초록 ▼

A semiconductor integrated circuit device is provided in which an interlayer insulation film deposited on a semiconductor chip includes a boron-containing silicon oxide film and a second film deposited on the boron-containing silicon oxide film. A guard ring is disposed adjacent to the periphery of

A semiconductor integrated circuit device is provided in which an interlayer insulation film deposited on a semiconductor chip includes a boron-containing silicon oxide film and a second film deposited on the boron-containing silicon oxide film. A guard ring is disposed adjacent to the periphery of the semiconductor chip, and a slit is disposed between the guard ring and the periphery of the chip. The depth of the slit is selected such that cracks formed on the boundary between the BPSG film and the second film are inhibited by the slit from intruding further along the boundary to the inside of the chip, thereby preventing moisture or obstacles from reaching the inside of the chip through the cracks.

대표청구항 ▼

[ What is claimed is:] [6.] A semiconductor integrated circuit device comprising:a semiconductor substrate having a first region which is a peripheral portion of a main surface and a second region inside of the first region in said main surface,a plurality of MISFETs each formed in the second region

[ What is claimed is:] [6.] A semiconductor integrated circuit device comprising:a semiconductor substrate having a first region which is a peripheral portion of a main surface and a second region inside of the first region in said main surface,a plurality of MISFETs each formed in the second region and each having a source region, a drain region and a gate electrode,a boron containing silicon oxide film formed in the first region and the second region, and having a first connection region formed on the main surface of the semiconductor substrate and a second connection opening in the second region for exposing the source region or the drain region of at least one of the plurality of MISFETs,a first conductor layer formed in the first region, in the first connection opening and on the boron-containing silicon oxide film,a second conductor layer formed in the second connection opening and on the boron-containing silicon oxide film in the second region, anda silicon oxide film not containing boron formed above the first and the second conductor layers, wherein at least a portion of the silicon oxide film not containing boron is in contact with the boron-containing silicon oxide film,wherein the first conductor layer is disposed continuously along the periphery of the main surface, and a groove penetrating a boundary between the boron-containing silicon oxide film and the silicon oxide film not containing boron is formed between the first conductor layer in the first region and the periphery of the main surface, wherein the concentration of boron in the boron-containing silicon oxide film is about 13 mol %.