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Electronic components with doped metal oxide dielectric materials and a process for making electronic components with do 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/00
  • H01L-029/227
출원번호 US-0041434 (1998-03-12)
발명자 / 주소
  • Lee Woo-Hyeong
  • Manchanda Lalita
출원인 / 주소
  • Lucent Technologies Inc.
대리인 / 주소
    Botos
인용정보 피인용 횟수 : 339  인용 특허 : 15

초록 ▼

A doped, metal oxide dielectric material and electronic components made with this material are disclosed. The metal oxide is a Group III or Group VB metal oxide (e.g. Al.sub.2 O.sub.3, Y.sub.2 O.sub.3, Ta.sub.2 O.sub.5 or V.sub.2 O.sub.5) and the metal dopant is a Group IV material (Zr, Si, Ti, and

대표청구항 ▼

[ What is claimed is:] [1.] An electronic component comprising a dielectric material, wherein the dielectric material is a metal oxide of a group III metal or group VB metal that is doped with at least one group IV element, wherein the Groups are from groups of the Mendeleef Periodic Table, and wher

이 특허에 인용된 특허 (15)

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  125. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman, Gas delivery apparatus for atomic layer deposition.
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  126. Chen, Ling; Ku, Vincent; Wu, Dien-Yeh; Chung, Hua; Ouye, Alan; Nakashima, Norman; Chang, Mei, Gas delivery apparatus for atomic layer deposition.
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  127. Yudovsky, Joseph, Gas distribution system for cyclical layer deposition.
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  128. Eldridge,Jerome M.; Ahn,Kie Y.; Forbes,Leonard, Graded composition metal oxide tunnel barrier interpoly insulators.
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  129. Eldridge,Jerome M.; Ahn,Kie Y.; Forbes,Leonard, Graded composition metal oxide tunnel barrier interpoly insulators.
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  130. Gealy, Dan; Bhat, Vishwanath; Srividya, Cancheepuram V.; Rocklein, M. Noel, Graded dielectric layers.
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  131. Gealy, Dan; Bhat, Vishwanath; Srividya, Cancheepuram V.; Rocklein, M. Noel, Graded dielectric structures.
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  132. Gealy, F. Daniel; Bhat, Vishwanath; Srividya, Cancheepuram V.; Rocklein, M. Noel, Graded dielectric structures.
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  133. Ahn, Kie Y.; Forbes, Leonard, Hafnium titanium oxide films.
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  134. Ahn, Kie Y.; Forbes, Leonard, Hafnium titanium oxide films.
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  135. Bai, Gang; Fraser, David B.; Doyle, Brian S.; Cheng, Peng; Liang, Chunlin, High dielectric constant metal oxide gate dielectrics.
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  136. Bai, Gang; Fraser, David B.; Doyle, Brian S.; Cheng, Peng; Liang, Chunlin, High dielectric constant metal oxide gate dielectrics.
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  137. Bai,Gang; Fraser,David B.; Doyle,Brian S.; Cheng,Peng; Liang,Chunlin, High dielectric constant metal oxide gate dielectrics.
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  138. Anthony, John Mark; Summerfelt, Scott R.; Wallace, Robert M.; Wilk, Glen D., High permittivity silicate gate dielectric.
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  139. Anthony,John Mark; Summerfelt,Scott R.; Wallace,Robert M.; Wilk,Glen D., High permittivity silicate gate dielectric.
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  140. Ahn, Kie Y.; Forbes, Leonard, High-K gate dielectric oxide.
    상세보기
  141. Chang, Kent Kuohua, High-K tunneling dielectric for read only memory device and fabrication method thereof.
    상세보기
  142. Ahn, Kie Y.; Forbes, Leonard, Highly reliable amorphous high-K gate oxide ZrO2.
    상세보기
  143. Ahn,Kie Y.; Forbes,Leonard, Highly reliable amorphous high-k gate oxide ZrO2.
    상세보기
  144. Forbes,Leonard, In service programmable logic arrays with low tunnel barrier interpoly insulators.
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  145. Huang, Judy H., In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application.
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  146. Ma, Paul F.; Aubuchon, Joseph F.; Chang, Mei; Kim, Steven H.; Wu, Dien-Yeh; Nakashima, Norman M.; Johnson, Mark; Palakodeti, Roja, In-situ chamber treatment and deposition process.
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  147. Shero, Eric J; Pomarede, Christophe, Incorporation of nitrogen into high k dielectric film.
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  148. Forbes,Leonard; Eldridge,Jerome M.; Ahn,Kie Y., Integrated circuit memory device and method.
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  149. Forbes,Leonard; Eldridge,Jerome M.; Ahn,Kie Y., Integrated circuit memory device and method.
    상세보기
  150. Chung,Hua; Maity,Nirmalya; Yu,Jick; Mosely,Roderick Craig; Chang,Mei, Integration of ALD tantalum nitride for copper metallization.
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  151. Chung,Hua; Bekiaris,Nikolaos; Marcadal,Christophe; Chen,Ling, Integration of ALD/CVD barriers with porous low k materials.
    상세보기
  152. Chung, Hua; Chen, Ling; Yu, Jick; Chang, Mei, Integration of barrier layer and seed layer.
    상세보기
  153. Chung,Hua; Chen,Ling; Yu,Jick; Chang,Mei, Integration of barrier layer and seed layer.
    상세보기
  154. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Integration of titanium and titanium nitride layers.
    상세보기
  155. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Integration of titanium and titanium nitride layers.
    상세보기
  156. Nguyen, Khiem K.; Satitpunwaycha, Peter; Mak, Alfred W., Interferometer endpoint monitoring device.
    상세보기
  157. Ahn,Kie Y.; Forbes,Leonard, Lanthanide doped TiOdielectric films.
    상세보기
  158. Ahn,Kie Y.; Forbes,Leonard, Lanthanide doped TiOx dielectric films by plasma oxidation.
    상세보기
  159. Ahn, Kie Y.; Forbes, Leonard, Lanthanum aluminum oxynitride dielectric films.
    상세보기
  160. Ahn,Kie Y.; Forbes,Leonard, Lanthanum aluminum oxynitride dielectric films.
    상세보기
  161. Lin, Yeou-Ming; Hou, Tuo-Hung, Layer of high-k inter-poly dielectric.
    상세보기
  162. Nguyen, Anh N.; Yang, Michael X.; Xi, Ming; Chung, Hua; Chang, Anzhong; Yuan, Xiaoxiong; Lu, Siqing, Lid assembly for a processing system to facilitate sequential deposition techniques.
    상세보기
  163. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.
    상세보기
  164. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.
    상세보기
  165. Eldridge,Jerome M.; Ahn,Kie Y.; Forbes,Leonard, Low tunnel barrier insulators.
    상세보기
  166. Ahn, Kie Y.; Forbes, Leonard, Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics.
    상세보기
  167. Ahn, Kie Y.; Forbes, Leonard, Low-temperature grown high quality ultra-thin CoTiOgate dielectrics.
    상세보기
  168. Yuan,Zheng; Arghavani,Reza; Yieh,Ellie Y; Venkataraman,Shankar, Low-thermal-budget gapfill process.
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  169. Oowaki,Yukihito; Ono,Mizuki; Noguchi,Mitsuhiro; Takashima,Daisaburo; Nishiyama,Akira, MIS transistor and method for producing same.
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  170. Oowaki Yukihito,JPX ; Ono Mizuki,JPX ; Noguchi Mitsuhiro,JPX ; Takashima Daisaburo,JPX ; Nishiyama Akira,JPX, MIS transistor having a large driving current and method for producing the same.
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  171. Oowaki, Yukihito; Ono, Mizuki; Noguchi, Mitsuhiro; Takashima, Daisaburo; Nishiyama, Akira, MIS transistor having a large driving current and method for producing the same.
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  172. Forbes, Leonard, Memory cells having gate structure with multiple gates and multiple materials between the gates.
    상세보기
  173. Forbes, Leonard; Ahn, Kie Y., Memory utilizing oxide nanolaminates.
    상세보기
  174. Forbes, Leonard; Ahn, Kie Y., Memory utilizing oxide nanolaminates.
    상세보기
  175. Forbes,Leonard; Ahn,Kie Y., Memory utilizing oxide nanolaminates.
    상세보기
  176. Forbes,Leonard; Ahn,Kie Y., Memory utilizing oxide nanolaminates.
    상세보기
  177. Forbes, Leonard; Ahn, Kie Y., Memory utilizing oxide-conductor nanolaminates.
    상세보기
  178. Pore, Viljami J.; Haukka, Suvi P.; Blomberg, Tom E.; Tois, Eva E., Metal silicide, metal germanide, methods for making the same.
    상세보기
  179. Pore, Viljami J.; Haukka, Suvi P.; Blomberg, Tom E.; Tois, Eva E., Metal silicide, metal germanide, methods for making the same.
    상세보기
  180. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer.
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  181. Ku, Vincent W.; Chen, Ling; Wu, Dien-Yeh; Ouye, Alan H.; Wysok, Irena, Method and apparatus for gas temperature control in a semiconductor processing system.
    상세보기
  182. Guenther, Rolf A., Method and apparatus for generating gas to a processing chamber.
    상세보기
  183. Ganguli, Seshadri; Ku, Vincent W.; Chung, Hua; Chen, Ling, Method and apparatus for monitoring solid precursor delivery.
    상세보기
  184. Ganguli, Seshadri; Chen, Ling; Ku, Vincent W., Method and apparatus for providing precursor gas to a processing chamber.
    상세보기
  185. Ganguli,Seshadri; Chen,Ling; Ku,Vincent W., Method and apparatus for providing precursor gas to a processing chamber.
    상세보기
  186. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method and system for controlling the presence of fluorine in refractory metal layers.
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  187. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method and system for controlling the presence of fluorine in refractory metal layers.
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  188. Sinha,Ashok; Xi,Ming; Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua, Method and system for controlling the presence of fluorine in refractory metal layers.
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  189. Xi, Ming; Sinha, Ashok; Kori, Moris; Mak, Alfred W.; Lu, Xinliang; Lai, Ken Kaung; Littau, Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
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  190. Xi,Ming; Sinha,Ashok; Kori,Moris; Mak,Alfred W.; Lu,Xinliang; Lai,Ken Kaung; Littau,Karl A., Method for depositing tungsten-containing layers by vapor deposition techniques.
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  191. Yu, Keven; Chandrachood, Madhavi; Sabharwal, Amitabh; Kumar, Ajay, Method for etching EUV material layers utilized to form a photomask.
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  192. Shinriki, Hiroshi; Jeong, Daekyun, Method for forming Ta-Ru liner layer for Cu wiring.
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  193. Choi, Sung-Je, Method for forming a dielectric layer of a semiconductor device.
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  194. Park, Dae-Gyu; Jang, Se-Aug; Lee, Jeong-Youb; Cho, Hung-Jae; Kim, Jung-Ho, Method for forming aluminum oxide as a gate dielectric.
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  195. Shinriki, Hiroshi; Namba, Kunitoshi; Jeong, Daekyun, Method for forming metal film by ALD using beta-diketone metal complex.
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  196. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua, Method for forming tungsten materials during vapor deposition processes.
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  197. Kori, Moris; Mak, Alfred W.; Byun, Jeong Soo; Lei, Lawrence Chung-Lai; Chung, Hua; Sinha, Ashok; Xi, Ming, Method for forming tungsten materials during vapor deposition processes.
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  198. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
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  199. Kori,Moris; Mak,Alfred W.; Byun,Jeong Soo; Lei,Lawrence Chung Lai; Chung,Hua; Sinha,Ashok; Xi,Ming, Method for forming tungsten materials during vapor deposition processes.
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  200. Metzner, Craig; Kher, Shreyas; Kim, Yeong Kwan; Rocklein, M. Noel; George, Steven M., Method for hafnium nitride deposition.
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  201. Kraus, Brenda D; Marsh, Eugene P., Method for making conductive nanoparticle charge storage element.
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  202. Tseng Hsing-Huang ; Tobin Philip J., Method for manufacturing a high dielectric constant gate oxide for use in semiconductor integrated circuits.
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  203. Ganguli, Seshadri; Chen, Ling; Ku, Vincent W., Method for providing gas to a processing chamber.
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  204. Ma, Paul; Aubuchon, Joseph F.; Lu, Jiang; Chang, Mei, Method for tuning a deposition rate during an atomic layer deposition process.
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  205. Verplancken, Donald J.; Sinha, Ashok K., Method of delivering activated species for rapid cyclical deposition.
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  206. Park, Hyung Sang, Method of depositing Ru films having high density.
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  207. Conor Stefan Rafferty ; Glen David Wilk, Method of fabricating a dielectric layer.
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  208. Ahn, Kie Y.; Forbes, Leonard, Method of fabricating an apparatus having a lanthanum-metal oxide dielectric layer.
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  209. Chung, Hua; Chen, Ling; Ku, Vincent W., Method of film deposition using activated precursor gases.
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  210. Dong Su Park KR; Kwang Seok Jeon KR, Method of forming a capacitor in a semiconductor device.
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  211. Park, Dae Gyu; Cha, Tae Ho, Method of forming a gate electrode in a semiconductor device.
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  212. Sandhu, Sukesh; Prall, Kirk D., Method of forming a memory device and semiconductor device.
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  213. Ahn, Kie Y.; Forbes, Leonard, Method of forming an apparatus having a dielectric containing cerium oxide and aluminum oxide.
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  214. Ahn, Kie Y.; Forbes, Leonard, Method of forming apparatus having oxide films formed using atomic layer deposition.
    상세보기
  215. Ahn, Kie Y.; Forbes, Leonard, Method of forming lutetium and lanthanum dielectric structures.
    상세보기
  216. Ahn, Kie Y.; Forbes, Leonard, Method of forming lutetium and lanthanum dielectric structures.
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  217. Kostamo, Juhana; Soininen, Pekka J.; Elers, Kai-Erik; Haukka, Suvi, Method of growing electrical conductors.
    상세보기
  218. Kostamo,Juhana; Soininen,Pekka J.; Elers,Kai Erik; Haukka,Suvi, Method of growing electrical conductors.
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  219. Soininen, Pekka J.; Elers, Kai-Erik; Haukka, Suvi, Method of growing electrical conductors.
    상세보기
  220. Yu Bin, Method of locally forming a high-k dielectric gate insulator.
    상세보기
  221. Yong Sik Yu KR; Kweon Hong KR, Method of manufacturing a capacitor in a semiconductor device.
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  222. Spitzer, Andreas; Erben, Elke, Method of manufacturing a dielectric layer and corresponding semiconductor device.
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  223. Dae Gyu Park KR, Method of manufacturing a semiconductor device utilizing a(Al2O3)X-(TiO2)1-X gate dielectric film.
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  224. Chan Lim KR, Method of manufacturing an aluminum oxide film in a semiconductor device.
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  225. Gutsche, Martin; Seidl, Harald, Method of providing trench walls by using two-step etching processes.
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  226. Ramsbey Mark ; Pham Tuan D. ; Sun Yu ; Au Kenneth W., Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices.
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  227. Ramsbey Mark ; Pham Tuan D. ; Sun Yu ; Au Kenneth W., Methods and arrangements for forming a floating gate in non-volatile memory semiconductor devices.
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  228. Myo, Nyi Oo; Cho, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Methods for atomic layer deposition of hafnium-containing high-K dielectric materials.
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  229. Ahn, Kie Y.; Forbes, Leonard, Methods for atomic-layer deposition.
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  230. Pore, Viljami J.; Haukka, Suvi P.; Blomberg, Tom E.; Tois, Eva E., Methods for depositing nickel films and for making nickel silicide and nickel germanide.
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  231. Lai, Ken Kaung; Rajagopalan, Ravi; Khandelwal, Amit; Moorthy, Madhu; Gandikota, Srinivas; Castro, Joseph; Gelatos, Avgerinos V.; Knepfler, Cheryl; Jian, Ping; Fang, Hongbin; Huang, Chao-Ming; Xi, Ming; Yang, Michael X.; Chung, Hua; Byun, Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
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  232. Lai,Ken Kaung; Rajagopalan,Ravi; Khandelwal,Amit; Moorthy,Madhu; Gandikota,Srinivas; Castro,Joseph; Gelatos,Averginos V.; Knepfler,Cheryl; Jian,Ping; Fang,Hongbin; Huang,Chao Ming; Xi,Ming; Yang,Michael X.; Chung,Hua; Byun,Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
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  233. Marsh, Eugene P.; Kraus, Brenda D, Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps.
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  234. Grimbergen, Michael N., Methods for reducing photoresist interference when monitoring a target layer in a plasma process.
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  235. Kim, Jong Su; Park, Hyung Sang, Methods of depositing a ruthenium film.
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  236. Lee,Chang Hyun; Choi,Jung Dal; Ye,Byoung Woo, Methods of fabricating floating trap non-volatile semiconductor memory devices including high dielectric constant blocking insulating layers.
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  237. Segal,Vladimir M.; Li,Jianxing; Alford,Frank; Ferrasse,Stephane, Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions.
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  238. Ahn, Kie Y.; Forbes, Leonard, Methods of forming an insulating metal oxide.
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  239. Ahn,Ki Y.; Forbes,Leonard, Methods of forming assemblies comprising silicon-doped aluminum oxide.
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  240. Woodruff, Jacob Huffman, Methods of forming metal silicides.
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  241. Woodruff, Jacob Huffman, Methods of forming metal silicides.
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  242. Heo, Jin-Hwa; Kim, Chul-Sung; Koo, Bon-Young; Hwang, Ki-Hyun; Lee, Chang-Hyun, Methods of forming non-volatile memory devices.
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  243. Ahn,Kie Y.; Forbes,Leonard, Methods of forming silicon-doped aluminum oxide, and methods of forming transistors and memory devices.
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  244. Ahn,Kie Y.; Forbes,Leonard, Methods of forming silicon-doped aluminum oxide, and methods of forming transistors and memory devices.
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  245. Ahn, Kie Y.; Forbes, Leonard, Methods of forming zirconium aluminum oxide.
    상세보기
  246. Ahn,Kie Y., Methods, systems, and apparatus for uniform chemical-vapor depositions.
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  247. Liu, Zhenyu; Leicht, Peter Rudolf; Liu, Yixiong, Multilayer structured coatings for cutting tools.
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  248. Yang, Michael Xi; Yoon, Hyungsuk Alexander; Zhang, Hui; Fang, Hongbin; Xi, Ming, Multiple precursor cyclical deposition system.
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  249. Lee, Chang-Hyun; Choi, Jung-Dal, Non-volatile memory devices and methods of operating the same.
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  250. Lee, Chang-Hyun; Choi, Jung-Dal; Ye, Byoung-Woo, Non-volatile semiconductor memory devices.
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  251. Lee, Chang-Hyun; Choi, Jung-Dal; Ye, Byoung-Woo, Non-volatile semiconductor memory devices.
    상세보기
  252. Lee, Chang-Hyun; Choi, Jung-Dal; Ye, Byoung-Woo, Non-volatile semiconductor memory devices.
    상세보기
  253. Lee,Chang Hyun; Choi,Jung Dal; Ye,Byoung Woo, Non-volatile semiconductor memory devices.
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  254. Lee,Sung Hae; Lee,Chang Hyun; Hwang,Ki Hyun; Baek,Sung Kweon; Park,Kwang Min, Non-volatile semiconductor memory devices and methods of fabricating the same.
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  255. Mahajani, Maitreyee; Yudovsky, Joseph; McDougall, Brendan, Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool.
    상세보기
  256. Yang, Michael X.; Itoh, Toshio; Xi, Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
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  257. Yang,Michael X.; Itoh,Toshio; Xi,Ming, Plasma-enhanced cyclic layer deposition process for barrier layers.
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  258. Raisanen, Petri; Marcus, Steven, Plasma-enhanced deposition process for forming a metal oxide thin film and related structures.
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  259. Wood, Michael; Chin, Barry L.; Smith, Paul F.; Cheung, Robin, Post metal barrier/adhesion film.
    상세보기
  260. Cheung, Fred TK; Halliyal, Arvind, Precision high-K intergate dielectric layer.
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  261. Song, Kevin; Ravi, Jallepally; Li, Shih-Hung; Chen, Liang-Yuh, Process conditions and precursors for atomic layer deposition (ALD) of AL2O3.
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  262. Schaeffer, III, James K.; Raymond, Mark V.; Nguyen, Bich-Yen, Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber.
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  263. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
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  264. Ganguli, Seshadri; Yu, Sang-Ho; Phan, See-Eng; Chang, Mei; Khandelwal, Amit; Ha, Hyoung-Chan, Process for forming cobalt and cobalt silicide materials in tungsten contact applications.
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  265. Ganguli, Seshadri; Chu, Schubert S.; Chang, Mei; Yu, Sang-Ho; Moraes, Kevin; Phan, See-Eng, Process for forming cobalt-containing materials.
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  266. Senzaki, Yoshihide; Hochberg, Arthur Kenneth; Norman, John Anthony Thomas, Process for metal metalloid oxides and nitrides with compositional gradients.
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  267. Putkonen,Matti, Process for producing yttrium oxide thin films.
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  268. Putkonen, Matti, Process for producing zirconium oxide thin films.
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  269. Putkonen, Matti, Process for producing zirconium oxide thin films.
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  270. Wilk, Glen David; Ye, Peide, Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate.
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  271. Forbes, Leonard; Eldridge, Jerome M.; Ahn, Kie Y., Programmable array logic or memory devices with asymmetrical tunnel barriers.
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  272. Forbes,Leonard; Eldridge,Jerome M.; Ahn,Kie Y., Programmable array logic or memory devices with asymmetrical tunnel barriers.
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  273. Forbes,Leonard; Eldridge,Jerome M.; Ahn,Kie Y., Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers.
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  274. Forbes,Leonard; Eldridge,Jerome M.; Ahn,Kie Y., Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers.
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  275. Forbes,Leonard; Eldridge,Jerome M.; Ahn,Kie Y., Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers.
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  276. Forbes,Leonard; Eldridge,Jerome M.; Ahn,Kie Y., Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers.
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  277. Forbes,Leonard; Eldridge,Jerome M.; Ahn,Kie Y., Programmable array logic or memory with p-channel devices and asymmetrical tunnel barriers.
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  278. Forbes,Leonard, Programmable memory address and decode circuits with low tunnel barrier interpoly insulators.
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  279. Forbes,Leonard, Programmable memory address and decode circuits with low tunnel barrier interpoly insulators.
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  280. Lu, Xinliang; Jian, Ping; Yoo, Jong Hyun; Lai, Ken Kaung; Mak, Alfred W.; Jackson, Robert L.; Xi, Ming, Pulsed deposition process for tungsten nucleation.
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  281. Lu,Xinliang; Jian,Ping; Yoo,Jong Hyun; Lai,Ken Kaung; Mak,Alfred W.; Jackson,Robert L.; Xi,Ming, Pulsed nucleation deposition of tungsten layers.
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  282. Lee, Myoung-jae; Lee, Eun-hong; Park, Young-soo, Resistance random access memory and method of manufacturing the same.
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  283. Shinriki, Hiroshi; Inoue, Hiroaki, Ruthenium alloy film for copper interconnects.
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