$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Electro-optical device and method for driving the same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G02F-011/36
출원번호 US-0912298 (1997-07-31)
우선권정보 JP-0087780 (1991-03-26)
발명자 / 주소
  • Yamazaki Shunpei,JPX
  • Mase Akira,JPX
  • Hiroki Masaaki,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Sixbey, Friedman, Leedom & Ferguson, PCRobinson
인용정보 피인용 횟수 : 122  인용 특허 : 42

초록

In case of driving the active electro-optical device, a gradation display can be carried out in a driving method having a display timing determined in relation to a time F for writing one screen and a time (t) for writing in one picture element, by applying a reference signal in a cycle of the time

대표청구항

[ What is claimed is:] [1.] A method for forming an electro-optical device comprising the steps of:forming a plurality of thin film transistors, each of said thin film transistors having at least a semiconductor film to form a channel region;forming an interlayer insulating film comprising an inorga

이 특허에 인용된 특허 (42)

  1. Shimada Takayuki (Nara JPX) Matsushima Yasuhiro (Kashihara JPX) Takafuji Yutaka (Nara JPX), Active matrix display device.
  2. Clerc Jean-Frdric (Saint-Egreve FRX), Active matrix display screen permitting the display of gray levels.
  3. Kahn Frederic J. (Palo Alto CA), Active matrix liquid crystal liquid crystal light valve including a dielectric mirror upon a leveling layer and having f.
  4. Misawa Toshiyuki (Nagano JPX) Oshima Hiroyuki (Nagano JPX), Active matrix panel having display and driver TFT\s on the same substrate.
  5. Yamazaki Shunpei (Tokyo JPX) Mase Akira (Atsugi JPX) Hiroki Masaaki (Isehara JPX), Active matrix type electro-optical device.
  6. Kawahara Yukito (Tokyo JPX), Active matrix-addressed liquid-crystal display device.
  7. Uchida Masahide (Suwa JPX) Shida Fumio (Suwa JPX), Circuit for driving a liquid crystal display panel.
  8. Uchida Masahide (Suwa JPX) Shida Fumio (Suwa JPX), Circuit for driving a liquid crystal display panel.
  9. Nicholas Keith H. (Reigate GB2), Color LCD including transistors having layer thicknesses selected for small photocurrents.
  10. Kusukawa Hiroyuki (Tokyo JPX) Nakajima Yasuhide (Tokyo JPX), Color filter.
  11. Lloyd Randahl B. (San Marcos CA), Compact liquid crystal display system.
  12. Inoue Hiroshi (Yokohama JPX) Mizutome Atsushi (Hayamachi JPX) Kanno Hideo (Kawasaki JPX) Sakamoto Eiji (Hiratsuka JPX) Osada Yoshiyuki (Atsugi JPX), Display apparatus.
  13. Kanno Hideo (Kawasaki JPX) Inoue Hiroshi (Yokohama JPX) Mizutome Atsushi (Tokyo JPX), Display apparatus.
  14. Yamazaki Shunpei (Tokyo JPX) Mase Akira (Atsugi JPX) Hiroki Masaaki (Isehara JPX), Electro-optical device and driving having an improved electrode and driving arrangement.
  15. Hiroki Masaaki (Kanagawa JPX) Mase Akira (Aichi JPX), Electro-optical device having a ratio controlling means for providing gradated display levels.
  16. Ohwada Junichi (Hitachi JPX) Kondo Katsumi (Hitachi JPX), Ferroelectric liquid crystal device and method of driving the same.
  17. McGreivy ; Denis J. ; Peterson ; Henry T. ; Leupp ; Alex M., Light-insensitive matrix addressed liquid crystal display system.
  18. Hayashi Yuji (Kanagawa JPX), Liquid crystal display unit having large image area and high resolution.
  19. Tsujikawa Susumu (Tokyo JPX) Okumura Fujio (Tokyo JPX), Liquid crystal light valve showing an improved display contrast.
  20. Wakai Yoichi (Suwa JPX) Baba Hiroyuki (Suwa JPX), Method for driving a liquid crystal display device.
  21. Takafuji Yutaka (Nara JPX) Kishi Kohhei (Nara JPX) Yano Kohzo (Yamatokoriyama JPX), Method for making a thin film transistor.
  22. Borel Joseph (Echirolles FR) Deutsch Jean-Claude (Grenoble FR) Labrunie Guy (Seyssinet FR) Robert Jacques (St-Egreve FR), Method of controlling an optical characteristic.
  23. Sasaki Nobuo (Kawasaki JPX), Method of making aluminum gate self-aligned FET by selective beam annealing through reflective and antireflective coatin.
  24. Kubota Taishi (Tokyo JPX), Method of making insulated-gate field effect transistor.
  25. Masuda Kiyoshi (Tokorozawa JPX) Kohda Shigeto (Tokyo JPX) Sakai Shigenobu (Tokyo JPX) Kimura Kazuo (Tokorozawa JPX) Nomura Tomoyoshi (Tokyo JPX), Method of operation for an active matrix type display device.
  26. Sasaki Nobuo (Kawasaki JPX), Method of producing MOS FET type semiconductor device.
  27. Godejahn ; Jr. Gordon C. (Santa Ana CA), Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and cond.
  28. Clerc Jean F. (10 ; Allee du Pre Blanc 38240 Meylan FRX) Robert Jacques (Domain de la Ronce ; Les Etanges A5 Rue de la Ronce 92410 Ville d\Avray FRX), Process for the control of an optical characteristic of a material by signals of increasing time periods.
  29. Iwase Masao (Kanagawa JPX) Fukuda Sanae (Kanagawa JPX) Yoshimi Makoto (Tokyo JPX), Semiconductor device.
  30. Kyuragi, Hakaru; Oikawa, Hideo, Semiconductor device and process for manufacturing the same.
  31. Takahashi Takahiko (Tokyo JPX) Itoh Funikazu (Fujisawa JPX) Shimase Akira (Yokohama JPX) Yamaguchi HIroshi (Fujisawa JPX) Hongo Mikio (Yokohama JPX) Haraichi Satoshi (Yokohama JPX), Semiconductor integrated circuit device and process for producing the same.
  32. Watkins, Randy W.; Bell, Robert J.; Martorano, Joseph A.; Essinger, Walter F., System for displaying information with multiple shades of a color on a thin-film EL matrix display panel.
  33. Ovshinsky Stanford R. (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Thin film field effect transistor and method of making same.
  34. Ishizu Akira (Amagasaki JPX) Nishimura Tadashi (Itami JPX) Inoue Yasuo (Itami JPX), Thin film semiconductor device with oxide film on insulating layer.
  35. Wakai Haruo (Fussa JPX) Yamamura Nobuyuki (Hachioji JPX) Sato Syunichi (Kawagoe JPX) Kanbara Minoru (Hachioji JPX), Thin film transistor.
  36. Wakai Haruo (Fussa JPX) Yamamura Nobuyuki (Hachioji JPX) Sato Syunichi (Kawagoe JPX) Kanbara Minoru (Hachioji JPX), Thin film transistor array.
  37. Wakai Haruo (Fussa JPX) Yamamura Nobuyuki (Hachioji JPX) Sato Syunichi (Kawagoe JPX) Kanbara Minoru (HAchioji JPX), Thin film transistor array having single light shield layer over transistors and gate and drain lines.
  38. Sasaki Makoto (Tokyo JPX) Sato Syunichi (Kawagoe JPX) Mori Hisatoshi (Fussa JPX), Thin film transistor panel and manufacturing method thereof.
  39. Dohjo Masayuki (Yokohama JPX) Oana Yasuhisa (Yokohama JPX) Ikeda Mitsushi (Yokohama JPX), Thin-film transistor.
  40. Ichikawa Shouji (Tokyo JPX), Thin-film transistor array used for liquid-crystal display device.
  41. Brotherton Stanley D. (Sussex GB2), Thin-film transistor circuit.
  42. Busta Heinz H. (Park Ridge IL), Vertical gate thin film transistors in liquid crystal array.

이 특허를 인용한 특허 (122)

  1. Yamazaki, Shunpei; Nishi, Takeshi, Active matrix display device comprising a light shielding layer surrounding a transparent conductive film and a portion of said light shielding layer extends over and said transparent conductive film.
  2. Yamazaki, Shunpei, Active matrix electro-luminescent display device with an organic leveling layer.
  3. Yamazaki Shunpei,JPX, Active matrix electro-luminescent display thin film transistor.
  4. Yamazaki, Shunpei, Active matrix electro-luminescent display with an organic leveling layer.
  5. Yamazaki,Shunpei, Active matrix electro-luminescent display with an organic leveling layer.
  6. Zhang, Hongyong, Active matrix type liquid crystal display device.
  7. Yamazaki, Shunpei, Device including resin film.
  8. Yamazaki Shunpei,JPX, Display device.
  9. Yamazaki, Shunpei, Display device.
  10. Yamazaki, Shunpei, Display device.
  11. Yamazaki, Shunpei, Display device.
  12. Yamazaki, Shunpei; Koyama, Jun; Yamagata, Hirokazu, Display device.
  13. Yamazaki, Shunpei; Koyama, Jun; Yamagata, Hirokazu, Display device.
  14. Yamazaki, Shunpei; Koyama, Jun; Yamagata, Hirokazu, Display device.
  15. Yamazaki, Shunpei; Koyama, Jun; Yamagata, Hirokazu, Display device.
  16. Yamazaki, Shunpei; Koyama, Jun; Yamagata, Hirokazu, Display device.
  17. Yamazaki,Shunpei, Display device.
  18. Yamazaki,Shunpei, Display device.
  19. Yamazaki, Shunpei; Nishi, Takeshi, Display device having resin black matrix over counter substrate.
  20. Yamazaki, Shunpei; Nishi, Takeshi, Display device having resin layer.
  21. Yamazaki,Shunpei, Display device having underlying insulating film and insulating films.
  22. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Display switch with double layered gate insulation and resinous interlayer dielectric.
  23. Hirakata, Yoshiharu; Nishi, Takeshi; Yamazaki, Shunpei, Electro-optical device.
  24. Hiroki, Masaaki; Mase, Akira, Electro-optical device.
  25. Hiroki, Masaaki; Mase, Akira, Electro-optical device.
  26. Hongyong Zhang JP, Electro-optical device.
  27. Murade, Masao, Electro-optical device.
  28. Yamazaki,Shunpei, Electro-optical device.
  29. Shunpei Yamazaki JP; Akira Mase JP; Masaaki Hiroki JP, Electro-optical device and method for driving the same.
  30. Yamazaki,Shunpei; Mase,Akira; Hiroki,Masaaki, Electro-optical device and method for driving the same.
  31. Yamazaki Shunpei,JPX, Electro-optical device and method for manufacturing the same.
  32. Yamazaki, Shunpei; Takemura, Yasuhiko, Electro-optical device and method for manufacturing the same.
  33. Yamazaki, Shunpei; Takemura, Yasuhiko, Electro-optical device and method for manufacturing the same.
  34. Yamazaki, Shunpei; Takemura, Yasuhiko, Electro-optical device and method for manufacturing the same.
  35. Yamazaki, Shunpei; Takemura, Yasuhiko, Electro-optical device and method for manufacturing the same.
  36. Yamazaki,Shunpei, Electro-optical device and method for manufacturing the same.
  37. Yamazaki,Shunpei, Electro-optical device and method for manufacturing the same.
  38. Yamazaki,Shunpei; Takemura,Yasuhiko, Electro-optical device and method for manufacturing the same.
  39. Takemura, Yasuhiko, Electro-optical device and method of driving the same.
  40. Takemura, Yasuhiko, Electro-optical device and method of driving the same.
  41. Yasuhiko Takemura JP, Electro-optical device and method of driving the same.
  42. Imamura,Yoichi, Electro-optical device and method of manufacturing the same, element driving device and method of manufacturing the same, element substrate, and electronic apparatus.
  43. Imamura,Yoichi, Electro-optical device and method of manufacturing the same, element driving device and method of manufacturing the same, element substrate, and electronic apparatus.
  44. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Electro-optical device having silicon nitride interlayer insulating film.
  45. Yamazaki, Shunpei, Electro-optical device which comprises thin film transistors and method for manufacturing the same.
  46. Murade, Masao, Electro-optical device, method for fabricating the same, and electronic apparatus.
  47. Hiroki, Masaaki; Mase, Akira, Electro-optical display device having thin film transistors including a gate insulating film containing fluorine.
  48. Higuchi, Masayuki; Murakami, Satoshi; Nakazawa, Misako, Electrooptical device, method of manufacturing the same, and electronic equipment.
  49. Higuchi,Masayuki; Murakami,Satoshi; Nakazawa,Misako, Electrooptical device, method of manufacturing the same, and electronic equipment.
  50. Kawazoe, Hidechika; Aoki, Eiji; Hsu, Sheng Teng; Fujii, Katsumasa, Electrostatic discharge protection device for semiconductor integrated circuit, method for producing the same, and electrostatic discharge protection circuit using the same.
  51. Yamazaki, Shunpei; Fukunaga, Takeshi, Fabricating a tapered hole incorporating a resinous silicon containing film.
  52. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  53. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Fabrication method of semiconductor device.
  54. Yamazaki, Shunpei, Gate insulated field effect transistor and method of manufacturing the same.
  55. Yamazaki Shunpei,JPX, Gate insulated field effect transistors and method of manufacturing the same.
  56. Fukumoto, Ryota; Miyake, Hiroyuki; Tanada, Yoshifumi; Takahashi, Kei, Light-emitting device.
  57. Fukumoto, Ryota; Miyake, Hiroyuki; Tanada, Yoshifumi; Takahashi, Kei, Light-emitting device.
  58. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving.
  59. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving same.
  60. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving same.
  61. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving same.
  62. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display and method of driving same.
  63. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display device.
  64. Hirakata, Yoshiharu; Nishi, Takeshi; Yamazaki, Shunpei, Liquid crystal display device having a gap retaining member made of resin formed directly over the driver circuit.
  65. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display device having black matrix.
  66. Yamazaki, Shunpei; Nishi, Takeshi, Liquid crystal display device having resin layer contacts a transparent conductive film.
  67. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  68. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki, Method for fabricating a semiconductor device.
  69. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP, Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization.
  70. Ohtani, Hisashi; Nakazawa, Misako; Murakami, Satoshi, Method for producing a semiconductor device by etch back process.
  71. Yamazaki, Shunpei; Fukunaga, Takeshi, Method of fabricating contact holes in a semiconductor device.
  72. Zhang, Hongyong, Method of fabricating semiconductor device.
  73. Zhang, Hongyong, Method of fabricating semiconductor device.
  74. Zhang, Hongyong, Method of fabricating semiconductor device.
  75. Zhang, Hongyong, Method of fabricating semiconductor device.
  76. Hiroki,Masaaki; Mase,Akira; Yamazaki,Shunpei, Method of making an active-type LCD with digitally graded display.
  77. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji, Method of manufacturing a semiconductor device.
  78. Shunpei Yamazaki JP; Hisashi Ohtani JP; Jun Koyama JP; Satoshi Teramoto JP, Reflective liquid crystal display panel and device using same.
  79. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Teramoto, Satoshi, Reflective liquid crystal display panel and device using same.
  80. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Teramoto, Satoshi, Reflective liquid crystal display panel and device using same.
  81. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Teramoto, Satoshi, Reflective liquid crystal display panel and device using same.
  82. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Teramoto, Satoshi, Reflective liquid crystal display panel and device using same.
  83. Yamazaki, Shunpei; Ohtani, Hisashi; Koyama, Jun; Teramoto, Satoshi, Reflective liquid crystal display panel and device using same.
  84. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor active region of TFTs having radial crystal grains through the whole area of the region.
  85. Ohtani,Hisashi; Nakazawa,Misako; Murakami,Satoshi, Semiconductor device.
  86. Shunpei Yamazaki JP, Semiconductor device.
  87. Shunpei Yamazaki JP, Semiconductor device.
  88. Yamazaki, Shunpei, Semiconductor device.
  89. Yamazaki,Shunpei, Semiconductor device.
  90. Yamazaki,Shunpei, Semiconductor device.
  91. Zhang, Hongyong, Semiconductor device and electronic device.
  92. Zhang,Hongyong, Semiconductor device and electronic device.
  93. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX, Semiconductor device and fabrication method thereof.
  94. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki, Semiconductor device and fabrication method thereof.
  95. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP, Semiconductor device and its manufacturing method.
  96. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  97. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and its manufacturing method.
  98. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and its manufacturing method.
  99. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
  100. Suzawa, Hideomi; Kusuyama, Yoshihiro, Semiconductor device and manufacturing method thereof.
  101. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  102. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method for fabricating the same.
  103. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method for fabricating the same.
  104. Hongyong Zhang JP; Satoshi Teramoto JP, Semiconductor device and method for making same.
  105. Yamazaki Shunpei,JPX ; Fukunaga Takeshi,JPX, Semiconductor device and method of fabricating same.
  106. Yamazaki, Shunpei; Fukunaga, Takeshi, Semiconductor device and method of fabricating same.
  107. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji, Semiconductor device and method of fabricating same.
  108. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device and method of fabricating same.
  109. Zhang Hongyong,JPX ; Teramoto Satoshi,JPX, Semiconductor device and method of making thereof.
  110. Zhang, Hongyong; Teramoto, Satoshi, Semiconductor device and method of making thereof.
  111. Zhang,Hongyong; Teramoto,Satoshi, Semiconductor device and method of making thereof.
  112. Ohtani,Hisashi; Nakazawa,Misako; Murakami,Satoshi, Semiconductor device and process for producing the same.
  113. Zhang,Hongyong, Semiconductor device having a conductive layer with a light shielding part.
  114. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji, Semiconductor device having a crystalline semiconductor film.
  115. Yamazaki Shunpei,JPX, Semiconductor device having crystalline silicon clusters.
  116. Yamazaki, Shunpei; Mase, Akira; Hiroki, Masaaki; Takemura, Yasuhiko; Zhang, Hongyong; Uochi, Hideki; Nemoto, Hideki, Semiconductor device having interlayer insulating film.
  117. Yamazaki, Shunpei; Miyanaga, Akiharu; Teramoto, Satoshi, Semiconductor device using a semiconductor film having substantially no grain boundary.
  118. Fukada,Takeshi, Semiconductor device with diamond-like carbon film on backside of substrate.
  119. Osame, Mitsuaki; Miyazaki, Aya, Semiconductor device, display device having the same and electronic appliance.
  120. Yamazaki, Shunpei; Mase, Akira; Hiroki, Masaaki; Takemura, Yasuhiko; Zhang, Hongyong; Uochi, Hideki; Nemoto, Hideki, Semiconductor display device.
  121. Yamazaki, Shunpei; Mase, Akira; Hiroki, Masaaki; Takemura, Yasuhiko; Zhang, Hongyong; Uochi, Hideki; Nemoto, Hideki, Semiconductor display device.
  122. Hisashi Ohtani JP, Transistor with variable channel width.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로