초록 ▼

A trench which has walls intersecting a surface of a semiconductor substrate and an oxidation/diffusion barrier layer lining the walls is disclosed. The oxidation/diffusion barrier extends over the edges of the trench to prevent, for example, stress defects in the trench corners and vertical bird's

A trench which has walls intersecting a surface of a semiconductor substrate and an oxidation/diffusion barrier layer lining the walls is disclosed. The oxidation/diffusion barrier extends over the edges of the trench to prevent, for example, stress defects in the trench corners and vertical bird's beak formation within the trench. A filler material such as polysilicon is deposited within the trench followed by the deposition of a planarizing layer over the trench. After heat is applied, the planarizing layer flows to form a planarized layer over the trench. Using high pressure and phosphosilicate glass for the planarizing layer, the planarizing layer flows appropriately at low temperatures for short times.

대표청구항 ▼

[ What is claimed is:] [1.] A method of filling an orifice disposed in a wafer and having an orifice opening onto a surface of the wafer, wherein the wafer surface is external to the orifice, the method comprising the steps of:forming an oxygen diffusion barrier within the orifice and over the wafer

[ What is claimed is:] [1.] A method of filling an orifice disposed in a wafer and having an orifice opening onto a surface of the wafer, wherein the wafer surface is external to the orifice, the method comprising the steps of:forming an oxygen diffusion barrier within the orifice and over the wafer surface contiguous to the orifice opening so that a portion of the oxygen diffusion barrier extends from the orifice opening;filling the orifice with a filler material;removing any filler material substantially external to the orifice, wherein the remaining filler material is disposed substantially within the orifice;following the filler material removing step, concurrently removing the oxygen diffusion barrier except for the oxygen diffusion barrier portion over the wafer surface proximate to the orifice opening to substantially prevent subsequent oxidation of a portion of the wafer adjacent to the orifice opening and under the remaining oxygen diffusion barrier portion over the wafer surface, wherein a lateral dimension of the oxygen diffusion portion over the wafer surface proximate to the orifice opening is about 1 .mu.m; andforming a dielectric layer over the filler material and at least over the portion of the oxygen diffusion barrier over the wafer surface.