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System and method for measuring properties of a semiconductor substrate in a fabrication line 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01R-031/28
출원번호 US-0637244 (1996-04-24)
발명자 / 주소
  • Borden Peter G.
출원인 / 주소
  • Boxer Cross, Inc.
대리인 / 주소
    Gray Cary Ware & Freidenrich
인용정보 피인용 횟수 : 45  인용 특허 : 8

초록 ▼

A system for measuring a property of a semiconductor substrate, wherein an analyzer beam is generated and transmitted to the substrate, and a generation beam, superposed on top of the analyzer beam, is also generated and transmitted to the substrate. A response generated by the generation beam, in t

대표청구항 ▼

[ I claim:] [1.] A system for measuring the value of a property of a semiconductor substrate, comprising:means for generating an analyzer beam;means for generating a generation beam;means for focusing the generation beam on the substrate and for focusing the analyzer beam on the substrate, the gener

이 특허에 인용된 특허 (8)

  1. Nikawa Kiyoshi (Tokyo JPX) Hanagama Yasuko (Tokyo JPX) Nakamura Toyokazu (Tokyo JPX), Apparatus for diagnosing interconnections of semiconductor integrated circuits.
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  2. Yoshizawa Masahiro (Kanagawa JPX) Kikuchi Akira (Kanagawa JPX) Wada Kou (Tokyo JPX) Fujinami Minpei (Tokyo JPX) Shimazu Nobuo (Tokyo JPX), Characteristic test apparatus for electronic device and method for using the same.
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  3. Yoshizawa Masahiro (Kanagawa JPX) Kikuchi Akira (Kanagawa JPX) Wada Kou (Tokyo JPX) Fujinami Minpei (Tokyo JPX) Shimazu Nobuo (Tokyo JPX), Charged beam radiation apparatus.
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  4. Batchelder, John S.; Taubenblatt, Marc A., Measurement of size and refractive index of particles using the complex forward-scattered electromagnetic field.
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  5. Kirino Yoshio (Tokyo JPX) Kusama Tateo (Tokyo JPX), Method and apparatus for measuring a deep impurity level of a semiconductor crystal.
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  6. Batchelder John S. (Somers NY) DeCain Donald M. (New York NY) Hobbs Philip C. D. (Briarcliff Manor NY) Taubenblatt Marc A. (Pleasantville NY), Particle path determination system.
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  7. Batchelder John S. (Tarrytown NY) DeCain Donald M. (New York NY) Taubenblatt Marc A. (Tarrytown NY) Wickramasinghe Hermantha K. (Chappaqua NY) Williams Clayton C. (Peekskill NY), Particulate inspection of fluids using interferometric light measurements.
    상세보기
  8. Takahashi, Hironori; Aoshima, Shinichiro; Tsuchiya, Yutaka, Voltage detecting device.
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이 특허를 인용한 특허 (45)

  1. Borden, Peter G.; Nijmeijer, Regina G., Apparatus and method for determining the active dopant profile in a semiconductor wafer.
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  2. Peter G. Borden ; Regina G. Nijmeijer ; Jiping Li, Apparatus and method for evaluating a semiconductor wafer.
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  3. Borden, Peter G.; Li, Ji Ping, Apparatus and method for measuring a property of a layer in a multilayered structure.
    상세보기
  4. Borden,Peter G.; Li,Ji Ping, Apparatus and method for measuring a property of a layer in a multilayered structure.
    상세보기
  5. Majewski, Alexander; Noll, Robert; Abreu, Rene, Apparatus, method and computer-readable storage medium for determining the ring-down time in a spectrometer system.
    상세보기
  6. Noll, Robert; Turner, Aaron; Majewski, Alexander, Apparatus, method and computer-readable storage medium for processing a signal in a spectrometer system.
    상세보기
  7. Borden, Peter G.; Li, Jiping; Madsen, Jon, Calibration as well as measurement on the same workpiece during fabrication.
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  8. Borden, Peter G.; Li, Jiping, Evaluating a geometric or material property of a multilayered structure.
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  9. Borden,Peter G; Li,Jiping, Evaluating a geometric or material property of a multilayered structure.
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  10. Borden,Peter G.; Li,Ji Ping, Evaluating a multi-layered structure for voids.
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  11. Borden,Peter G.; Li,Ji Ping, Evaluating a multi-layered structure for voids.
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  12. Borden,Peter G.; Li,Ji Ping, Evaluating a multi-layered structure for voids.
    상세보기
  13. Li, Jiping; Borden, Peter G., Evaluating sidewall coverage in a semiconductor wafer.
    상세보기
  14. Borden,Peter G.; Li,Jiping; Genio,Edgar, Evaluation of openings in a dielectric layer.
    상세보기
  15. Kaneoka, Takayoshi, Fault analysis apparatus and fault analysis method.
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  16. Li,Jiping; Borden,Peter G.; Genio,Edgar B., High throughput measurement of via defects in interconnects.
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  17. Borden, Peter G.; Li, Ji-Ping, Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough.
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  18. Borden, Peter G., Measurement of lateral diffusion of diffused layers.
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  19. Borden, Peter G.; Li, Jiping, Measuring a property of a layer in multilayered structure.
    상세보기
  20. Miller, Florent; Buard, Nadine; Lahoud, Imad; Carriere, Thierry; Heins, Patrick, Method and device for characterising sensitivity to energy interactions in an electronic component.
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  21. Stevens, Keith C., Method for monitoring defects in polysilicon gates in semiconductor devices responsive to illumination by incident light.
    상세보기
  22. Ghoshal Uttam Shyamalindu, Method for performing a high-temperature burn-in test on integrated circuits.
    상세보기
  23. Yoshida Eiji,JPX, Method of detecting defect of integrated circuit and apparatus thereof.
    상세보기
  24. Shabde Sunil N. ; Liu Yowjuang William ; Tsui Ting Yiu, Method of determining the doping concentration and defect profile across a surface of a processed semiconductor material.
    상세보기
  25. Kwon, Daewon, Methods and apparatus for determining optical constants of semiconductors and dielectrics with interband states.
    상세보기
  26. Steeples,Kenneth, Methods for integrated implant monitoring.
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  27. Majewski, Alexander; Noll, Robert; MacFarlane, Malcolm J., Multi-channel optical cell.
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  28. La Lumondiere, Stephen; Yeoh, Terence; Cardoza, David, Optimized illumination for imaging.
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  29. Nikawa Kiyoshi,JPX, Parasitic MIM structural spot analysis method for semiconductor device and parasitic MIM structure spot analysis method for silicon semiconductor device.
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  30. Noriyuki Toriyama JP; Toshiyuki Yagi JP; Tadao Nagatsuma JP, Probe for electro-optic sampling oscilloscope.
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  31. Suresh, Subra; Rosakis, Ares J., Real-time evaluation of stress fields and properties in line features formed on substrates.
    상세보기
  32. Kamieniecki, Emil; Ruzyllo, Jerzy, Real-time in-line testing of semiconductor wafers.
    상세보기
  33. Kamieniecki, Emil; Ruzyllo, Jerzy, Real-time in-line testing of semiconductor wafers.
    상세보기
  34. Steeples,Kenneth, Real-time in-line testing of semiconductor wafers.
    상세보기
  35. Tsidilkovski, Edward; Steeples, Kenneth, Real-time in-line testing of semiconductor wafers.
    상세보기
  36. La Lumondiere, Stephen; Yeoh, Terence; Leung, Martin Siu Wo; Ives, Neil A., Refraction assisted illumination for imaging.
    상세보기
  37. La Lumondiere, Stephen; Yeoh, Terence; Siu Wo Leung, Martin; Ives, Neil A.; Lotshaw, William T.; Moss, Steven C., Refraction assisted illumination for imaging.
    상세보기
  38. Wooten Chris ; Ehrichs Edward E., Semiconductor wafer analysis system and method.
    상세보기
  39. Majewski, Alexander; Abreu, Rene, System and method for magnitude and phase retrieval by path modulation.
    상세보기
  40. Clarysse,Trudo; Vandervorst,Wilfried, System and method for measuring properties of a semiconductor substrate in a non-destructive way.
    상세보기
  41. Abreu,Rene; Grotts,Jeffrey; Majewski,Alexander J., System and method for power ratio determination with common mode suppression through electric field differencing.
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  42. Majewski, Alexander; Abreu, Rene, System and method for signal extraction by path modulation.
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  43. Majewski, Alexander J.; Abreu, Rene, System and method for suppressing noise by frequency dither.
    상세보기
  44. Suresh, Subra; Rosakis, Ares J., Systems for measuring stresses in line features formed on substrates.
    상세보기
  45. Borden,Peter G.; Nijmeijer,Regina G.; Klemme,Beverly J., Use of coefficient of a power curve to evaluate a semiconductor wafer.
    상세보기

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