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Apparatus and method for pulsed plasma processing of a semiconductor substrate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0727209 (1996-10-08)
발명자 / 주소
  • Savas Stephen E.
출원인 / 주소
  • Mattson Technology, Inc.
대리인 / 주소
    Wilson Sonsini Goodrich & Rosati
인용정보 피인용 횟수 : 53  인용 특허 : 71

초록 ▼

Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple sufficient power into the plasma to produce a high density of ions (>10.sup.11 cm.sup.-3) for etching. Pr

대표청구항 ▼

[ What is claimed is:] [1.] A plasma reactor for etching a semiconductor substrate comprising:a reactor chamber for producing a plasma;an induction coil adjacent to at least a portion of the reactor chamber;a first power source coupled to the induction coil such that the induction coil couples power

이 특허에 인용된 특허 (71)

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이 특허를 인용한 특허 (53)

  1. Savas Stephen E., Apparatus and method for pulsed plasma processing of a semiconductor substrate.
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  2. Stephen E. Savas, Apparatus and method for pulsed plasma processing of a semiconductor substrate.
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  3. Hatakeyama, Masahiro; Ichiki, Katsunori; Watanabe, Kenji; Satake, Tohru, Beam source.
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  4. Lau, Wesley George, Cleaning process residues from substrate processing chamber components.
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  5. Kamarehi,Mohammad, Helix coupled remote plasma source.
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  6. Gilbert, James A., Inductively-coupled plasma device.
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  7. Gilbert, James A., Inductively-coupled plasma device.
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  8. Kanakasabapathy, Sivananda K.; Overzet, Lawrence J., Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges.
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  9. Brouk, Victor; Heckman, Randy, Method and apparatus for controlling ion energy distribution.
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  10. Martin, Kevin P.; Gillis, Harry P.; Choutov, Dmitri A., Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment.
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  11. Martin,Kevin P.; Gillis,Harry P.; Choutov,Dmitri A., Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment.
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  12. Walton,Scott G.; Meger,Robert; Fernsler,Richard; Leonhardt,Darrin, Method and apparatus for producing an ion-ion plasma continuous in time.
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  13. Moroz,Paul, Method and apparatus for reducing substrate charging damage.
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  14. Ono, Tetsuo; Mizutani, Tatsumi; Hamasaki, Ryouji; Kure, Tokuo; Tokunaga, Takafumi; Kojima, Masayuki, Method and apparatus for treating surface of semiconductor.
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  15. Laermer, Franz; Schilp, Andrea, Method for anisotropic plasma etching of semiconductors.
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  16. Brouk, Victor; Heckman, Randy; Hoffman, Daniel J., Method for controlling ion energy distribution.
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  17. Kazuya Nagaseki JP; Hiroki Yamazaki, Method for controlling plasma processor.
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  18. Ono, Tetsuo; Tokunaga, Takafumi; Umezawa, Tadashi; Yoshigai, Motohiko; Mizutani, Tatsumi; Kure, Tokuo; Kojima, Masayuki; Sato, Takashi; Goto, Yasushi, Method for processing surface of sample.
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  19. Laermer, Franz; Schilp, Andrea, Method of anisotropic etching of silicon.
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  20. Brouk, Victor; Hoffman, Daniel J.; Carter, Daniel, Method of controlling the switched mode ion energy distribution system.
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  21. Brouk, Victor; Hoffman, Daniel J.; Carter, Daniel, Method of controlling the switched mode ion energy distribution system.
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  25. Rueger, Neal R., Methods and apparatuses for energetic neutral flux generation for processing a substrate.
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  36. Gottscho, Richard A.; Steger, Robert J., Switched uniformity control.
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  37. Gottscho,Richard A.; Steger,Robert J., Switched uniformity control.
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  38. Brouk, Victor; Heckman, Randy; Hoffman, Daniel J., System, method and apparatus for controlling ion energy distribution.
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  39. Hoffman, Daniel J.; Brouk, Victor; Carter, Daniel, System, method and apparatus for controlling ion energy distribution of a projected plasma.
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  40. Hoffman, Daniel J.; Carter, Daniel; Brouk, Victor; Hattel, William J., Systems and methods for calibrating a switched mode ion energy distribution system.
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  41. Carter, Daniel; Brouk, Victor; Hoffman, Daniel J., Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system.
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  42. Laizhong Luo ; Ying Holden ; Rene George ; Robert Guerra ; Allan Wiesnoski ; Nicole Kuhl ; Craig Ranft ; Sai Mantripragada, Systems and methods for two-sided etch of a semiconductor substrate.
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  48. Marwan H. Khater ; Lawrence J. Overzet, Transmission line based inductively coupled plasma source with stable impedance.
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  50. Wilson, Aaron R., Using positive DC offset of bias RF to neutralize charge build-up of etch features.
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  51. Wilson, Aaron R., Using positive DC offset of bias RF to neutralize charge build-up of etch features.
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  52. Brouk, Victor; Hoffman, Daniel J., Wafer chucking system for advanced plasma ion energy processing systems.
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  53. Brouk, Victor; Hoffman, Daniel J.; Carter, Daniel; Kovalevskii, Dmitri, Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel.
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