초록 ▼

A method of fabricating a semiconductor device on thinned wide bandgap material including providing a support having a planar surface and a semiconductor substrate. Implanting a layer of ions in the substrate to create a layer of microbubbles defining a thin film having a planar surface and a remain

A method of fabricating a semiconductor device on thinned wide bandgap material including providing a support having a planar surface and a semiconductor substrate. Implanting a layer of ions in the substrate to create a layer of microbubbles defining a thin film having a planar surface and a remaining mass separated by the layer of implanted ions. Intimately contacting the planar surface of the thin film to the planar surface of the support and heating the support and substrate to separate the remaining mass from the thin film. A semiconductor device is formed on the thin film, and the support is thinned.

대표청구항 ▼

[ Having fully described the invention in such clear and concise terms as to enable those skilled in the art to understand and practice the same, the invention claimed is:] [1.] A method of fabricating a semiconductor device on thinned wide bandgap material including the steps of:providing a support

[ Having fully described the invention in such clear and concise terms as to enable those skilled in the art to understand and practice the same, the invention claimed is:] [1.] A method of fabricating a semiconductor device on thinned wide bandgap material including the steps of:providing a support having a planar surface;providing a semiconductor substrate;implanting a layer of ions in the semiconductor substrate to create a layer of microbubbles defining a film having a planar surface and a remaining mass separated by the layer of implanted ions;forming a metal layer covering the planar surface of the semiconductor substrate;intimately contacting the metal layer of the film to the planar surface of the support;heating the support and the semiconductor substrate to separate the remaining mass from the film;forming the semiconductor device on the film; andthinning the support.