초록 ▼

The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce to

The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

대표청구항 ▼

[ What is claimed is:] [1.] A process for depositing an insulating layer on a substrate on a heater in a chamber, said process comprising the steps of:heating said heater to a temperature of at least about 500.degree. C. and below a reflow temperature of a phosphosilicate glass (PSG) film to be depo

[ What is claimed is:] [1.] A process for depositing an insulating layer on a substrate on a heater in a chamber, said process comprising the steps of:heating said heater to a temperature of at least about 500.degree. C. and below a reflow temperature of a phosphosilicate glass (PSG) film to be deposited in said chamber;pressurizing said chamber to a pressure of between about 10 to about 760 torr; andintroducing silicon, oxygen, and phosphorus into said chamber to deposit said phosphosilicate glass (PSG) film on said substrate on said heater at said temperature.