초록 ▼

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem de

An N-I-P type photovoltaic device includes a multi-layered body of N-doped semiconductor material which has an amorphous, N doped layer in contact with the amorphous body of intrinsic semiconductor material, and a microcrystalline, N doped layer overlying the amorphous, N doped material. A tandem device comprising stacked N-I-P cells may further include a second amorphous, N doped layer interposed between the microcrystalline, N doped layer and a microcrystalline P doped layer. Photovoltaic devices thus configured manifest improved performance, particularly when configured as tandem devices.

대표청구항 ▼

[ We claim:] [1.] A tandem photovoltaic device of the type comprising:a first and a second N-I-P type photovoltaic cell stacked in an optical and electrical series relationship, each cell including a body of substantially intrinsic semiconductor material interposed between a body of N doped semicond

[ We claim:] [1.] A tandem photovoltaic device of the type comprising:a first and a second N-I-P type photovoltaic cell stacked in an optical and electrical series relationship, each cell including a body of substantially intrinsic semiconductor material interposed between a body of N doped semiconductor material and a body of P doped semiconductor material;wherein at least one of said first and second cells includes a multi-layered N doped body comprising a first layer of amorphous, N doped semiconductor material disposed in overlying contact with the intrinsic body of said cell, and a layer of microcrystalline, N doped semiconductor material disposed upon said first layer of amorphous, N doped semiconductor material, and separated from said substantially intrinsic body thereby.