초록 ▼

Disclosed is a process for exposing a metal-containing surface feature on an integrated circuit wafer by laser ablation. According to the invention, a silicon dioxide passivation layer is provided upon the surface feature. The silicon dioxide layer is transparent to electromagnetic radiation having

Disclosed is a process for exposing a metal-containing surface feature on an integrated circuit wafer by laser ablation. According to the invention, a silicon dioxide passivation layer is provided upon the surface feature. The silicon dioxide layer is transparent to electromagnetic radiation having a specified wavelength, such that the electromagnetic radiation is directed through the silicon dioxide layer onto the underlying surface feature. A portion of the surface feature is ablated. Ablation of the surface feature causes removal of an overlying portion of the silicon dioxide layer, thereby exposing the surface feature. Laser ablation may further be performed on optional overlying layers of silicon nitride and polyimide.

대표청구항 ▼

[ What is claimed and desired to be secured by United States Letters Patent is:] [1.] A process for exposing a surface on a diffusion barrier layer, said process comprising:providing a semiconductor substrate;providing a diffusion barrier layer upon said semiconductor substrate;providing a silicon d

[ What is claimed and desired to be secured by United States Letters Patent is:] [1.] A process for exposing a surface on a diffusion barrier layer, said process comprising:providing a semiconductor substrate;providing a diffusion barrier layer upon said semiconductor substrate;providing a silicon dioxide layer upon said diffusion barrier layer, said silicon dioxide layer being substantially transparent to electromagnetic radiation having a selected wavelength; andlaser ablating a portion of said diffusion barrier layer by directing electromagnetic radiation having said selected wavelength through said silicon dioxide layer, a region of said silicon dioxide layer that is positioned upon said portion of said diffusion barrier being removed, thereby exposing a substantially planar surface on said diffusion barrier layer.