초록 ▼

A waveguide type semiconductor photodetecting device has a semiconductor substrate, a photodetecting element, and a waveguide optically coupled with the photodetecting element which can avoid occurrence of light loss in the tapered waveguide even when a width of a light inciding side of the tapered

A waveguide type semiconductor photodetecting device has a semiconductor substrate, a photodetecting element, and a waveguide optically coupled with the photodetecting element which can avoid occurrence of light loss in the tapered waveguide even when a width of a light inciding side of the tapered waveguide is widened. The waveguide has a waveguide layer gradually narrowing a width and gradually increasing a layer thickness and a refraction index from light incident side to the photodetecting element. The waveguide is integrated with the photodetecting element on the semiconductor substrate.

대표청구항 ▼

[ What is claimed is:] [1.] A fabrication process of a waveguide type semiconductor photodetecting device having a photodiode portion, a light incident portion, and a waveguide optically coupling the photodiode portion and the light incident portion, the fabrication process comprising the steps of:f

[ What is claimed is:] [1.] A fabrication process of a waveguide type semiconductor photodetecting device having a photodiode portion, a light incident portion, and a waveguide optically coupling the photodiode portion and the light incident portion, the fabrication process comprising the steps of:forming a pair of dielectric masks on a compound semiconductor substrate, said pair of dielectric masks forming a narrow gap therebetween from the light incident portion to the photodiode portion;sequentially growing semiconductor layers comprising a lower clad layer, a core layer and an upper clad layer on said compound substrate by metal organic chemical vapor deposition using said dielectric masks as a growth mask; andremoving said dielectric masks and burying said semiconductor layers with a semiconductor layer.