초록 ▼

A method for producing a thin film solar cell includes preparing a substrate of a low purity material and having opposed front and rear surfaces; forming an insulating film on the front surface of the substrate; forming a second conductivity type active layer of a high purity material on the insulat

A method for producing a thin film solar cell includes preparing a substrate of a low purity material and having opposed front and rear surfaces; forming an insulating film on the front surface of the substrate; forming a second conductivity type active layer of a high purity material on the insulating film with a front surface exposed; forming a second conductivity type semiconductor region within the active layer, reaching the front surface, to produce a p-n junction for light-to-electricity conversion; forming an anti-reflection film on the front surface of the active layer, the anti-reflection film reducing reflection of incident light; forming a surface electrode in contact with the front surface of the active layer; adhering the front surface side of the active layer to a supporting plate and selectively etching the low purity substrate from the rear surface to form a supporting substrate supporting the active layer; and forming a rear electrode on the rear surface of the supporting substrate contacting the active layer.

대표청구항 ▼

[ What is claimed is:] [1.] A method for producing a thin film solar cell comprising, successively:preparing a substrate comprising a metallurgical grade material and having opposed front and rear surfaces;forming an insulating film on the front surface of the substrate;forming a first conductivity

[ What is claimed is:] [1.] A method for producing a thin film solar cell comprising, successively:preparing a substrate comprising a metallurgical grade material and having opposed front and rear surfaces;forming an insulating film on the front surface of the substrate;forming a first conductivity type active layer on the insulating film with an exposed front surface;forming a second conductivity type, opposite the first conductivity type, semiconductor region entirely within the active layer at the front surface, to produce a p-n junction for light-to-electricity conversion;forming an anti-reflection film on the front surface of the active layer, the anti-reflection film reducing reflection of incident light;forming a surface electrode in contact with the front surface of the active layer;adhering the front surface side of the active layer to a supporting plate and selectively etching the substrate from the rear surface to form a supporting substrate supporting the active layer; andforming a rear electrode on the rear surface of the supporting substrate contacting the active layer.