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Difunctional amino precursors for the deposition of films comprising metals 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C07F-009/00
  • C07F-007/00
  • C07F-011/00
출원번호 US-0915755 (1997-08-21)
발명자 / 주소
  • Vaartstra Brian A.
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Schwegman, Lundberg, Woessner & Kluth, P.A.
인용정보 피인용 횟수 : 76  인용 특허 : 30

초록

wherein L is an auxiliary ligand; x is 0-6; M is a metal of valence 1 to 5; n is the oxidation state of the metal; R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are hydrogen or (C.sub.1 -C.sub.12) alkyl groups; y is 1-5, z is 1-n.

대표청구항 ▼

[ What is claimed is:] [1.] A compound of formula (I) EQU (L).sub.x M.sup.n+ (N(R.sup.1)(C(R.sup.2 R.sup.3)).sub.y N(R.sup.4 R.sup.5)).sub.z (I) rein(a) L is an auxiliary ligand;(b) x is 0-6;(c) M is a low-valent metal;(d) n is the oxidation state of the metal;(e) each of R.sup.1, R.sup.2, R.sup.3,

이 특허에 인용된 특허 (30)

  1. Eichman Eric C. (Phoenix AZ) Sommer Bruce A. (Phoenix AZ) Churley Michael J. (Tempe AZ) Ramsey W. Chuck (Tempe AZ), Apparatus for elimination of low temperature ammonia salts in TiCl4 NH3 CVD reaction.
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  2. McCormick Fred B. (Maplewood MN) Gladfelter Wayne L. (St. Paul MN) Senzaki Yoshihide (Minneapolis MN), Chemical vapor deposition of iron, ruthenium, and osmium.
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  3. Doan Trung T. (Boise ID) Sandhu Gurtej S. (Boise ID), Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers.
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  4. Doan Trung T. (Boise ID) Sandhu Gurtej S. (Boise ID), Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers.
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  5. Tuttle Mark E. (Boise ID), Electroplating process for enhancing the conformality of titanium and titanium nitride films in the manufacture of integ.
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  6. Vaartstra Brian A. (Nampa ID), Five- and six-coordinate precursors for titanium nitride deposition.
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  7. Westmoreland Donald L. (Boise ID) Sandhu Gurtej S. (Boise ID), High efficiency method for performing a chemical vapor deposition utilizing a nonvolatile precursor.
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  8. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID), LPCVD process for depositing titanium films for semiconductor devices.
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  9. Sandhu Gurtej S. (Boise ID), LPCVD process for depositing titanium nitride (tin) films and silicon substrates produced thereby.
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  10. Grundy Barry T. (Wigan GB2) Hargreaves Edward (Merseyside GB2) Whitfield Peter J. (Merseyside GB2), Method and apparatus for coating glass.
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  11. Deutsch Thomas F. (Cambridge MA) Ehrlich Daniel J. (Arlington MA) Osgood Richard M. (Winchester MA), Method and apparatus for depositing a material on a surface.
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  12. Ehrlich Daniel J. (Lexington MA) Rothschild Mordecai (Newton MA), Method and apparatus for photodeposition of films on surfaces.
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  13. Sandhu Gurtej S. (Boise ID) Meikle Scott G. (Boise ID) Westmoreland Donald L. (Boise ID), Method and appartus for subliming precursors.
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  14. Foster Robert F. (5002-3 E. Siesta Dr. Phoenix AZ 85044) Hillman Joseph T. (8025 E. McClellan Blvd. Scottsdale AZ 07410), Method for chemical vapor deposition of titanium nitride films at low temperatures.
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  15. Shapiro Michael (Beacon NY) Kanjolia Ravi (Andover MA) Hui Ben C. (Peabody MA) Seidler Paul F. (Ridgefield CT) Holloway Karen (Poughkeepsie NY) Conti Richard (Mount Kisco NY) Chapple-Sokol Jonathan (, Method for depositing a titanium or tantalum nitride or nitride silicide.
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  16. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID), Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and o.
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  17. Verkade John G. (Ames IA), Method of applying single-source molecular organic chemical vapor deposition agents.
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  18. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID) Meikle Scott G. (Boise ID), Method of depositing high density titanium nitride films on semiconductor wafers.
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  19. Umemura Shizuo (Ibaraki JPX), Method of forming ultrafine patterns.
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  20. Endo Yoshihiro (Nara JPX) Yamashita Takuo (Tenri JPX) Ogawa Ikuo (Yamatokoriyama JPX), Method of manufacturing thin-film electroluminescent display panel.
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  21. Gordon Roy G. (Cambridge MA) Fix Renaud (Somerville MA) Hoffman David (Concord MA), Process for chemical vapor deposition of transition metal nitrides.
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  22. Nakano Tadashi (Chiba JPX) Ohta Tomohiro (Chiba JPX), Process for depositing titanium nitride film by CVD.
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  23. Kaito Takashi (Tokyo JPX) Adachi Tatsuya (Tokyo JPX), Process for forming metallic patterned film.
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  24. Gladfelter Wayne L. (St. Paul MN) Boyd David C. (Minneapolis MN), Process for the chemical vapor deposition of aluminum.
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  25. Winter Charles H. (Grosse Pointe Park MI) Lewkebandara T. Suren (Farmington MI) Jayaratne Kumudini C. (Detroit MI), Process for the preparation of metal nitride coatings from single source precursors.
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  26. Vaartstra Brian A. (Nampa ID) Lai Wing-Cheong G. (Boise ID), Process for titanium nitride deposition using five-and six-coordinate titanium complexes.
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  27. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID), Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi2.
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  28. Egermeier John C. (Vienna VA) Ellzey Janet (Vienna VA) Walker Delroy (Mt. Rainier MD), Reaction chamber having non-clouded window.
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  29. Yu Chang (Boise ID) Doan Trung T. (Boise ID) Sandhu Gurtej S. (Boise ID), Semiconductor metallization method.
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  30. Sandhu Gurtej S. (Boise ID), Tungsten silicide (WSix) deposition process for semiconductor manufacture.
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  2. Gurtej Sandhu ; Garo J. Derderian, ALD method to improve surface coverage.
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  3. Sandhu, Gurtej; Derderian, Garo J., ALD method to improve surface coverage.
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  4. Vaartstra, Brian A., Aluminum-containing material and atomic layer deposition methods.
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  5. Gealy, Dan; Weimer, Ronald A., Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers.
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  7. Carpenter,Craig M.; Mardian,Allen P.; Dando,Ross S.; Tschepen,Kimberly R.; Derderian,Garo J., Apparatus and method for depositing materials onto microelectronic workpieces.
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  8. Mardian, Allen P.; Rodriguez, Santiago R., Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes.
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  9. Derderian,Garo J., Apparatus and methods for plasma vapor deposition processes.
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  10. Carpenter,Craig M.; Dando,Ross S.; Mardian,Allen P., Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces.
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  11. Derderian, Garo J.; Sandhu, Gurtej S., Apparatus for improved delivery of metastable species.
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  12. Vaartstra,Brian A., Atomic layer deposition methods.
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  27. John H. Givens ; Russell C. Zahorik ; Brenda D. Kraus, Method for improved metal fill by treatment of mobility layers.
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