초록 ▼

The present invention provides a bond pad support structure for use in an integrated circuit having a bond pad located thereon. In one embodiment, the bond pad support structure comprises a support layer that is located below the bond pad and that has an opening formed therein. The bond pad support

The present invention provides a bond pad support structure for use in an integrated circuit having a bond pad located thereon. In one embodiment, the bond pad support structure comprises a support layer that is located below the bond pad and that has an opening formed therein. The bond pad support structure further includes a dielectric layer that is located on the conductive layer and that extends at least partially into the opening to form a bond pad support surface over at least a portion of the opening. The first bond pad support layer, in one embodiment, may comprise a conductive metal and the second bond pad support layer may comprise of a dielectric material. The present invention provides a unique bond pad structure wherein an opening within a first bond pad support layer is at least partially filled with a second bond pad support layer. It is believed that the inter-structural cooperation between these two layers provides a graded composite support structure that acts as a differential force transducer to buffer internal and bonding stresses within an integrated circuit.

대표청구항 ▼

[ What is claimed is:] [1.] For use in an integrated circuit having a bond pad located thereon, a bond pad support structure, comprising:a conductive metal first bond pad support layer located below said bond pad and having a plurality of openings formed therein, each of said plurality of openings f

[ What is claimed is:] [1.] For use in an integrated circuit having a bond pad located thereon, a bond pad support structure, comprising:a conductive metal first bond pad support layer located below said bond pad and having a plurality of openings formed therein, each of said plurality of openings forming a geometric pattern in said conductive metal first bond pad support layer; anda second bond pad support layer comprised of a nonconductive material and located on said first bond pad support layer and, said second bond pad support layer extending at least partially into said opening to form a bond pad support surface over at least a portion of said opening.