초록

A method of growing atomically-flat surfaces and high-quality low-defect crystal films of polytypic compounds heteroepitaxially on polytypic compound substrates that are different than the crystal film. The method is particularly suited for the growth of 3C-SiC, 2H-AlN, and 2H-GaN on 6H-SiC.

대표청구항 ▼

[ What we claim is:] [1.] A method of producing single-crystal atomically-flat surfaces on a single-crystal SiC substrate, said method comprising the steps of:(a) preparing a planar growth surface on said substrates that is parallel to within a predetermined angle relative to a selected crystal plan

[ What we claim is:] [1.] A method of producing single-crystal atomically-flat surfaces on a single-crystal SiC substrate, said method comprising the steps of:(a) preparing a planar growth surface on said substrates that is parallel to within a predetermined angle relative to a selected crystal plane of said substrate;(b) removing material in said substrate so as to define at least one selected separated area having boundaries;(c) treating said substrate so as to remove any sources of unwanted crystal nucleation and remove any unwanted sources of steps;(d) depositing a homoepitaxial film over said at least one selected separated area under selected conditions so as to provide a step-flow growth while suppressing two-dimensional nucleation; and(e) continuing said deposition of said homoepitaxial film until said step-flow growth obtains an atomically-flat epitaxial film surface on each of said at least one separated area where said atomically-flat surface is parallel to said selected crystal plane.