초록 ▼

A method for forming an oxynitride gate dielectric layer (202, 204) begins by providing a semiconductor substrate (200). This semiconductor substrate is cleaned via process steps (10-28). Optional nitridation and oxidation are performed via steps (50 and 60) to form a thin interface layer (202). Bul

A method for forming an oxynitride gate dielectric layer (202, 204) begins by providing a semiconductor substrate (200). This semiconductor substrate is cleaned via process steps (10-28). Optional nitridation and oxidation are performed via steps (50 and 60) to form a thin interface layer (202). Bulk oxynitride gate deposition occurs via a step (70) to form a bulk gate dielectric material (204) having custom tailored oxygen and nitrogen profile and concentration. A step (10) is then utilized to in situ cap this bulk dielectric layer (204) with a polysilicon or amorphous silicon layer (208). The layer (208) ensures that the custom tailors oxygen and nitrogen profile and concentration of the underlying gate dielectric (204) is preserved even in the presence of subsequent wafer exposure to oxygen ambients.

대표청구항 ▼

[ What is claimed is:] [1.] A method for forming a semiconductor device, the method comprising:placing a semiconductor substrate into a first chamber;forming a dielectric overlying a semiconductor substrate, the dielectric includes a first layer formed within the first chamber, wherein:during the fo

[ What is claimed is:] [1.] A method for forming a semiconductor device, the method comprising:placing a semiconductor substrate into a first chamber;forming a dielectric overlying a semiconductor substrate, the dielectric includes a first layer formed within the first chamber, wherein:during the formation of the first layer, an oxygen-containing gas and a nitrogen-containing gas flow at a first oxygen-containing gas-to-nitrogen-containing gas ratio at a first time;during the formation of the first layer, the oxygen-containing gas and the nitrogen-containing gas flow at a second oxygen-containing gas-to-nitrogen-containing gas ratio at a second time; andthe first oxygen-containing gas-to-nitrogen-containing gas ratio is higher than the second oxygen-containing gas-to-nitrogen-containing gas ratio.