초록 ▼

Ferroelectric PbZr.sub.x T.sub.1-x O.sub.3 (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+Ti)

Ferroelectric PbZr.sub.x T.sub.1-x O.sub.3 (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+Ti) ratio of 1.2 and depositing at 350.degree. C., followed by thermal treatment at 620.degree. C. for 30 min is disclosed. The structural and electrical properties of the PZT layer were further improved by a method of fabricating a novel multi-layer structure which combined the PZT thin film with nanolayers of BaTiO.sub.3. The method and device of the present invention provided reduced leakage current density while maintaining high relative effective dielectric constants.

대표청구항 ▼

[ We claim:] [1.] A capacitor comprising a multilayer structure between two electrodes, the multilayer structure comprising:a first layer and a second layer of a first dielectric material having a first dielectric constant;the first layer having an internal structure affecting formation of a crystal

[ We claim:] [1.] A capacitor comprising a multilayer structure between two electrodes, the multilayer structure comprising:a first layer and a second layer of a first dielectric material having a first dielectric constant;the first layer having an internal structure affecting formation of a crystalline structure of the second layer;the crystalline structure of the second layer affecting formation of a perovskite crystalline structure of a ferroelectric layer deposited on the second layer;the ferroelectric layer having a second dielectric constant higher than the first dielectric constant; andan amorphous layer serving to limit leakage current in the capacitor by terminating grain boundaries in the ferroelectric layer.