초록 ▼

A method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad in which a planarizing solution is dispensed onto the fixed-abrasive polishing pad. The planarizing solution is preferably an abrasive-free planarizing solution that oxidizes a surface layer on the substr

A method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad in which a planarizing solution is dispensed onto the fixed-abrasive polishing pad. The planarizing solution is preferably an abrasive-free planarizing solution that oxidizes a surface layer on the substrate without passing the surface layer into solution, and the fixed-abrasive pad has a substantially uniform distribution of abrasive particles fixedly bonded to a suspension medium. The surface layer of the substrate is then pressed against the fixed-abrasive pad in the presence of planarizing solution, and at least one of the fixed-abrasive pad or the substrate moves relative to the other to remove material from the surface of the substrate. In operation, the planarizing solution forms a rough, scabrous layer of non-soluble oxides on the surface layer that are readily removed by the abrasive surface of the polishing pad. In one embodiment of the invention, the pH of the planarizing solution is controlled to oxidize the material of the surface layer without passing it into solution.

대표청구항 ▼

[ I claim:] [1.] A chemical-mechanical planarization method for removing material from a metal surface of a microelectronic substrate, comprising:providing a substantially abrasive-free planarizing solution having a chemical that oxidizes the material at the surface without passing the material into

[ I claim:] [1.] A chemical-mechanical planarization method for removing material from a metal surface of a microelectronic substrate, comprising:providing a substantially abrasive-free planarizing solution having a chemical that oxidizes the material at the surface without passing the material into solution by maintaining a pH of the planarizing solution not greater than 5.0;providing a fixed-abrasive pad having abrasive particles dispersed in a suspension medium, the fixed-abrasive particles being fixedly attached to the suspension medium;dispensing the planarizing solution onto the fixed-abrasive pad;pressing the surface of the substrate against the fixed-abrasive pad in the presence of the planarizing solution, wherein the planarizing solution forms non-soluble oxides on the surface of the substrate; andmoving at least one of the substrate and the fixed-abrasive pad relative to the other, the fixed-abrasive pad removing the non-soluble oxides from the substrate.