초록 ▼

The present invention induces provides a gettering trench on the front surface of a device substrate. In one embodiment it induces stress and simultaneously forms a gettering zone 40 for gettering impurities in an integrated circuit structure. In another embodiment, the trench is filled with getteri

The present invention induces provides a gettering trench on the front surface of a device substrate. In one embodiment it induces stress and simultaneously forms a gettering zone 40 for gettering impurities in an integrated circuit structure. In another embodiment, the trench is filled with gettering material 72 such as polysilicon. The two gettering mechanisms may be combined 82,84. The invention is useful for providing gettering in bonded wafers and in silicon-on-insulator devices (FIGS. 4,5).

대표청구항 ▼

[ We claim the following:] [1.] An integrated circuit with a gettering site for gettering impurities comprising:a monocrystalline semiconductor device substrate having a front surface and an upper portion suitable for device formation, the upper portion of said semiconductor device substrate having

[ We claim the following:] [1.] An integrated circuit with a gettering site for gettering impurities comprising:a monocrystalline semiconductor device substrate having a front surface and an upper portion suitable for device formation, the upper portion of said semiconductor device substrate having an active region and an inactive region;at least one active device in the front surface in the active region; anda gettering site in the front surface of the substrate in the inactive region and spaced from the active region; said gettering site comprising a region of stress induced crystal lattice defects in the inactive region of the substrate for attracting impurities away from the active region of the substrate.