초록 ▼

An element isolator is formed in a silicon substrate. A gate oxide film and a gate electrode are formed overlying the silicon substrate. Subsequently, a four-step large-tilted-angle ion implant is performed in which ions of nitrogen are implanted at an angle of tilt of 25 degrees, to form an oxynitr

An element isolator is formed in a silicon substrate. A gate oxide film and a gate electrode are formed overlying the silicon substrate. Subsequently, a four-step large-tilted-angle ion implant is performed in which ions of nitrogen are implanted at an angle of tilt of 25 degrees, to form an oxynitride layer at each edge of the gate oxide film and to form a nitrogen diffusion layer in the silicon substrate. This is followed by formation of a lightly-doped source/drain region by means of impurity doping. A sidewall is formed on each side surface of the gate electrode, which is followed by formation of a heavily-doped source/drain region by impurity doping. The present invention provides an improved semiconductor device having high-performance, highly-reliable MOS field effect transistors and a method for fabricating the same.

대표청구항 ▼

[ The invention claimed is:] [1.] A method of fabricating a semiconductor device having a MIS-type field effect transistor, said semiconductor device fabrication method comprising the steps of:(a) a first step of forming on a semiconductor substrate an element isolator which encloses an active regio

[ The invention claimed is:] [1.] A method of fabricating a semiconductor device having a MIS-type field effect transistor, said semiconductor device fabrication method comprising the steps of:(a) a first step of forming on a semiconductor substrate an element isolator which encloses an active region;(b) a second step of depositing on said active region an oxide film and a conductor film;(c) a third step of patterning said oxide film and said conductor film to form a gate oxide film and a gate electrode for said MIS-type field effect transistor;(d) a fourth step of forming a shallow nitrogen diffusion layer and an oxynitride layer by doping nitrogen into said active region at at least a portion thereof where a drain region is to be formed and into at least one of edges of said gate oxide film located on a drain formation side; and(e) a fifth step of forming a lightly-doped source region and a lightly-doped drain region for said MIS-type field effect transistor by doping an impurity of a first conductivity type into areas of said active region located on opposite sides of said gate electrode, such that at least said lightly-doped drain region extends under said shallow nitrogen diffusion layer.