$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Bellows driver slot valve 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • F16K-025/00
출원번호 US-0892505 (1997-07-14)
발명자 / 주소
  • Brenes Arthur
대리인 / 주소
    Flehr Hohbach Test Albritton & Herbert LLP
인용정보 피인용 횟수 : 118  인용 특허 : 5

초록

A slot valve assembly (10) including a housing (11) having a central opening (19), a valve plate (32), a strongback (20) for carrying the valve plate, a pair of actuators (34, 36) for raising and lowering the strongback to position the valve plate over opening (19), and a second set of actuators (24

대표청구항

[ What is claimed is:] [10.] A control system for moving a valve gate longitudinally between first and second holder positions into and out of a flow path and transversely between first and second gate positions into and out of seating engagement with a valve seat, for sealing off the flow path, the

이 특허에 인용된 특허 (5)

  1. Onnen James H. (Louisville KY), Damper assembly.
  2. Tiefenthaler Edelbert (Elgg CHX), Plate valve.
  3. Bailey Stuart L. (San Antonio TX), Self-aligning gate valve.
  4. de Fries Jan R. (Wallisellen CHX), Spool valve having improved sealing characteristics.
  5. Frisch ; Paul P., Valve construction.

이 특허를 인용한 특허 (118)

  1. Ootsuka, Fumio, 3D stacked multilayer semiconductor memory using doped select transistor channel.
  2. Beaulieu, Martin; Van Den Boom, Dirk J., Allele-specific sequence variation analysis.
  3. Oosterlaken, Theodorus; de Ridder, Chris; Jdira, Lucian, Apparatus and method for manufacturing a semiconductor device.
  4. Kamiya, Tatsuo, Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum.
  5. Yokomizo,Kenji, Apparatus and method of securing a workpiece during high-pressure processing.
  6. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.
  7. Köster, Hubert; Yip, Ping; Steadman, Jhobe; Reuter, Dirk; MacDonald, Richard, Automated process line.
  8. Ehrich, Mathias; Van Den Boom, Dirk Johannes, Base specific cleavage of methylation-specific amplification products in combination with mass analysis.
  9. den Hartog Besselink, Edwin; Garssen, Adriaan; Dirkmaat, Marco, Cassette holder assembly for a substrate cassette and holding member for use in such assembly.
  10. Zaitsu, Masaru; Fukazawa, Atsuki; Fukuda, Hideaki, Continuous process incorporating atomic layer etching.
  11. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
  12. K?ster,Hubert; Braun,Andreas; van den Boom,Dirk; Jurinke,Christian; Ruppert,Andreas; Hillenkamp,Franz; Little,Daniel P., DNA diagnostics based on mass spectrometry.
  13. K��ster,Hubert; Braun,Andreas; van den Boom,Dirk; Jurinke,Christian; Ruppert,Andreas; Hillenkamp,Franz, DNA diagnostics based on mass spectrometry.
  14. Raisanen, Petri; Shero, Eric; Haukka, Suvi; Milligan, Robert Brennan; Givens, Michael Eugene, Deposition of metal borides.
  15. Zhu, Chiyu; Shrestha, Kiran; Haukka, Suvi, Deposition of metal borides.
  16. Milligan, Robert Brennan, Formation of boron-doped titanium metal films with high work function.
  17. van den Boom, Dirk; Boecker, Sebastian, Fragmentation-based methods and systems for sequence variation detection and discovery.
  18. Hawkins, Mark; Halleck, Bradley Leonard; Kirschenheiter, Tom; Hossa, Benjamin; Pottebaum, Clay; Miskys, Claudio, Gas distribution system, reactor including the system, and methods of using the same.
  19. Sauer Andreas,DEX ; Schuhmacher Manfred,DEX ; Kunz Johannes,DEX ; Joos Gerhard,DEX, Gate valve.
  20. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.
  21. Brenes,Arthur J.; Takayama,Yoshi; Duncan,John, Gate valve having service position.
  22. Yang, Li-Chuan, Gate valve with linkage structure.
  23. Jones, William D., High pressure fourier transform infrared cell.
  24. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
  25. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  26. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  27. Contin, Jose L.; Ulea, Neli, High-vacuum valve with retractable valve plate to eliminate abrasion.
  28. Blahnik, Jeff, Inflatable slit/gate valve.
  29. Jeff Blahnik, Inflatable slit/gate valve.
  30. Braun,Andreas; Cantor,Charles R.; Kammerer,Stefan M.; Taylor,Susan; Burns Hamuro,Lora; Cook,Charles; Olson,Gary; Self,Christopher, Kinase anchor protein muteins, peptides thereof and related documents.
  31. Shugrue, John; Moen, Ron, Lockout tagout for semiconductor vacuum valve.
  32. Köster, Hubert, Mass spectrometric methods for detecting mutations in a target nucleic acid.
  33. Jung, Sung-Hoon, Metal oxide protective layer for a semiconductor device.
  34. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.
  35. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.
  36. Pore, Viljami, Method and apparatus for filling a gap.
  37. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Aerde, Steven R. A.; Haukka, Suvi; Fukuzawa, Atsuki; Fukuda, Hideaki, Method and apparatus for filling a gap.
  38. Pore, Viljami; Knaepen, Werner; Jongbloed, Bert; Pierreux, Dieter; Van Der Star, Gido; Suzuki, Toshiya, Method and apparatus for filling a gap.
  39. Brenes, Arthur J., Method and apparatus for locking a valve.
  40. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.
  41. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.
  42. Tolle, John; Hill, Eric; Winkler, Jereld Lee, Method and system for in situ formation of gas-phase compounds.
  43. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.
  44. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
  45. Jung, Sung-Hoon; Raisanen, Petri; Liu, Eric Jen Cheng; Schmotzer, Mike, Method and system to reduce outgassing in a reaction chamber.
  46. Winkler, Jereld Lee, Method and systems for in-situ formation of intermediate reactive species.
  47. Suemori, Hidemi, Method for depositing dielectric film in trenches by PEALD.
  48. Kang, DongSeok, Method for depositing thin film.
  49. Takamure, Noboru; Okabe, Tatsuhiro, Method for forming Ti-containing film by PEALD using TDMAT or TDEAT.
  50. Shiba, Eiichiro, Method for forming aluminum nitride-based film by PEALD.
  51. Fukazawa, Atsuki, Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition.
  52. Fukazawa, Atsuki; Fukuda, Hideaki; Takamure, Noboru; Zaitsu, Masaru, Method for forming dielectric film in trenches by PEALD using H-containing gas.
  53. Kimura, Yosuke; de Roest, David, Method for forming film having low resistance and shallow junction depth.
  54. Ishikawa, Dai; Fukazawa, Atsuki, Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches.
  55. Namba, Kunitoshi, Method for forming silicon oxide cap layer for solid state diffusion process.
  56. Shiba, Eiichiro, Method for performing uniform processing in gas system-sharing multiple reaction chambers.
  57. Yamagishi, Takayuki; Suwada, Masaei; Tanaka, Hiroyuki, Method for positioning wafers in multiple wafer transport.
  58. Kato, Richika; Nakano, Ryu, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  59. Kato, Richika; Okuro, Seiji; Namba, Kunitoshi; Nonaka, Yuya; Nakano, Akinori, Method for protecting layer by forming hydrocarbon-based extremely thin film.
  60. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
  61. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
  62. Zaitsu, Masaru, Method of atomic layer etching using functional group-containing fluorocarbon.
  63. Zaitsu, Masaru; Kobayashi, Nobuyoshi; Kobayashi, Akiko; Hori, Masaru; Kondo, Hiroki; Tsutsumi, Takayoshi, Method of cyclic dry etching using etchant film.
  64. Knaepen, Werner; Maes, Jan Willem; Jongbloed, Bert; Kachel, Krzysztof Kamil; Pierreux, Dieter; De Roest, David Kurt, Method of forming a structure on a substrate.
  65. Lee, Choong Man; Yoo, Yong Min; Kim, Young Jae; Chun, Seung Ju; Kim, Sun Ja, Method of forming metal interconnection and method of fabricating semiconductor apparatus using the method.
  66. Chun, Seung Ju; Yoo, Yong Min; Choi, Jong Wan; Kim, Young Jae; Kim, Sun Ja; Lim, Wan Gyu; Min, Yoon Ki; Lee, Hae Jin; Yoo, Tae Hee, Method of processing a substrate and a device manufactured by using the method.
  67. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
  68. Kurita,Shinichi; Lee,Ke Ling; Blonigan,Wendell T, Methods and apparatus for sealing an opening of a processing chamber.
  69. van den Boom, Dirk Johannes; Ehrich, Mathias, Methods and compositions for phenotype identification based on nucleic acid methylation.
  70. Kohen, David; Profijt, Harald Benjamin, Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures.
  71. Braun,Andreas; Van Den Boom,Dirk; Jurinke,Christian, Methods for detecting methylated nucleotides.
  72. Raisanen, Petri; Givens, Michael Eugene, Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures.
  73. Braun, Andreas; Koster, Hubert; Van den Boom, Dirk; Yip, Ping; Rodi, Charles; He, Liyan; Chiu, Norman; Jurinke, Christiane, Methods for generating databases and databases for identifying polymorphic genetic markers.
  74. Braun, Andreas; Köster, Hubert; Van Den Boom, Dirk Johannes; Yip, Ping; Rodi, Charles; He, Liyan; Chiu, Norman; Jurinke, Christian, Methods for generating databases and databases for identifying polymorphic genetic markers.
  75. Köster, Hubert; Braun, Andreas; Van Den Boom, Dirk; Ping, Yip; Rodi, Charlie; He, Liyan; Chiu, Norman; Jurinke, Christian, Methods for generating databases and databases for identifying polymorphic genetic markers.
  76. Margetis, Joe; Tolle, John, Methods of forming highly p-type doped germanium tin films and structures and devices including the films.
  77. Margetis, Joe; Tolle, John, Methods of forming silicon germanium tin films and structures and devices including the films.
  78. Zhu, Chiyu; Asikainen, Timo; Milligan, Robert Brennan, NbMC layers.
  79. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
  80. Iwabuchi,Toshiaki, Non-rubbing gate valve for semiconductor fabrication apparatus.
  81. Brenes,Arthur J., Pendulum gate valve.
  82. Morice, Peter G., Pneumatic actuation system and method.
  83. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
  84. Pettinger, Fred; White, Carl; Marquardt, Dave; Ibrani, Sokol; Shero, Eric; Dunn, Todd; Fondurulia, Kyle; Halpin, Mike, Process feed management for semiconductor substrate processing.
  85. Wuester,Christopher D., Process flow thermocouple.
  86. Margetis, Joe; Tolle, John; Bartlett, Gregory; Bhargava, Nupur, Process for forming a film on a substrate using multi-port injection assemblies.
  87. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  88. Alokozai, Fred; Milligan, Robert Brennan, Process gas management for an inductively-coupled plasma deposition reactor.
  89. Winkler, Jereld Lee, Pulsed remote plasma method and system.
  90. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  91. Williams, Dick S.; Luter, William L., Retractable and expandable water cooled valve gate useful for sealing a hot processing chamber.
  92. Zhu, Chiyu, Selective film deposition method to form air gaps.
  93. Kim, Young Jae; Choi, Seung Woo; Yoo, Yong Min, Semiconductor device and manufacturing method thereof.
  94. Shero, Eric; Verghese, Mohith E.; White, Carl L.; Terhorst, Herbert; Maurice, Dan, Semiconductor processing reactor and components thereof.
  95. Milligan, Robert Brennan; Alokozai, Fred, Semiconductor reaction chamber with plasma capabilities.
  96. Arai, Izumi, Single-and dual-chamber module-attachable wafer-handling chamber.
  97. Blahnik,Jeff; Kraus,Joe; Rice,Mike, Single-sided inflatable vertical slit valve.
  98. Matsumoto, Takayuki; Kurita, Shinichi, Slit valve control.
  99. Xie, Qi; de Roest, David; Woodruff, Jacob; Givens, Michael Eugene; Maes, Jan Willem; Blanquart, Timothee, Source/drain performance through conformal solid state doping.
  100. Weeks, Keith Doran, Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same.
  101. Tolle, John, Structures and devices including germanium-tin films and methods of forming same.
  102. Jeong, Sang Jin; Han, Jeung Hoon; Choi, Young Seok; Park, Ju Hyuk, Susceptor for semiconductor substrate processing apparatus.
  103. Tang, Fu; Givens, Michael Eugene; Xie, Qi; Raisanen, Petri, System and method for gas-phase sulfur passivation of a semiconductor surface.
  104. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
  105. Lawson, Keith R.; Givens, Michael E., Systems and methods for dynamic semiconductor process scheduling.
  106. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
  107. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
  108. Cantor, Charles R.; Siddiqi, Fouad A., Use of nucleotide analogs in the analysis of oligonucleotide mixtures and in highly multiplexed nucleic acid sequencing.
  109. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
  110. Rudolf Wagner CH, Vacuum system with a vacuum plate valve.
  111. Maerk, Andreas, Vacuum valve.
  112. Schoen, Mathias, Vacuum valve.
  113. Schoen, Mathias; Henry, Didier, Vacuum valve.
  114. Ehrne, Florian; Bachmann, Christof; Wozasek, Matthias, Valve.
  115. Blecha, Thomas; Nesensohn, Markus, Valve, in particular a vacuum valve.
  116. Coomer, Stephen Dale, Variable adjustment for precise matching of multiple chamber cavity housings.
  117. Shugrue, John Kevin, Variable conductance gas distribution apparatus and method.
  118. Schmotzer, Michael; Whaley, Shawn, Variable gap hard stop design.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로