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Method of forming titanium silicide and titanium by chemical vapor deposition 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/44
출원번호 US-0915986 (1997-08-21)
발명자 / 주소
  • Doan Trung T.
  • Sandhu Gurtej Singh
  • Prall Kirk
  • Sharan Sujit
출원인 / 주소
  • Micron Technology, Inc.
대리인 / 주소
    Schwegman, Lundberg, Woessner & Kluth P.A.
인용정보 피인용 횟수 : 41  인용 특허 : 52

초록 ▼

A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon t

대표청구항 ▼

[ What is claimed is:] [1.] A method of forming a contact, comprising:cleaning a contact hole;combining a titanium precursor and a silicon precursor in the presence of hydrogen (H.sub.2); andforming titanium silicide on an exposed silicon base layer by chemical vapor deposition (CVD);forming a barri

이 특허에 인용된 특허 (52)

  1. Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ) LeBlanc Rene E. (East Haven CT), Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating suscept.
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  2. Westmoreland Donald (Boise ID), CVD method for semiconductor manufacture using rapid thermal pulses.
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  3. Sandhu Gurtej S. (Boise ID) Fazan Pierre C. (Boise ID), Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for fo.
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  4. Wanner Brenda D. (Boise ID), Chemical vapor deposition of titanium and titanium containing films using bis (2,4-dimethylpentadienyl) titanium as a pr.
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  5. Doan Trung T. (Boise ID) Sandhu Gurtej S. (Boise ID), Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers.
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  6. Doan Trung T. (Boise ID) Sandhu Gurtej S. (Boise ID), Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers.
    상세보기
  7. Doan Trung T. (Boise ID) Sandhu Gurtej S. (Boise ID), Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers.
    상세보기
  8. Sandhu Gurtej S. (Boise ID) Yu Chang (Boise ID) Doan Trung T. (Boise ID) Tuttle Mark E. (Boise ID), Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planariza.
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  9. Grief Malcolm K. (2451 E. Woods End Ct. Boise ID 83706) Doan Trung (1574 Shenandoah Dr. Boise ID 83712), Electrical contact with diffusion barrier.
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  10. Tuttle Mark E. (Boise ID), Electroplating process for enhancing the conformality of titanium and titanium nitride films in the manufacture of integ.
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  11. Okumura Katsuya (Yokohama JPX) Moriya Takahiko (Yokohama JPX) Miyazaki Shinji (Yokohama JPX) Kumagai Yoshio (Kofu JPX) Tanaka Susumu (Hachioji JPX), Film forming method and film forming device.
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  12. Westmoreland Donald L. (Boise ID) Sandhu Gurtej S. (Boise ID), High efficiency method for performing a chemical vapor deposition utilizing a nonvolatile precursor.
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  13. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID) Cathey David A. (Boise ID), Highly resistive structures for integrated circuits and method of manufacturing the same.
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  14. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID), LPCVD process for depositing titanium films for semiconductor devices.
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  15. Sandhu Gurtej S. (Boise ID), LPCVD process for depositing titanium nitride (tin) films and silicon substrates produced thereby.
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  24. Ameen Michael S. ; Hillman Joseph T., Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the.
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  25. Kauffman Ralph E. (Boise ID) Prucha Michael J. (Bigfork MT) Beck James (Boise ID) Thakur Randhir P. S. (Boise ID) Martin Annette L. (Boise ID), Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films.
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  26. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID), Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and o.
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  27. Akahori Takashi (Hyogo JPX), Method for forming a thin film.
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  28. Sandhu Gurtej S. (Boise ID) Fazan Pierre C. (Boise ID), Method for forming capacitor compatible with high dielectric constant materials having a low contact resistance layer.
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  29. Yu Chang (Boise ID) Doan Trung T. (Boise ID) Sandhu Gurtej S. (Boise ID), Method for improving step coverage of a metallization layer on an integrated circuit by use of a high melting point meta.
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  30. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID) Meikle Scott G. (Boise ID), Method of depositing high density titanium nitride films on semiconductor wafers.
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  31. Sandhu Gurtej S. (Boise ID), Method of depositing titanium carbonitride films on semiconductor wafers.
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  32. Sharan Sujit ; Sandhu Gurtej S., Method of forming an electrical contact to a silicon substrate.
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  33. Sandhu Gurtej S. (Boise ID) Park Donwon (Boise ID) Lowrey Tyler A. (Boise ID), Method of forming local etch stop landing pads for simultaneous, self-aligned dry etching of contact vias with various d.
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  34. Umemura Shizuo (Ibaraki JPX), Method of forming ultrafine patterns.
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  35. Endo Yoshihiro (Nara JPX) Yamashita Takuo (Tenri JPX) Ogawa Ikuo (Yamatokoriyama JPX), Method of manufacturing thin-film electroluminescent display panel.
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  36. Sandhu, Gurtej S.; Doan, Trung T., Method of providing a silicon film having a roughened outer surface.
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  37. Sandhu Gurtej S. (Boise ID), Method to deposit highly conformal CVD films.
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  38. Doan Trung T. (Boise ID) Tuttle Mark E. (Boise ID), Method to form a low resistant bond pad interconnect.
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  39. Doan Trung T. (Boise) Sandhu Gurtej S. (Boise ID), Methods for inhibiting outgrowth of silicide in self-aligned silicide process.
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  40. Kaito Takashi (Tokyo JPX) Adachi Tatsuya (Tokyo JPX), Process for forming metallic patterned film.
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  41. Hu Yongjun (Boise ID), Process for manufacturing a large grain tungsten nitride film and process for manufacturing a lightly nitrided titanium.
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  42. Gladfelter Wayne L. (St. Paul MN) Boyd David C. (Minneapolis MN), Process for the chemical vapor deposition of aluminum.
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  43. Vaartstra Brian A. (Nampa ID) Lai Wing-Cheong G. (Boise ID), Process for titanium nitride deposition using five-and six-coordinate titanium complexes.
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  44. Stefano James J. (Boise ID) Lee Ruojia R. (Boise ID), Protection of a refractory metal silicide during high-temperature processing using a dual-layer cap of silicon dioxide a.
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  45. Sandhu Gurtej S. (Boise ID) Doan Trung T. (Boise ID), Pulsed plasma enhanced CVD of metal silicide conductive films such as TiSi2.
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  46. Egermeier John C. (Vienna VA) Ellzey Janet (Vienna VA) Walker Delroy (Mt. Rainier MD), Reaction chamber having non-clouded window.
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  47. Westmoreland Donald L. (Boise ID), Reductive elimination chemical vapor deposition processes utilizing organometallic precursor compounds in semiconductor.
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  48. Honeycutt Jeffrey (Boise ID) Sharan Sujit (Boise ID), Sacrificial CVD germanium layer for formation of high aspect ratio submicron VLSI contacts.
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  49. Kinoshita Yasushi (Tokyo JPX), Semiconductor integrated circuit having MOS memory and bipolar peripherals.
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  50. Yu Chang (Boise ID) Doan Trung T. (Boise ID) Sandhu Gurtej S. (Boise ID), Semiconductor metallization method.
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  51. Lee Roger R. (Boise ID) Gonzalez Fernando (Boise ID) Lowrey Tyler A. (Boise ID), Sidewall silicidation for improved reliability and conductivity.
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  52. Kaim Robert (762 Washington St. Brookline MA 02146) Vanderpot John W. (29 Pearl Rd. Boxford MA 01921), Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides.
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이 특허를 인용한 특허 (41)

  1. Gurtej Sandhu ; Garo J. Derderian, ALD method to improve surface coverage.
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  2. Sandhu, Gurtej; Derderian, Garo J., ALD method to improve surface coverage.
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  3. Gurtej Singh Sandhu ; Donald L. Westmoreland, Apparatus having a titanium alloy layer.
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  4. Derraa, Ammar; Sharan, Sujit; Castrovillo, Paul, Boron-doped titanium nitride layer for high aspect ratio semiconductor devices.
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  5. Ku Tzu-Kun,TWX, CVD titanium silicide for contact hole plugs.
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  6. Derraa, Ammar; Basceri, Cem; Vasilyeva, Irina; Campbell, Philip H.; Sandhu, Gurtej S., Chemical vapor deposition method of forming a material over at least two substrates.
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  7. Sandhu Gurtej Singh ; Westmoreland Donald L., Chemical vapor deposition of titanium.
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  8. Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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  9. Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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  10. Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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  11. Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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  12. Sandhu, Gurtej Singh; Westmoreland, Donald L., Chemical vapor deposition of titanium.
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  13. Sharan, Sujit; Rhodes, Howard E.; Ireland, Philip J.; Sandhu, Gurtej S., Chemistry for chemical vapor deposition of titanium containing films.
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  14. Sharan,Sujit; Rhodes,Howard E.; Ireland,Philip J.; Sandhu,Gurtej S., Chemistry for chemical vapor deposition of titanium containing films.
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  15. Sujit Sharan ; Howard E. Rhodes ; Philip J. Ireland ; Gurtej S. Sandhu, Chemistry for chemical vapor deposition of titanium containing films.
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  16. Derraa, Ammar; Sharan, Sujit; Castrovillo, Paul, Diffusion barrier layer for semiconductor wafer fabrication.
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  17. Derraa, Ammar; Sharan, Sujit; Castrovillo, Paul, Diffusion barrier layer for semiconductor wafer fabrication.
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  18. Bassom, Neil J.; Mai, Tung, Fabrication of high resistivity structures using focused ion beams.
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  19. Sandhu, Gurtej; Derderian, Garo J., Film composition.
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  20. Sandhu,Gurtej Singh; Westmoreland,Donald L., Memory device with chemical vapor deposition of titanium for titanium silicide contacts.
    상세보기
  21. Derraa, Ammar, Method of forming a conductive contact.
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  22. Derraa,Ammar, Method of forming a conductive contact.
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  23. Sandhu Gurtej S., Method of forming a metal silicide comprising contact over a substrate.
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  24. Lee, Hyun-Suk; Kim, Hyun-Young; Moon, Kwang-Jin, Method of forming metal layer used in the fabrication of semiconductor device.
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  25. Lee,Hyun Suk; Kim,Hyun Young; Moon,Kwang Jin, Method of forming metal layer used in the fabrication of semiconductor device.
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  26. In Haeng Lee KR, Method of manufacturing a semiconductor device.
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  27. Toth, Milos; Lobo, Charlene; Randolph, Steven; Chandler, Clive, Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition.
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  28. Doan Trung T. ; Sandhu Gurtej Singh ; Prall Kirk ; Sharan Sujit, Methods of forming a contact having titanium formed by chemical vapor deposition.
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  29. Doan Trung T. ; Sandhu Gurtej Singh ; Prall Kirk ; Sharan Sujit, Methods of forming a contact having titanium silicide formed by chemical vapor deposition.
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  30. Basceri,Cem; Vasilyeva,Irina; Derraa,Ammar; Campbell,Philip H.; Sandhu,Gurtej S., Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer.
    상세보기
  31. Basceri, Cem; Vasilyeva, Irina; Derraa, Ammar; Campbell, Philip H.; Sandhu, Gurtej S., Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers.
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  32. Basceri, Cem; Vasilyeva, Irina; Derraa, Ammar; Campbell, Philip H.; Sandhu, Gurtej S., Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers.
    상세보기
  33. Basceri,Cem; Vasilyeva,Irina; Derraa,Ammar; Campbell,Philip H.; Sandhu,Gurtej S., Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers.
    상세보기
  34. Basceri,Cem; Vasilyeva,Irina; Derraa,Ammar; Campbell,Philip H.; Sandhu,Gurtej S., Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers.
    상세보기
  35. Basceri, Cem; Vasilyeva, Irina; Derraa, Ammar; Campbell, Philip H.; Sandhu, Gurtej S., Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates.
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  36. Kikuchi, Hideaki; Nagai, Kouichi, Semiconductor device.
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  37. Sandhu, Gurtej; Derderian, Garo J., Semiconductor device with novel film composition.
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  38. Sandhu, Gurtej; Derderian, Garo J., Semiconductor device with novel film composition.
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  39. Anthony J. Konecni ; Srikanth Bolnedi, System and method of forming a tungsten plug.
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  40. Derraa, Ammar; Sharan, Sujit; Castrovillo, Paul, Titanium boronitride layer for high aspect ratio semiconductor devices.
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  41. Tai Kaori,JPX, Titanium silicide layer formation method.
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