma reactor for processing a substrate in a reactor chamber containing a process gas, comprising:a wafer pedestal;an inductively coupled coil antenna, said coil antenna comprising plural inductive antenna loops adjacent different portions of said

[ What is claimed is:] [1.] An inductively coupled plasma reactor for processing a substrate in a reactor chamber containing a process gas, comprising:a wafer pedestal;an inductively coupled coil antenna, said coil antenna comprising plural inductive antenna loops adjacent different portions of said chamber and which are electrically separate from one another;said plural inductive antenna loops comprising respective conductors wound around respective loop axes, all of said respective loop axes being substantially aligned with an axis of symmetry of said wafer pedestal;plural RF power level adjusting circuits each connected to a respective one of the antenna loops and connected to receive respective RF power signals, each of the RF power level adjusting circuits being capable of changing and setting a RF power level of the RF power signal;an RF power distribution controller connected to each of the RF power level adjusting circuits, said controller being capable of simultaneously controlling each of the RF power level adjusting circuits to individually govern the RF power level of each of the RF power signals to provide a uniform plasma ion density distribution across the top surface of the substrate;a transformer; andan RF impedance match network coupled to at least one of said plural inductive antenna loops through said transformer.