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Method of removing etching residue 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B08B-003/08
  • C11D-003/30
  • C11D-003/43
출원번호 US-0826257 (1997-03-27)
발명자 / 주소
  • Lee Wai Mun
  • Pittman
  • Jr. Charles U.
  • Small Robert J.
출원인 / 주소
  • EKC Technology, Inc.
대리인 / 주소
    Pennie & Edmonds LLP
인용정보 피인용 횟수 : 57  인용 특허 : 50

초록

A (method using a composition) for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent. The chelating agent is preferred to be includ

대표청구항

[ It is claimed:] [1.] A method of removing etching residue, residual photoresist, and photoresist byproducts from a substrate, the method comprising:contacting a substrate having resist or etching residue present thereon with a composition comprising:(a) from about 5 to about 50 percent by weight o

이 특허에 인용된 특허 (50)

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