초록

A CVD process or a sublimation process for doping an SiC monocrystal uses an organic boron compound whose molecules contain at least one boron atom chemically bonded to at least one carbon atom. Boron trialkyls are preferred organic boron compounds.

대표청구항 ▼

[ What is claimed is:] [1.] A process for producing monocrystalline silicon carbide doped with boron by chemical vapor deposition on a substrate, comprising the steps of:a) supplying silicon and carbon by conveying at least one precursor into a recipient,b) supplying boron by conveying at least one

[ What is claimed is:] [1.] A process for producing monocrystalline silicon carbide doped with boron by chemical vapor deposition on a substrate, comprising the steps of:a) supplying silicon and carbon by conveying at least one precursor into a recipient,b) supplying boron by conveying at least one organic compound whose molecules contain at least one carbon atom chemically bonded to at least one boron atom into a recipient,c) setting a crystallization surface of the substrate to at least 1000.degree. C.,d) forming a gas phase comprising the supplied silicon and carbon,e) establishing an excess of carbon compared to silicon in the gas phase, andf) growing monocrystalline silicon carbide on the crystallization surface from the at least one precursor and the at least one organic compound.