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Light-emitting semiconductor device using group III nitride compound

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-033/00
출원번호 US-0616884 (1996-03-18)
우선권정보 JP-0209183 (1995-07-24)
발명자 / 주소
  • Koike Masayoshi,JPX
  • Asami Shinya,JPX
출원인 / 주소
  • Toyoda Gosei Co., Ltd., JPX
대리인 / 주소
    Pillsbury Madison & Sutro LLP
인용정보 피인용 횟수 : 69  인용 특허 : 3

초록

An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the li

대표청구항

[ What is claimed is:] [1.] A group III nitride compound semiconductor light-emitting device comprising:an emission layer doped with both an acceptor impurity and a donor impurity; said emission layer comprising a multi-layer structure having a layer doped with said acceptor impurity and a layer dop

이 특허에 인용된 특허 (3)

  1. Nakamura Shuji (Anan JPX) Mukai Takashi (Anan JPX) Iwasa Naruhito (Anan JPX), Light-emitting gallium nitride-based compound semiconductor device.
  2. Sassa Michinari (Aichi-ken JPX) Tamaki Makoto (Aichi-ken JPX) Koike Masayoshi (Aichi-ken JPX) Shibata Naoki (Aichi-ken JPX) Yamada Masami (Aichi-ken JPX) Oshio Takahide (Aichi-ken JPX), Light-emitting semiconductor device using group III nitride compound.
  3. Sassa Michinari (Aichi-ken JPX) Koike Masayoshi (Aichi-ken JPX) Manabe Katsuhide (Aichi-ken JPX) Koide Norikatsu (Aichi-ken JPX) Kato Hisaki (Aichi-ken JPX) Shibata Naoki (Aichi-ken JPX) Asai Makoto , Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprisi.

이 특허를 인용한 특허 (69)

  1. Wang, Tao, GaN structures having low dislocation density and methods of manufacture.
  2. Sugawara, Hideto; Hongo, Chie, Gallium nitride based semiconductor device and method of manufacturing same.
  3. Kawagoe,Kimihiro, Gallium nitride compound semiconductor element.
  4. Koike, Masayoshi; Yamasaki, Shiro, Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device.
  5. Koike, Masayoshi; Yamasaki, Shiro, Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device.
  6. Uemura,Toshiya, Group III nitride compound semiconductor light emitting element.
  7. Shibata, Naoki; Kozawa, Takahiro; Tomita, Kazuyoshi; Kachi, Tetsu, Group III nitride compound semiconductor light-emitting element.
  8. Shibata,Naoki; Kozawa,Takahiro, Group III nitride compound semiconductor light-emitting element.
  9. Ohba Yasuo,JPX ; Yoshida Hiroaki,JPX, III-N semiconductor light-emitting element having strain-moderating crystalline buffer layers.
  10. Goetz, Werner; Gardner, Nathan Fredrick; Kern, Richard Scott; Kim, Andrew Youngkyu; Munkholm, Anneli; Stockman, Stephen A.; Kocot, Christopher P.; Schneider, Jr., Richard P., III-Nitride light emitting devices with low driving voltage.
  11. Grillot, Patrick N.; Gardner, Nathan F.; Goetz, Werner K.; Romano, Linda T., III-nitride light emitting devices grown on templates to reduce strain.
  12. Grillot, Patrick N.; Gardner, Nathan F.; Goetz, Werner K.; Romano, Linda T., III-nitride light emitting devices grown on templates to reduce strain.
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  18. Kato,Hisaki; Watanabe,Hiroshi; Koide,Norikatsu; Asami,Shinya, Light-emitting semiconductor device using gallium nitride compound semiconductor.
  19. Koike Masayoshi,JPX ; Asami Shinya,JPX, Light-emitting semiconductor device using group III nitride compound.
  20. Koike, Masayoshi; Asami, Shinya, Light-emitting semiconductor device using group III nitride compound.
  21. Watanabe, Hiroshi; Shibata, Naoki, Method for manufacturing light-emitting device using a group III nitride compound semiconductor.
  22. Watanabe, Hiroshi; Shibata, Naoki, Method for manufacturing light-emitting device using a group III nitride compound semiconductor.
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  32. Nagahama, Shinichi; Senoh, Masayuki; Nakamura, Shuji, Nitride semiconductor device.
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  34. Nakamura, Shuji; Mukai, Takashi; Tanizawa, Koji; Mitani, Tomotsugu; Marui, Hiroshi, Nitride semiconductor device.
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  42. Kozaki, Tokuya, Nitride semiconductor device with improved lifetime and high output power.
  43. Kozaki, Tokuya; Sano, Masahiko; Nakamura, Shuji; Nagahama, Shinichi, Nitride semiconductor laser device.
  44. Kozaki,Tokuya; Sano,Masahiko; Nakamura,Shuji; Nagahama,Shinichi, Nitride semiconductor laser device.
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  60. Lin,Jin Ywan; Tu,Chung Cheng, Series connection of two light emitting diodes through semiconductor manufacture process.
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  62. Nagahama, Shinichi; Senoh, Masayuki; Nakamura, Shuji, Superlattice nitride semiconductor LD device.
  63. Ko, Hyunchul; Johnson, Randall E.; Duong, Dung T.; Winberg, Paul N., System and method for a lens and phosphor layer.
  64. Duong, Dung T.; Ko, Hyunchul; Johnson, Randall E.; Winberg, Paul N.; Radkov, Emil, System and method for color mixing lens array.
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  66. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R.; Pickering, Elliot M.; Khizar, Muhammad, System and method for emitter layer shaping.
  67. Duong, Dung T.; Winberg, Paul N.; Thomas, Matthew R.; Pickering, Elliot M.; Khizar, Muhammad, System and method for emitter layer shaping.
  68. Takeuchi, Tetsuya; Chang, Ying-Ian, System and method for increasing nitrogen incorporation into a semiconductor material layer using an additional element.
  69. Duong, Dung T.; Winberg, Paul N.; Vaz, Oscar, Systems and methods for packaging light-emitting diode devices.
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