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Single ended match sense amplifier 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-015/00
출원번호 US-0940298 (1997-09-30)
발명자 / 주소
  • Kongetira Poonacha
출원인 / 주소
  • Sun Microsystems, Inc.
대리인 / 주소
    Conley, Rose & Tayon, P.C.Stephenson
인용정보 피인용 횟수 : 30  인용 특허 : 6

초록

A single-ended match sense amplifier is provided for use in a translation lookaside buffer. The translation lookaside buffer includes a CAM array for storing x bit virtual addresses. The CAM array has n rows and x columns of CAM cells, each CAM cell having input node for receiving a virtual address

대표청구항

[ What is claimed is:] [1.] A translation lookaside buffer comprising:a cam array for storing x-bit virtual addresses, the cam array having n rows and x columns of cam cells, each cam cell having an input node for receiving a virtual address bit signal, and a cam miss/match node;n rows of minor sens

이 특허에 인용된 특허 (6)

  1. Mehring Peter A. (Wilmington MA) Becker Robert D. (Shirley MA), Apparatus and method for a space saving translation lookaside buffer for content addressable memory.
  2. Braceras George M. (Colchester VT) Evans Donald A. (Williston VT) Wistort Reid A. (Westford VT), Content addressable memory for a data processing system.
  3. Holst John C. (San Jose CA), Decoder scheme for fully associative translation-lookaside buffer.
  4. Yonezawa Hirokazu (Hyogo JPX) Yamaguchi Seiji (Osaka JPX), Semiconductor device having combined fully associative memories.
  5. Oka Akihisa (Osaka JPX) Yamaguchi Seiji (Osaka JPX), Semiconductor memory device.
  6. Komoto Eiji (Tokyo JPX) Nakamura Takao (Tokyo JPX), Variable length code decoder using a content addressable memory with match inhibiting gate.

이 특허를 인용한 특허 (30)

  1. Yasuda, Yohei; Komai, Hiromitsu; Yamamoto, Kensuke; Koyanagi, Masaru; Hirashima, Yasuhiro, Amplifier.
  2. Jung, Chulmin; Kim, Tae, Array sense amplifiers, memory devices and systems including same, and methods of operation.
  3. Lien Chuen-Der ; Wu Chau-Chin, Cam array with minimum cell size.
  4. Singh, Mandeep; McIntyre, David Hugh; Ngo, Hung Phuong, Conditionally precharged dynamic content addressable memory.
  5. Proebsting, Robert J.; Chu, Scott Yu-Fan; Park, Kee, Content addressable and random access memory devices having high-speed sense amplifiers therein with low power consumption requirements.
  6. Gerhard Hellner DE; Rolf Sautter DE; Otto Martin Wagner DE, Content addressable memory.
  7. Proebsting, Robert J.; Chu, Scott Yu-Fan; Park, Kee, Content addressable memory (CAM) devices having CAM array blocks therein that conserve bit line power during staged compare operations.
  8. Park, Kee; Chu, Scott Yu-Fan, Content addressable memory (CAM) devices having CAM array blocks therein that perform pipelined and interleaved search, write and read operations and methods of operating same.
  9. Park, Kee; Chu, Scott Yu-Fan, Content addressable memory (CAM) devices having adjustable match line precharge circuits therein.
  10. Proebsting, Robert J.; Park, Kee; Chu, Scott Yu-Fan, Content addressable memory (CAM) devices having dedicated mask cell sub-arrays therein and methods of operating same.
  11. Park, Kee; Chu, Scott Yu-Fan, Content addressable memory (CAM) devices having speed adjustable match line signal repeaters therein.
  12. Lien,Chuen Der; Park,Kee; Chu,Scott Yu Fan, Content addressable memory (CAM) devices that support power saving longest prefix match operations and methods of operating same.
  13. Park, Kee; Chu, Scott Yu-Fan, Content addressable memory (CAM) devices that utilize dual-capture match line signal repeaters to achieve desired speed/power tradeoff and methods of operating same.
  14. Park, Kee; Chu, Scott Yu-Fan, Content addressable memory (CAM) devices that utilize segmented match lines and word lines to support pipelined search and write operations and methods of operating same.
  15. Srinivasan,Varadarajan; Khanna,Sandeep; Nataraj,Bindiganavale S., Content addressable memory with latching sense amplifier.
  16. Patel,Vipul, DRAM CAM memory.
  17. Braceras, George M.; Pilo, Harold, Dynamic precharge decode scheme for fast DRAM.
  18. Patel, Vipul, Folded DRAM CAM cell.
  19. Francis B. Heile, Programmable logic devices with improved content addressable memory capabilities.
  20. Heile Francis B., Programmable logic devices with improved content addressable memory capabilities.
  21. Pereira Jose Pio, Selective match line discharging in a partitioned content addressable memory array.
  22. Barth, Jr., John Edward, Sense amplifier and methods thereof for single ended line sensing.
  23. Meng,Anita X.; Voelkel,Eric H., Sense amplifier architecture for content addressable memory device.
  24. Meng,Anita X.; Voelkel,Eric H., Sense amplifier circuit for content addressable memory device.
  25. Barth, Jr., John Edward, Sense amplifier for single-ended sensing.
  26. Kwack,Jinho, System and method for minimizing noise on a dynamic node.
  27. Brown Jeff S., Technique for reducing peak current in memory operation.
  28. McCombs, Edward M.; Kamdar, Chetan C.; Miller, William V., Translation lookaside buffer structure including an output comparator.
  29. Pedersen,Bruce B, Versatile RAM for a programmable logic device.
  30. Pedersen,Bruce B, Versatile RAM for programmable logic device.
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