초록 ▼

A rf plasma enhanced chemical vapor deposition process is presented, wherein a precursor gas stream having a high helium content produces hard, wear resistant, hermetically sealing, high refractive index Diamond-Like-Carbon (DLC) coatings on numerous substrates at deposition rates of at least 0.4 .m

A rf plasma enhanced chemical vapor deposition process is presented, wherein a precursor gas stream having a high helium content produces hard, wear resistant, hermetically sealing, high refractive index Diamond-Like-Carbon (DLC) coatings on numerous substrates at deposition rates of at least 0.4 .mu.m/hr. Internal pressures of 1 to 10 Torr and radio frequencies no higher than 100 kHz are employed. The process may be applied to both batch and linear production methods. Linear products such as optical fibers, capillary tubing, wires, and sheets can be coated in-line while minimizing the introduction of flaws on their surfaces and minimizing exacerbation of any pre-existing flaws. The effects of surface flaws can be minimized further by introducing a helium etch of the substrate surface prior to exposure to the DLC coating precursor gas mixture.

대표청구항 ▼

[ What is claimed is:] [1.] A method for depositing protective Diamond-Like-Carbon (DLC) coatings having a refractive index ranging from 1.84 to 2.45 on a substrate at deposition rates above 0.4 .mu.m/hr and at elevated pressures by plasma enhanced chemical vapor deposition comprising the steps ofa

[ What is claimed is:] [1.] A method for depositing protective Diamond-Like-Carbon (DLC) coatings having a refractive index ranging from 1.84 to 2.45 on a substrate at deposition rates above 0.4 .mu.m/hr and at elevated pressures by plasma enhanced chemical vapor deposition comprising the steps ofa mixing a hydrocarbon gas and helium to form a precursor gas, wherein said precursor gas comprises at least 40% helium by volume;introducing said substrate into a reaction chamber;introducing a flow of said precursor gas into said reaction chamber so as to maintain said elevated pressure in said reaction chamber between above 2 Torr and about 10 Torr; andinducing a plasma by radio frequency means in said precursor gas in close proximity to said substrate and operating at a frequency of less than 100 kHz.