초록 ▼

A semiconductor light emitting diode having a high surge resistance and high reliability has a structure which includes an additional capacitor formed between an anode and a cathode of the light emitting element. Specifically, in an LED having an n-type GaN semiconductor layer, a GaN-based active la

A semiconductor light emitting diode having a high surge resistance and high reliability has a structure which includes an additional capacitor formed between an anode and a cathode of the light emitting element. Specifically, in an LED having an n-type GaN semiconductor layer, a GaN-based active layer and a p-type GaN-based semiconductor layer on a sapphire substrate, the cathode is formed on the n-type GaN semiconductor layer and an electrode wiring extends from the top of the p-type GaN-based semiconductor layer to form a capacitor.

대표청구항 ▼

[ What is claimed is:] [1.] A compound semiconductor light emitting device comprising:a compound semiconductor light emitting element having a first contact area and a second contact area;a first electrode coupled to said first contact area;a second electrode coupled to said second contact area; and

[ What is claimed is:] [1.] A compound semiconductor light emitting device comprising:a compound semiconductor light emitting element having a first contact area and a second contact area;a first electrode coupled to said first contact area;a second electrode coupled to said second contact area; and an insulating layer for separating said first and said second electrodes in a region in which one of said first or said second electrodes overlaps the other of said first or said second electrodes, wherein a capacitor element includes said insulating layer, said first electrode and said second electrode.