$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Process for laser detection of gas and contaminants in a wafer transport gas tunnel 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
출원번호 US-0894497 (1997-07-29)
우선권정보 JP-0152695 (1996-06-13)
국제출원번호 PCT/JP96/03852 (1996-12-27)
§371/§102 date 19970729 (19970729)
국제공개번호 WO-9724760 (1997-07-10)
발명자 / 주소
  • Ishihara Yoshio,JPX
  • Toda Masayuki,JPX
  • Ohmi Tadahiro,JPX
출원인 / 주소
  • Nippon Sanso Corporation
대리인 / 주소
    Darby & Darby
인용정보 피인용 횟수 : 114  인용 특허 : 4

초록

A process of using a transport system for transporting substrate wafer, for making semiconductor integrated circuits and liquid crystal display panels and the like advanced devices, is presented. The object is to prevent surface degradation which may be inflicted on the surface to interfere with pro

대표청구항

[ We claim:] [1.] A method for transporting substrate wafers from one process chamber to another process chamber through a gas tunnel, comprising the steps of:flowing a purge gas containing an inert gas or a gaseous mixture of an Inert gas and oxygen through said gas tunnel;measuring contamination l

이 특허에 인용된 특허 (4)

  1. Lehto Ari (Helsinki FIX), Apparatus and method for measuring gas concentrations.
  2. Moore Gerald (Boggs Township ; Armstrong County PA) Hawley James G. (San Jose CA) Bradley William C. (Gastonia NC) Harper Brian M. (Wildmoor GB2), Apparatus for imaging gas.
  3. Whittaker Edward A. (Hoboken NJ) Sun Hoi C. (Plainsboro NJ), Method and apparatus for dual modulation laser spectroscopy.
  4. Ono Yuji (Sagamihara JPX) Mihara Katsuhiko (Hachioji JPX), Treatment system and treatment apparatus.

이 특허를 인용한 특허 (114)

  1. Nemani, Srinivas D.; Koshizawa, Takehito, Air gap process.
  2. Purayath, Vinod R.; Ingle, Nitin K., Air gaps between copper lines.
  3. Kang, Sean; Ko, Jungmin; Luere, Oliver, Airgap formation with damage-free copper.
  4. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum oxide selective etch.
  5. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Aluminum selective etch.
  6. Xue, Jun; Hsu, Ching-Mei; Li, Zihui; Godet, Ludovic; Wang, Anchuan; Ingle, Nitin K., Anisotropic gap etch.
  7. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  8. Benjaminson, David; Lubomirsky, Dmitry; Math, Ananda Seelavanth; Natarajan, Saravanakumar; Chourey, Shubham, Bolted wafer chuck thermal management systems and methods for wafer processing systems.
  9. Lubomirsky, Dmitry, Chamber with flow-through source.
  10. Lubomirsky, Dmitry, Chamber with flow-through source.
  11. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  12. Liang, Qiwei; Chen, Xinglong; Chuc, Kien; Lubomirsky, Dmitry; Park, Soonam; Yang, Jang-Gyoo; Venkataraman, Shankar; Tran, Toan; Hinckley, Kimberly; Garg, Saurabh, Chemical control features in wafer process equipment.
  13. Wang, Xikun; Pandit, Mandar; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K.; Liu, Jie, Chlorine-based hardmask removal.
  14. Wang, Xikun; Cui, Zhenjiang; Park, Soonam; Ingle, Nitin K., Cobalt-containing material removal.
  15. Lubomirsky, Dmitry; Kim, Sung Je, Conditioned semiconductor system parts.
  16. Chung,Ki Sup; Sin,Kyusik; Yang,Danning; Chen,Yingjian; Nease,Brant, Damascene process for fabricating poles in recording heads.
  17. Park, Seung H.; Wang, Yunyu; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Differential silicon oxide etch.
  18. Purayath, Vinod R.; Wang, Anchuan; Ingle, Nitin K., Dopant etch selectivity control.
  19. Wang, Xikun; Hsu, Ching-Mei; Ingle, Nitin K.; Li, Zihui; Wang, Anchuan, Dry-etch for selective tungsten removal.
  20. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Wang, Yunyu; Lee, Young, Dry-etch for silicon-and-carbon-containing films.
  21. Ren, He; Yang, Jang-Gyoo; Baek, Jonghoon; Wang, Anchuan; Park, Soonam; Garg, Saurabh; Chen, Xinglong; Ingle, Nitin K., Dry-etch selectivity.
  22. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Dual discharge modes operation for remote plasma.
  23. Butscher, Vera; Ehm, Dirk Heinrich, EUV lithography apparatus and method for detecting particles in an EUV lithography apparatus.
  24. Ingle, Nitin K.; Lubomirsky, Dmitry; Chen, Xinglong; Venkataraman, Shankar, Enhanced etching processes using remote plasma sources.
  25. Korolik, Mikhail; Ingle, Nitin K.; Zhang, Jingchun; Wang, Anchuan; Liu, Jie, Etch suppression with germanium.
  26. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Even tungsten etch for high aspect ratio trenches.
  27. Purayath, Vinod R.; Ingle, Nitin K., Flash gate air gap.
  28. Pandit, Mandar; Wang, Xikun; Cui, Zhenjiang; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Fluorine-based hardmask removal.
  29. Park, Seung; Wang, Xikun; Liu, Jie; Wang, Anchuan; Kim, Sang-jin, Gas-phase tungsten etch.
  30. Kim, Sung Je; Kalita, Laksheswar; Pareek, Yogita; Kadam, Ankur; Goradia, Prerna Sonthalia; Thakur, Bipin; Lubomirsky, Dmitry, Generation of compact alumina passivation layers on aluminum plasma equipment components.
  31. Korolik, Mikhail; Ingle, Nitin; Kioussis, Dimitri, Germanium etching systems and methods.
  32. Cho, Tae; Kang, Sang Won; Yang, Dongqing; Lu, Raymond W.; Hillman, Peter; Celeste, Nicholas; Tan, Tien Fak; Park, Soonam; Lubomirsky, Dmitry, Grooved insulator to reduce leakage current.
  33. Tran, Toan Q.; Malik, Sultan; Lubomirsky, Dmitry; Roy, Shambhu N.; Kobayashi, Satoru; Cho, Tae Seung; Park, Soonam; Venkataraman, Shankar, High temperature chuck for plasma processing systems.
  34. Chen, Zhijun; Li, Zihui; Ingle, Nitin K.; Wang, Anchuan; Venkataraman, Shankar, Highly selective doped oxide removal method.
  35. Chen, Xinglong; Lubomirsky, Dmitry; Venkataraman, Shankar, Insulated semiconductor faceplate designs.
  36. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  37. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated bit-line airgap formation and gate stack post clean.
  38. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Integrated oxide and nitride recess for better channel contact in 3D architectures.
  39. Purayath, Vinod R.; Thakur, Randhir; Venkataraman, Shankar; Ingle, Nitin K., Integrated oxide recess and floating gate fin trimming.
  40. Nguyen, Son T.; Lubomirsky, Dmitry, Layered thin film heater and method of fabrication.
  41. Hsu, Ching-Mei; Ingle, Nitin K.; Hamana, Hiroshi; Wang, Anchuan, Low temperature gas-phase carbon removal.
  42. Chung, Ki Sup; Sin, Kyusik; Yang, Danning; Chen, Yingjian; Nease, Brant, Magnetic recording head formed by damascene process.
  43. Purayath, Vinod R.; Thakur, Randhir; Ingle, Nitin K., Metal air gap.
  44. Park,Chang Man; Funada,Shin; Rana,Amritpal S.; Scott,Daniel E., Method and apparatus for controlling magnetostriction in a spin valve sensor.
  45. Moon, Ki Seok; Park, Chang Man, Method for fabricating a spacer layer for a magnetoresistive element.
  46. Takahashi, Masashi; Nagata, Toshio; Tsurugida, Yoshirou; Ohsako, Takashi; Mori, Hirotaka; Ohara, Akihiko; Uchida, Hidetsugu; Uchida, Hiroaki; Yoshida, Katsuji; Takahashi, Masahiro, Method for forming insulating film and for manufacturing integrated circuit.
  47. Zhang, Lei Larry; Shen, Yong; Zhu, Honglin; Wang, Yizhong, Method for providing a perpendicular magnetic recording (PMR) head.
  48. Ko, Jungmin, Method of fin patterning.
  49. Li, Zihui; Kao, Chia-Ling; Wang, Anchuan; Ingle, Nitin K., Methods for anisotropic control of selective silicon removal.
  50. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin, Methods for etch of SiN films.
  51. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Methods for etch of metal and metal-oxide films.
  52. Chen, Zhijun; Park, Seung; Korolik, Mikhail; Wang, Anchuan; Ingle, Nitin K., Non-local plasma oxide etch.
  53. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K.; Anthis, Jeffrey W.; Schmiege, Benjamin, Oxide and metal removal.
  54. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  55. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Oxide etch selectivity enhancement.
  56. Xu, Lin; Chen, Zhijun; Wang, Anchuan; Nguyen, Son T., Oxide etch selectivity systems and methods.
  57. Lubomirsky, Dmitry, Oxygen compatible plasma source.
  58. Chen, Xinglong; Yang, Jang-Gyoo; Tam, Alexander; Tam, Elisha, Pedestal with multi-zone temperature control and multiple purge capabilities.
  59. Lubomirsky, Dmitry, Plasma processing system with direct outlet toroidal plasma source.
  60. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Plasma-free metal etch.
  61. Cho, Tae Seung; Sen, Yi-Heng; Park, Soonam; Lubomirsky, Dmitry, Polarity control for remote plasma.
  62. Choi, Tom; Ko, Jungmin; Kang, Sean, Poly directional etch by oxidation.
  63. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  64. Zhang, Jingchun; Zhang, Hanshen, Procedure for etch rate consistency.
  65. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  66. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  67. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  68. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  69. Wang, Anchuan; Chen, Xinglong; Li, Zihui; Hamana, Hiroshi; Chen, Zhijun; Hsu, Ching-Mei; Huang, Jiayin; Ingle, Nitin K.; Lubomirsky, Dmitry; Venkataraman, Shankar; Thakur, Randhir, Processing systems and methods for halide scavenging.
  70. Naik, Mehul; Ma, Paul F.; Nemani, Srinivas D., Protective via cap for improved interconnect performance.
  71. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry, Radial waveguide systems and methods for post-match control of microwaves.
  72. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  73. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  74. Kobayashi, Satoru; Park, Soonam; Lubomirsky, Dmitry; Sugai, Hideo, Radial waveguide systems and methods for post-match control of microwaves.
  75. Chen, Zhijun; Zhang, Jingchun; Hsu, Ching-Mei; Park, Seung; Wang, Anchuan; Ingle, Nitin K., Radical-component oxide etch.
  76. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  77. Xu, Lin; Chen, Zhijun; Huang, Jiayin; Wang, Anchuan, Removal methods for high aspect ratio structures.
  78. Yang, Dongqing; Zhu, Lala; Wang, Fei; Ingle, Nitin K., Saving ion-damaged spacers.
  79. Chen, Zhijun; Huang, Jiayin; Wang, Anchuan; Ingle, Nitin, Selective SiN lateral recess.
  80. Wang, Xikun; Lei, Jianxin; Ingle, Nitin; Shaviv, Roey, Selective cobalt removal for bottom up gapfill.
  81. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  82. Ingle, Nitin K.; Kachian, Jessica Sevanne; Xu, Lin; Park, Soonam; Wang, Xikun; Anthis, Jeffrey W., Selective etch for metal-containing materials.
  83. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  84. Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Selective etch for silicon films.
  85. Wang, Anchuan; Zhang, Jingchun; Ingle, Nitin K.; Lee, Young S., Selective etch of silicon by way of metastable hydrogen termination.
  86. Chen, Zhijun; Li, Zihui; Wang, Anchuan; Ingle, Nitin K.; Venkataraman, Shankar, Selective etch of silicon nitride.
  87. Citla, Bhargav; Ying, Chentsau; Nemani, Srinivas; Babayan, Viachslav; Stowell, Michael, Selective etch using material modification and RF pulsing.
  88. Wang, Xikun; Ingle, Nitin, Selective in situ cobalt residue removal.
  89. Hoinkis, Mark; Miyazoe, Hiroyuki; Joseph, Eric, Selective sputtering for pattern transfer.
  90. Liu, Jie; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K.; Park, Seung; Chen, Zhijun; Hsu, Ching-Mei, Selective titanium nitride etching.
  91. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K.; Lubomirsky, Dmitry, Selective titanium nitride removal.
  92. Wang, Xikun; Ingle, Nitin, Selective tungsten removal.
  93. Pandit, Mandar B.; Wang, Anchuan; Ingle, Nitin K., Self-aligned process.
  94. Arnepalli, Ranga Rao; Goradia, Prerna Sonthalia; Visser, Robert Jan; Ingle, Nitin; Korolik, Mikhail; Biswas, Jayeeta; Lodha, Saurabh, Self-limiting atomic thermal etching systems and methods.
  95. Hasegawa,Hiroyuki; Yamaoka,Tomonori; Ishihara,Yoshio; Masusaki,Hiroshi, Semiconductor manufacturing method and semiconductor manufacturing apparatus.
  96. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  97. Yang, Jang-Gyoo; Chen, Xinglong; Park, Soonam; Baek, Jonghoon; Garg, Saurabh; Venkataraman, Shankar, Semiconductor processing with DC assisted RF power for improved control.
  98. Nguyen, Andrew; Ramaswamy, Kartik; Nemani, Srinivas; Howard, Bradley; Vishwanath, Yogananda Sarode, Semiconductor system assemblies and methods of operation.
  99. Ko, Jungmin; Choi, Tom; Ingle, Nitin; Kim, Kwang-Soo; Wou, Theodore, SiN spacer profile patterning.
  100. Park, Seung; Wang, Anchuan, Silicon etch process with tunable selectivity to SiO2 and other materials.
  101. Korolik, Mikhail; Ingle, Nitin K.; Wang, Anchuan; Xu, Jingjing, Silicon germanium processing.
  102. Chen, Zhijun; Wang, Anchuan; Ingle, Nitin K., Silicon oxide selective removal.
  103. Huang, Jiayin; Chen, Zhijun; Wang, Anchuan; Ingle, Nitin, Silicon pretreatment for nitride removal.
  104. Li, Zihui; Hsu, Ching-Mei; Zhang, Hanshen; Zhang, Jingchun, Silicon selective removal.
  105. Chen, Zhijun; Zhang, Jingchun; Wang, Anchuan; Ingle, Nitin K., Silicon-carbon-nitride selective etch.
  106. Kim, Hun Sang; Choi, Jinhan; Koseki, Shinichi, Simplified litho-etch-litho-etch process.
  107. Luere, Olivier; Kang, Sean S.; Nemani, Srinivas D., Spacer formation.
  108. Benjaminson, David; Lubomirsky, Dmitry, Thermal management systems and methods for wafer processing systems.
  109. Wang, Xikun; Pandit, Mandar; Wang, Anchuan; Ingle, Nitin K., Titanium nitride removal.
  110. Wang, Xikun; Xu, Lin; Wang, Anchuan; Ingle, Nitin K., Titanium oxide etch.
  111. Masayuki Toda JP; Tadahiro Ohmi JP; Yoshio Ishihara JP, Transportation method for substrate wafers and transportation apparatus.
  112. Wang, Xikun; Liu, Jie; Wang, Anchuan; Ingle, Nitin K., Tungsten separation.
  113. Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., V trench dry etch.
  114. Liu, Jie; Purayath, Vinod R.; Wang, Xikun; Wang, Anchuan; Ingle, Nitin K., Vertical gate separation.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로