초록 ▼

A semiconductor device and its method of fabrication are provided. The semiconductor device includes a substrate, a patterning stop region, an insulating overlayer, a container region within the insulating overlayer, a charge storage lamina or conductive layer over an interior surface of the contain

A semiconductor device and its method of fabrication are provided. The semiconductor device includes a substrate, a patterning stop region, an insulating overlayer, a container region within the insulating overlayer, a charge storage lamina or conductive layer over an interior surface of the container region; a contact region defined by the charge storage lamina or conductive layer; and an electrical contact in the contact region, wherein respective portions of the electrical contact and the charge storage lamina or conductive layer occupy collectively substantially all of the container region. A bit line terminal is coupled to the charge storage lamina through a switching structure. According to one embodiment of the present invention, a central patterning stop region and a pair of lateral patterning stop regions are provided such that the container region defines a container cross section having an upper container portion and a lower container portion, wherein the lower container portion is positioned between the lateral stop regions, and wherein the upper container portion is wider than the lower container portion.

대표청구항 ▼

[ What is claimed is:] [1.] A method of fabricating a storage container structure comprising the steps of:providing a substrate including a semiconductor structure;forming a patterning stop region;forming an insulating overlayer over a first surface of said substrate and over said patterning stop re

[ What is claimed is:] [1.] A method of fabricating a storage container structure comprising the steps of:providing a substrate including a semiconductor structure;forming a patterning stop region;forming an insulating overlayer over a first surface of said substrate and over said patterning stop region;patterning a container region within said insulating overlayer such that said container region defines a container cross section having container side walls, a container bottom wall, and a container interior bounded in part by said container side walls and said container bottom wall, and such that said container bottom wall is at least partially defined by a surface of said patterning stop region;layering a first conductive film over an interior surface of said container region;layering an intermediate insulating film over said first conductive film;layering a second conductive film over said intermediate insulating film such that said second conductive film includes a first film portion characterized by a first film thickness and a second film portion characterized by a second film thickness, such that said second film thickness is greater than said first film thickness, and such that said second film portion occupies at least a portion of said container interior;patterning a contact region in said second film portion of said second conductive film; andforming an electrical contact in said contact region such that respective portions of said electrical contact, said second conductive film, said intermediate insulating film, and said first conductive film occupy collectively at least a portion of said container region.