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Growth of bulk single crystals of aluminum nitride from a melt 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-025/02
출원번호 US-0944393 (1997-10-06)
발명자 / 주소
  • Hunter Charles Eric
대리인 / 주소
    Faust
인용정보 피인용 횟수 : 43  인용 특허 : 13

초록 ▼

Large diameter single crystals of aluminum nitride (AlN) are grown isotropically by injecting a nitrogen-containing gas into liquid aluminum at elevated temperatures. A seed crystal that is maintained at a temperature below that of the surrounding liquid aluminum is pulled from the melt, while the A

대표청구항 ▼

[ That which is claimed is:] [1.] A method for producing a bulk single crystal of AlN comprising the steps of:contacting nitrogen with a melt of liquid Al to form AlN in the melt; whiledepositing the AlN so formed in single crystalline form on a seed crystal that is in physical contact with the melt

이 특허에 인용된 특허 (13)

  1. Jasinski Thomas J. (Medford MA) Witt August F. (Winchester MA), Apparatus for growing crystals.
    상세보기
  2. Rutz, Richard F., Epitaxial crystal fabrication of SiC:AlN.
    상세보기
  3. Hunter Charles Eric, Growth of bulk single crystals of aluminum nitride.
    상세보기
  4. Suzuki Akira (Nara JPX) Furukawa Katsuki (Sakai JPX) Shigeta Mitsuhiro (Joyo JPX) Fujii Yoshihisa (Nara JPX), Light emitting diode.
    상세보기
  5. Vodakov Jury A. (prospekt Engelsa ; 69/1 ; kv. 35 Leningrad SU) Mokhov Evgeny N. (prospekt Energetikov ; 54 ; korpus 2 ; kv. 59 Leningrad SU), Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition techniqu.
    상세보기
  6. Iyechika Yasushi (Ibaraki JPX) Takada Tomoyuki (Ibaraki JPX), Method for manufacturing group III-V compound semiconductor crystals.
    상세보기
  7. Suzuki Akira (Nara JPX) Furukawa Katsuki (Sakai JPX) Shigeta Mitsuhiro (Tenri JPX), Method of fabricating single-crystal substrates of silicon carbide.
    상세보기
  8. Nii Keita (Kyoto JPX), Method of manufacturing a hetero-junction bi-polar transistor.
    상세보기
  9. Furukawa Katsuki (Sakai JPX) Tajima Yoshimitsu (Nara JPX) Suzuki Akira (Nara JPX), Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal.
    상세보기
  10. Kim Sung C. (Boise ID) Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering.
    상세보기
  11. Rutz Richard F. (Cold Spring NY), Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide.
    상세보기
  12. Rutz Richard F. (Cold Spring NY), Structure containing epitaxial crystals on a substrate.
    상세보기
  13. Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
    상세보기

이 특허를 인용한 특허 (43)

  1. Schujman, Sandra B.; Rao, Shailaja P.; Bondokov, Robert T.; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them.
    상세보기
  2. Schujman, Sandra B.; Rao, Shailaja P.; Bondokov, Robert T.; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them.
    상세보기
  3. Katou, Tomohisa; Nagai, Ichirou; Miura, Tomonori; Kamata, Hiroyuki, Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal.
    상세보기
  4. Tischler, Michael A.; Kuech, Thomas F.; Vaudo, Robert P., Bulk single crystal gallium nitride and method of making same.
    상세보기
  5. Tischler, Michael A.; Kuech, Thomas F.; Vaudo, Robert P., Bulk single crystal gallium nitride and method of making same.
    상세보기
  6. Tischler, Michael A.; Kuech, Thomas F.; Vaudo, Robert P., Bulk single crystal gallium nitride and method of making same.
    상세보기
  7. Tischler,Michael A.; Kuech,Thomas F.; Vaudo,Robert P., Bulk single crystal gallium nitride and method of making same.
    상세보기
  8. Hunter Charles Eric, Bulk single crystals of aluminum nitride.
    상세보기
  9. Kimbel, Steven Lawrence; Meyer, Benjamin Michael; Zepeda, Salvador; Ferguson, Steven John, Crystal puller for inhibiting melt contamination.
    상세보기
  10. Slack, Glen A.; Schujman, Sandra B., Deep-eutectic melt growth of nitride crystals.
    상세보기
  11. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  12. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  13. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Stack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  14. Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo; Slack, Glen A., Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  15. Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A.; Rao, Shailaja P.; Gibb, Shawn Robert, Defect reduction in seeded aluminum nitride crystal growth.
    상세보기
  16. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
    상세보기
  17. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
    상세보기
  18. Slack, Glen A.; Schowalter, Leo J., Doped aluminum nitride crystals and methods of making them.
    상세보기
  19. Vaudo, Robert P.; Brandes, George R.; Tischler, Michael A.; Kelly, Michael K., Free-standing (Al, Ga, In)N and parting method for forming same.
    상세보기
  20. Bondokov, Robert T.; Rao, Shailaja P.; Gibb, Shawn R.; Schowalter, Leo J., Growth of large aluminum nitride single crystals with thermal-gradient control.
    상세보기
  21. Bondokov, Robert T.; Rao, Shailaja P.; Gibb, Shawn Robert; Schowalter, Leo J., Growth of large aluminum nitride single crystals with thermal-gradient control.
    상세보기
  22. Flynn, Jeffrey S.; Brandes, George R.; Vaudo, Robert P.; Keogh, David M.; Xu, Xueping; Landini, Barbara E., III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates.
    상세보기
  23. Vaudo, Robert P.; Flynn, Jeffrey S.; Brandes, George R.; Redwing, Joan M.; Tischler, Michael A., III-V nitride substrate boule and method of making and using the same.
    상세보기
  24. Vaudo, Robert P.; Flynn, Jeffrey S.; Brandes, George R.; Redwing, Joan M.; Tischler, Michael A., III-V nitride substrate boule and method of making and using the same.
    상세보기
  25. Bondokov, Robert T.; Morgan, Kenneth; Slack, Glen A.; Schowalter, Leo J., Large aluminum nitride crystals with reduced defects and methods of making them.
    상세보기
  26. Bondokov, Robert; Morgan, Kenneth E.; Slack, Glen A.; Schowalter, Leo J., Large aluminum nitride crystals with reduced defects and methods of making them.
    상세보기
  27. Cuomo, Jerome J.; Williams, N. Mark; Hanser, Andrew David; Carlson, Eric Porter; Thomas, Darin Taze, MIIIN based materials and methods and apparatus for producing same.
    상세보기
  28. Cuomo, Jerome J.; Williams, N. Mark; Hanser, Andrew David; Carlson, Eric Porter; Thomas, Darin Taze, Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon.
    상세보기
  29. Schowalter, Leo J.; Slack, Glen A.; Rojo, J. Carlos, Method and apparatus for producing large, single-crystals of aluminum nitride.
    상세보기
  30. Schowalter, Leo; Slack, Glen A.; Rojo, Juan Carlos; Bondokov, Robert T.; Morgan, Kenneth E.; Smart, Joseph A., Method and apparatus for producing large, single-crystals of aluminum nitride.
    상세보기
  31. Kobayashi,Yoshimasa; Hayase,Toru; Yamada,Naohito, Method for manufacturing aluminum nitride single crystal.
    상세보기
  32. Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Methods for controllable doping of aluminum nitride bulk crystals.
    상세보기
  33. Mueller, Stephan, Methods of fabricating silicon carbide crystals.
    상세보기
  34. Mueller,Stephan, Methods of fabricating silicon carbide crystals.
    상세보기
  35. Mueller,Stephan, Methods of fabricating silicon carbide crystals.
    상세보기
  36. Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen; Morgan, Kenneth E.; Bondokov, Robert T.; Bettles, Timothy J.; Slack, Glen A., Nitride semiconductor heterostructures and related methods.
    상세보기
  37. Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen; Morgan, Kenneth E.; Bondokov, Robert T.; Bettles, Timothy J.; Slack, Glen A., Nitride semiconductor heterostructures and related methods.
    상세보기
  38. Cuomo, Jerome J.; Williams, N. Mark, Non-thermionic sputter material transport device, methods of use, and materials produced thereby.
    상세보기
  39. Schowalter, Leo J.; Chen, Jianfeng; Grandusky, James R., Photon extraction from nitride ultraviolet light-emitting devices.
    상세보기
  40. Schowalter, Leo J.; Chen, Jianfeng; Grandusky, James R., Photon extraction from nitride ultraviolet light-emitting devices.
    상세보기
  41. Grandusky, James R.; Schowalter, Leo J.; Jamil, Muhammad; Mendrick, Mark C.; Gibb, Shawn R., Pseudomorphic electronic and optoelectronic devices having planar contacts.
    상세보기
  42. Hunter Charles Eric, Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys.
    상세보기
  43. Schowalter, Leo J.; Smart, Joseph A.; Grandusky, James R.; Liu, Shiwen, Thick pseudomorphic nitride epitaxial layers.
    상세보기

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