Method of producing high surface area metal oxynitrides as substrates in electrical energy storage
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B05D-005/12
출원번호
US-0761837
(1996-12-09)
발명자
/ 주소
Deng Charles Z.
Tsai Keh Chi
Ghantous Dania
출원인 / 주소
Pinnacle Research Institute, Inc.
대리인 / 주소
Peters, Verny, Jones & Biksa, LLP
인용정보
피인용 횟수 :
96인용 특허 :
53
초록▼
The present invention concerns a process to produce a high surface area niobium oxynitride, tantalum oxynitride, vanadium oxynitride, zirconium oxynitride, titanium oxynitride or molybdenum oxynitride coated substrate for use as an electrical energy storage component in a capacitor or a battery conf
The present invention concerns a process to produce a high surface area niobium oxynitride, tantalum oxynitride, vanadium oxynitride, zirconium oxynitride, titanium oxynitride or molybdenum oxynitride coated substrate for use as an electrical energy storage component in a capacitor or a battery configuration. The process relates to:
대표청구항▼
[ We claim:] [1.] A process to produce a high surface area niobium oxynitride, tantalum oxynitride, vanadium oxynitride, zirconium oxynitride, titanium oxynitride or molybdenum oxynitride coated substrate which oxynitride is electrically conducting, which process comprises:(a) coating one or both fl
[ We claim:] [1.] A process to produce a high surface area niobium oxynitride, tantalum oxynitride, vanadium oxynitride, zirconium oxynitride, titanium oxynitride or molybdenum oxynitride coated substrate which oxynitride is electrically conducting, which process comprises:(a) coating one or both flat etched surfaces of a solid substrate, which substrate is in the form of a thin sheet, with a solution or a slurry of a metal halide selected from the group consisting of niobium halide, tantalum halide, vanadium halide, zirconium halide, titanium halide, molybdenum halide, and combinations thereof and a liquid volatile carrier to produce a thin surface film;(b) contacting the metal halide surface film-carrier coated substrate of step (a) with oxygen, air, or combinations thereof at a temperature of between about 150 and 250.degree. C. for between about 5 and 60 minutes to convert the metal halide present to metal oxide, as a thin film and to remove the liquid volatile carrier;(c) repeating steps (a) and (b) to obtain an accumulated thickness of metal oxide coating on the substrate, which accumulated metal oxide coating has a high surface area and the liquid volatile carrier is then removed;(d) heating the metal oxide film coated substrate of step (c) in an environment selected from the group consisting of oxygen, air and combinations thereof at between about 160 and 240.degree. C. for between about 1 and 3 hours to convert at least about 95% of any residual metal halide from steps (b), (c) and (d) to metal oxide;(e) increasing the temperature of the metal oxide coated substrate at a rate of less than about 40.degree. C. per minute in a nitrogen atmosphere to between about 500 to 800.degree. C.;(f) contacting the oxide coated substrate produced in step (e) with a nitrogen source selected from the group consisting of excess flowing gaseous ammonia, an excess flowing mixture of ammonia gas and hydrogen gas, and an excess flowing mixture of hydrogen gas and nitrogen gas at between about 500 and 800.degree. C. for between 1 and 6 hours which treatment converts about 95% or greater of the metal oxide coating to an oxynitride coating of niobium oxynitride, tantalum oxynitride, vanadium oxynitride, zirconium oxynitride, titanium oxynitride, molybdenum oxynitride layer, and combinations thereof on the substrate, which metal oxynitride layer has a high surface area of between about 10 and 60 m.sup.2 /g and is electrically conductive; and(g) cooling to ambient temperature and recovering the high surface area metal oxynitride coated substrate produced in step (f).
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