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Systems and methods for controlling the temperature of a vapor deposition apparatus

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/46
출원번호 US-0746657 (1996-11-13)
발명자 / 주소
  • Frankel Jonathan
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Townsend & Townsend & Crew
인용정보 피인용 횟수 : 82  인용 특허 : 19

초록

The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce to

대표청구항

[ What is claimed is:] [1.] A method comprising:flowing one or more process gases into a substrate processing chamber to deposit a layer on a substrate;applying power to a heater for heating the heater to a predetermined target temperature, where an amount of power applied is a function of a tempera

이 특허에 인용된 특허 (19)

  1. Zhao Jun (Milpitas CA) Cho Tom (San Francisco CA) Dornfest Charles (Fremont CA) Wolff Stefan (Sunnyvale CA) Fairbairn Kevin (Saratoga CA) Guo Xin S (Mountain View CA) Schreiber Alex (Santa Clara CA) , CVD Processing chamber.
  2. Wang David N. (Cupertino CA) White John M. (Hayward CA) Law Kam S. (Union City CA) Leung Cissy (Union City CA) Umotoy Salvador P. (Pittsburg CA) Collins Kenneth S. (San Jose CA) Adamik John A. (San R, CVD of silicon oxide using TEOS decomposition and in-situ planarization process.
  3. Lei Lawrence C. (Cupertino CA) Perlov Ilya (Santa Clara CA) Littau Karl A. (Sunnyvale CA) Morrison Alan F. (San Jose CA) Chang Mei (Cupertino CA) Sinha Ashok K. (Palo Alto CA), Chemical vapor deposition chamber with a purge guide.
  4. Ushikoshi Ryusuke (Handa JPX) Nobori Kazuhiro (Haguri JPX) Niori Yusuke (Nagoya JPX) Umemoto Koichi (Toyota JPX) Kobayashi Hiromichi (Yokkaichi JPX) Honda Toshihiko (Nagoya JPX) Kawabata Kenji (Toyon, Corrosion-resistant member for chemical apparatus using halogen series corrosive gas.
  5. Provence John D. (Mesquite TX) Brown Frederick W. (Colleyville TX) Jones John I. (Plano TX), Dual detector system for determining endpoint of plasma etch process.
  6. Nenyei Zsolt (Blaustein-Herrlingen DEX) Knarr Thomas (Ulm DEX) Walk Heinrich (Allmendingen DEX), Method and apparatus for a rapid thermal processing of delicate components.
  7. Kakehi Yutaka (Hikari JPX) Nakazato Norio (Kudamatsu JPX) Fukushima Yoshimasa (Hikari JPX) Hiratsuka Kousai (Kudamatsu JPX) Shibata Fumio (Kudamatsu JPX) Yamamoto Noriaki (Kudamatsu JPX) Tsubone Tsun, Method and apparatus for controlling sample temperature.
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  12. Roy Pradip K. (Reading PA), Multilayering process for stress accommodation in deposited polysilicon.
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