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Semiconductor, semiconductor device, and method for fabricating the same

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
  • H01L-021/84
출원번호 US-0893361 (1997-07-15)
우선권정보 JP-0048535 (1993-02-15)
발명자 / 주소
  • Yamazaki Shunpei,JPX
  • Takemura Yasuhiko,JPX
  • Zhang Hongyong,JPX
  • Takayama Toru,JPX
  • Uochi Hideki,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Sixbey, Friedman, Leedom & Ferguson, P.C.Ferguson, Jr.
인용정보 피인용 횟수 : 165  인용 특허 : 66

초록

Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the

대표청구항

[ What is claimed is:] [1.] A method of manufacturing a semiconductor device comprising the steps of:disposing a catalyst material in contact with a semiconductor film to be crystallized;crystallizing said semiconductor film by heating wherein said catalyst material functions to promote the crystall

이 특허에 인용된 특허 (66)

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