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특허 상세정보

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Semiconductor light emitting diode having a capacitor

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-033/00   
미국특허분류(USC) 257/081 ; 257/084 ; 257/099
출원번호 US-0925790 (1997-09-09)
우선권정보 JP-0238070 (1996-09-09)
발명자 / 주소
  • Ishikawa Masayuki,JPX
  • Nitta Koichi,JPX
출원인 / 주소
  • Kabushiki Kaisha Toshiba, JPX
대리인 / 주소
    Banner & Witcoff, Ltd.
인용정보 피인용 횟수 : 62  인용 특허 : 1
초록

A semiconductor light emitting diode having a high surge resistance and high reliability has a structure which includes an additional capacitor formed between an anode and a cathode of the light emitting element. Specifically, in an LED having an n-type GaN semiconductor layer, a GaN-based active layer and a p-type GaN-based semiconductor layer on a sapphire substrate, the cathode is formed on the n-type GaN semiconductor layer and an electrode wiring extends from the top of the p-type GaN-based semiconductor layer to form a capacitor.

대표
청구항
▼

[ What is claimed is:] [1.] A compound semiconductor light emitting device comprising:a compound semiconductor light emitting element having a first contact area and a second contact area;a first electrode coupled to said first contact area;a second electrode coupled to said second contact area; and an insulating layer for separating said first and said second electrodes in a region in which one of said first or said second electrodes overlaps the other of said first or said second electrodes, wherein a capacitor element includes said insulating layer, s...

인용문헌 (1)

  1. Uchida Satoshi (Kyoto JPX) Takuma Hiroaki (Kyoto JPX) Ikawa Katsuhiko (Kyoto JPX), Sub-mount type device for emitting light.

이 특허를 인용한 특허 (62)

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