초록 ▼

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

대표청구항 ▼

[ What is claimed is:] [1.] A method for manufacturing a semiconductor device comprising the steps of:preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;disposing said solution in contact with at l

[ What is claimed is:] [1.] A method for manufacturing a semiconductor device comprising the steps of:preparing a solution by dissolving or dispersing a substance in a liquid, said substance containing a catalyst for promoting a crystallization of silicon;disposing said solution in contact with at least a portion of a semiconductor film comprising silicon on an insulating surface;forming a continuous layer containing said catalyst in contact with said semiconductor film; andcrystallizing said semiconductor film by heating,wherein said catalyst is included in said solution at a concentration of 200 ppm or lower.