초록 ▼

A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are activated by radiating laser beams or a strong light equivalent thereto from above so that the laser bea

A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are activated by radiating laser beams or a strong light equivalent thereto from above so that the laser beams or the equivalent strong light are radiated onto the impurity regions and on an boundary between the impurity region and an active region adjoining the impurity region.

대표청구항 ▼

[ What is claimed is:] [1.] A semiconductor device comprising:a substrate having an insulating surface;an active matrix circuit formed on the insulating surface;at least one driver, formed on the insulating surface, for driving the active matrix circuit; anda circuit connected with said at least one

[ What is claimed is:] [1.] A semiconductor device comprising:a substrate having an insulating surface;an active matrix circuit formed on the insulating surface;at least one driver, formed on the insulating surface, for driving the active matrix circuit; anda circuit connected with said at least one driver provided on the insulating surface, said circuit comprising at least one of a memory, a CPU, an input port, and a correcting memory,wherein at least one of said active matrix circuit, said driver, and said circuit comprises at least one P-channel thin film transistor and at least one N-channel thin film transistor,each of said P-channel and N-channel thin film transistors comprising:a semiconductor film formed over the substrate;a first region including a channel region formed within said semiconductor film;a pair of second regions formed within said semiconductor film and doped with an impurity for giving a one conductivity type thereto, said second regions functioning as source and drain regions;a pair of third regions, each being interposed between said first region and said second regions, respectively; anda gate electrode located adjacent to said first region with a gate insulating film interposed therebetween,wherein widths of said third regions in said N-channel thin film transistors are larger than those in said P-channel thin film transistors.