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Process-gas supply apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
출원번호 US-0069987 (1998-04-30)
우선권정보 JP-0130261 (1997-05-02)
발명자 / 주소
  • Hatano Tatsuo,JPX
출원인 / 주소
  • Tokyo Electron Limited, JPX
대리인 / 주소
    Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보 피인용 횟수 : 46  인용 특허 : 6

초록

A process-gas supply apparatus for supplying a process gas to a process chamber in which a predetermined processing using the process gas is applied to the object set therein, which comprising a process-gas source for supplying a process gas, a carrier gas source filled with a carrier gas, at least

대표청구항

[ I claim:] [1.] A process-gas supply apparatus for supplying a process gas to a process chamber in which a predetermined processing using the process gas is applied to the object set therein, which comprising:a process-gas source for generating a process gas;a carrier gas source filled with a carri

이 특허에 인용된 특허 (6)

  1. Fan Chiko (810 El Quanito Dr. Danville CA 94526) Pearson Anthony (498 Los Pinos Way San Jose CA 95123) Chen J. James (2304 Maximilian Dr. Campbell CA 95008) White ; Jr. James L. (392 Eagle Trace Half, Apparatus for fluid delivery in chemical vapor deposition systems.
  2. Ohmi Tadahiro,JPX, Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films.
  3. Homma Kenji,JPX ; Yomiya Koichi,JPX, Processing furnace for oxidizing objects.
  4. Takahashi Hironari (Itami JPX), Semiconductor device manufacturing apparatus and cleaning method for the apparatus.
  5. Jinnouchi Shimpei (Nirasaki JPX) Kuno Hiroshi (Komae JPX) Otsuki Hiroshi (Tokyo JPX), Semiconductor treatment apparatus.
  6. Lee Hideki,JPX, Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus.

이 특허를 인용한 특허 (46)

  1. Kobrin, Boris; Nowak, Romuald; Yi, Richard C.; Chinn, Jeffrey D., Apparatus and method for controlled application of reactive vapors to produce thin films and coatings.
  2. McCullough, Kenneth J.; Moreau, Wayne M.; Simons, John P.; Taft, Charles J.; Cotte, John M., Apparatus and method for increasing throughput in fluid processing.
  3. Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
  4. Chen, Ling; Ku, Vincent W.; Chang, Mei; Wu, Dien Yeh; Chung, Hua, Apparatus for hybrid chemical processing.
  5. Kobrin, Boris; Chin, Jeffrey D.; Janeiro, Benigno A.; Nowak, Romuald, Articles with super-hydrophobic and-or super-hydrophilic surfaces and method of formation.
  6. Chung, Hua; Wang, Rongjun; Maity, Nirmalya, Atomic layer deposition of barrier materials.
  7. Tachibana, Hiroyuki; Murata, Kazutoshi; Hattori, Nozomu, Atomic layer growing apparatus.
  8. Nguyen, Son T.; Sangam, Kedarnath; Schwartz, Miriam; Choi, Kenric; Bhat, Sanjay; Narwankar, Pravin K.; Kher, Shreyas; Sharangapani, Rahul; Muthukrishnan, Shankar; Deaton, Paul, Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system.
  9. Kobrin, Boris; Nowak, Romuald; Yi, Richard C.; Chinn, Jeffrey D., Controlled deposition of silicon-containing coatings adhered by an oxide layer.
  10. Kobrin, Boris; Chinn, Jeffrey D.; Nowak, Romuald; Yi, Richard C., Controlled vapor deposition of multilayered coatings adhered by an oxide layer.
  11. Kobrin, Boris; Chinn, Jeffrey D.; Nowak, Romuald; Yi, Richard C., Controlled vapor deposition of multilayered coatings adhered by an oxide layer.
  12. Chung, Hua; Chen, Ling; Chin, Barry L., Cyclical deposition of refractory metal silicon nitride.
  13. Khandelwal, Amit; Gelatos, Avgerinos V.; Marcadal, Christophe; Chang, Mei, Deposition and densification process for titanium nitride barrier layers.
  14. Khandelwal, Amit; Gelatos, Avgerinos V.; Marcadal, Christophe; Chang, Mei, Deposition and densification process for titanium nitride barrier layers.
  15. Yoon, Ki Hwan; Cha, Yonghwa Chris; Yu, Sang Ho; Ahmad, Hafiz Farooq; Wee, Ho Sun, Deposition methods for barrier and tungsten materials.
  16. Derderian,Garo J.; Morrison,Gordon, Deposition system to provide preheating of chemical vapor deposition precursors.
  17. Sandhu, Gurtej S.; Sharan, Sujit, Device for in-situ cleaning of an inductively-coupled plasma chambers.
  18. Kim,Jun young; Choi,Byoung lyong; Lee,Eun kyung, Diffusion system.
  19. Kobrin, Boris; Nowak, Romuald; Chinn, Jeffrey D., Durable conformal wear-resistant carbon-doped metal oxide-comprising coating.
  20. Botelho Alexandre de Almeida ; Del Prato Thomas Anthony ; Ford Robert William, Dynamic blending gas delivery system and method.
  21. de Almeida Botelho, Alexandre; Del Prato, Thomas Anthony; Ford, Robert William, Dynamic blending gas delivery system and method.
  22. Hasebe, Kazuhide; Okada, Mitsuhiro; Kim, Chaeho; Lee, Byounghoon; Chou, Pao-Hwa, Film formation method and apparatus for semiconductor process.
  23. Hara, Masamichi, Film forming apparatus and film forming method.
  24. Lai, Ken K.; Byun, Jeong Soo; Wu, Frederick C.; Srinivas, Ramanujapuran A.; Gelatos, Avgerinos; Chang, Mei; Kori, Moris; Sinha, Ashok K.; Chung, Hua; Fang, Hongbin; Mak, Alfred W.; Yang, Michael X.; Xi, Ming, Formation of composite tungsten films.
  25. Kasai, Shigeru; Tanaka, Sum; Saito, Tetsuya; Yamamoto, Norihiko; Yanagitani, Kenichi, Gas supply method using a gas supply system.
  26. Larson, Dean J., Gas switching section including valves having different flow coefficients for gas distribution system.
  27. Larson, Dean J., Gas switching section including valves having different flow coefficients for gas distribution system.
  28. Larson, Dean J., Gas switching section including valves having different flow coefficients for gas distribution system.
  29. Kobrin, Boris; Chinn, Jeffrey D.; Nowak, Romuald; Yi, Richard C., High aspect ratio performance coatings for biological microfluidics.
  30. Ma, Paul F.; Aubuchon, Joseph F.; Chang, Mei; Kim, Steven H.; Wu, Dien-Yeh; Nakashima, Norman M.; Johnson, Mark; Palakodeti, Roja, In-situ chamber treatment and deposition process.
  31. Tzu, Gwo-Chuan; Umotoy, Salvador P., Lid assembly for a processing system to facilitate sequential deposition techniques.
  32. Kobayashi,Yasuo, Method and apparatus for surface treatment.
  33. Kobayashi,Yasuo, Method and apparatus for surface treatment.
  34. Kobrin,Boris; Nowak,Romuald; Yi,Richard C.; Chinn,Jeffrey D., Method for controlled application of reactive vapors to produce thin films and coatings.
  35. Ma, Paul; Aubuchon, Joseph F.; Lu, Jiang; Chang, Mei, Method for tuning a deposition rate during an atomic layer deposition process.
  36. Myo, Nyi Oo; Cho, Kenric; Kher, Shreyas; Narwankar, Pravin; Poppe, Steve; Metzner, Craig R.; Deaten, Paul, Methods for atomic layer deposition of hafnium-containing high-K dielectric materials.
  37. Lai, Ken Kaung; Rajagopalan, Ravi; Khandelwal, Amit; Moorthy, Madhu; Gandikota, Srinivas; Castro, Joseph; Gelatos, Avgerinos V.; Knepfler, Cheryl; Jian, Ping; Fang, Hongbin; Huang, Chao-Ming; Xi, Ming; Yang, Michael X.; Chung, Hua; Byun, Jeong Soo, Methods for depositing tungsten layers employing atomic layer deposition techniques.
  38. Derderian,Garo J.; Morrison,Gordon, Preheating of chemical vapor deposition precursors.
  39. Lu, Xinliang; Jian, Ping; Yoo, Jong Hyun; Lai, Ken Kaung; Mak, Alfred W.; Jackson, Robert L.; Xi, Ming, Pulsed deposition process for tungsten nucleation.
  40. Cao, Wei; Chung, Hua; Ku, Vincent W.; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  41. Cao, Wei; Chung, Hua; Ku, Vincent; Chen, Ling, Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor.
  42. Xi, Ming; Yang, Michael; Zhang, Hui, System and method for forming an integrated barrier layer.
  43. Gelatos, Avgerinos V.; Lee, Sang-Hyeob; Yuan, Xiaoxiong; Umotoy, Salvador P.; Chang, Yu; Tzu, Gwo-Chuan; Renuart, Emily; Lin, Jing; Lai, Wing-Cheong; Le, Sang Q., Temperature controlled lid assembly for tungsten nitride deposition.
  44. Wang, Shulin; Kroemer, Ulrich; Luo, Lee; Chen, Aihua; Li, Ming, Tungsten nitride atomic layer deposition processes.
  45. Larson, Dean J.; Kadkhodayan, Babak; Wu, Di; Takeshita, Kenji; Yen, Bi-Ming; Su, Xingcai; Denty, Jr., William M.; Loewenhardt, Peter, Uniform etch system.
  46. Lee, Sang-Hyeob; Gelatos, Avgerinos V.; Wu, Kai; Khandelwal, Amit; Marshall, Ross; Renuart, Emily; Lai, Wing-Cheong Gilbert; Lin, Jing, Vapor deposition of tungsten materials.
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