초록 ▼

A novel process for producing a semiconductor article is disclosed which comprises the steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substra

A novel process for producing a semiconductor article is disclosed which comprises the steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate and the nonporous semiconductor layer; bonding the first substrate to a second substrate to obtain a multiple layer structure with the nonporous semiconductor layer placed inside; separating the multiple layer structure at the ion implantation layer; and removing the ion implantation layer remaining on the separated second substrate.

대표청구항 ▼

[ What is claimed is:] [1.] A process for producing a semiconductor article comprising steps of preparing a first substrate comprised of a silicon substrate, an epitaxial semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrat

[ What is claimed is:] [1.] A process for producing a semiconductor article comprising steps of preparing a first substrate comprised of a silicon substrate, an epitaxial semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate, wherein said silicon substrate is not a porous region, and the epitaxial semiconductor layer, wherein said epitaxial semiconductor layer is not a porous region bonding the first substrate to a second substrate to obtain a multiple layer structure with the epitaxial semiconductor layer placed inside; and separating the multiple layer structure at the ion implantation layer.