초록 ▼

This is a monolithic infrared detector readout circuit for a capacitive sensing element 111 wherein a high gain preamplifier 115 is biased by a large bias element 113, e.g. on the order of 10.sup.12 ohms. The output of the preamplifier 115 is a band-limited by a low pass single-pole filter 117 havin

This is a monolithic infrared detector readout circuit for a capacitive sensing element 111 wherein a high gain preamplifier 115 is biased by a large bias element 113, e.g. on the order of 10.sup.12 ohms. The output of the preamplifier 115 is a band-limited by a low pass single-pole filter 117 having a high value resistive element 119, e.g. on the order of 10.sup.9 ohms, and then is clamped by a clamp circuit 131 to a stable reference in a manner that doubles the amplitude of the signal and minimizes low frequency bias shifts and fixed pattern noise. The output of the clamp circuit 131 is buffered by buffer 123 prior to being multiplexed by row address signals. The output from a multiplex switch 125 is then applied to the column line for output to a video circuit or the like.

대표청구항 ▼

[ What is claimed is:] [1.] A detector circuit comprising:a matrix of unit cells, each of the unit cells having a cell output terminal;a multiplex switch connected between the output terminal of each unit cell and a video output terminal;each of the unit cells comprising physically therein:a sensing

[ What is claimed is:] [1.] A detector circuit comprising:a matrix of unit cells, each of the unit cells having a cell output terminal;a multiplex switch connected between the output terminal of each unit cell and a video output terminal;each of the unit cells comprising physically therein:a sensing element;a preamplifier having an input connected to the sensing element and an output;a clamp circuit having an input connected to the preamplifier output and an output; anda buffer having an input connected to the clamp circuit output and the cell output terminal.